Hafnium-based high-k gate dielectrics AP Huang, ZC Yang, PK Chu
Advances in solid state circuits technologies, 333-350, 2010
105 2010 Graded AlGaN channel transistors for improved current and power gain linearity S Bajaj, Z Yang, F Akyol, PS Park, Y Zhang, AL Price, S Krishnamoorthy, ...
IEEE Transactions on Electron Devices 64 (8), 3114-3119, 2017
81 2017 Unipolar vertical transport in GaN/AlGaN/GaN heterostructures DN Nath, ZC Yang, CY Lee, PS Park, YR Wu, S Rajan
Applied Physics Letters 103 (2), 022102, 2013
66 2013 Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion P Sung Park, KM Reddy, DN Nath, Z Yang, NP Padture, S Rajan
Applied Physics Letters 102 (15), 2013
36 2013 Role of interface dipole in metal gate/high-k effective work function modulation by aluminum incorporation ZC Yang, AP Huang, L Yan, ZS Xiao, XW Zhang, PK Chu, WW Wang
Applied Physics Letters 94 (25), 2009
27 2009 Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin-SiO2/Si p-channel metal-oxide-semiconductor stacks XH Zheng, AP Huang, ZS Xiao, ZC Yang, M Wang, XW Zhang, WW Wang, ...
Applied Physics Letters 97 (13), 2010
16 2010 Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier Z Yang, Y Zhang, DN Nath, JB Khurgin, S Rajan
Applied Physics Letters 106 (3), 032101, 2015
14 2015 Flat-band voltage shift in metal-gate/high-k/Si stacks AP Huang, XH Zheng, ZS Xiao, ZC Yang, M Wang, KC Paul, XD Yang
Chinese Physics B 20 (9), 097303, 2011
13 2011 Fermi-Level Pinning at Metal/High- Interface Influenced by Electron State Density of Metal Gate ZC Yang, AP Huang, XH Zheng, ZS Xiao, XY Liu, XW Zhang, PK Chu, ...
IEEE electron device letters 31 (10), 1101-1103, 2010
11 2010 Current gain above 10 in sub-10 nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter Z Yang, Y Zhang, S Krishnamoorthy, DN Nath, JB Khurgin, S Rajan
Appl. Phys. Lett. 108 (19), 192101, 2016
10 2016 Recovery of vanadium and nickel from spent-residue oil hydrotreating catalyst by direct acid leaching-solvent extraction Q Teng, ZC Yang, HJ Wang
Trans. Nonferrous Met. Soc. China 33 (325), 336, 2023
7 2023 a.; Idrobo, J.-C.; et al MR Laskar, DN Nath, L Ma, EW Lee, CH Lee, T Kent, Z Yang, R Mishra, ...
Appl. Phys. Lett 104 (9), 092104, 2014
5 2014 N-polar III-Nitride Tunneling Hot Electron Transfer Amplifier Z Yang, DN Nath, Y Zhang, S Rajan
Device Research Conference (DRC), 2014 72nd Annual, 173-174, 2014
4 2014 Small-signal characteristics of graded AlGaN channel PolFETs S Bajaj, Z Yang, F Akyol, PS Park, Y Zhang, SH Sohel, S Krishnamoorthy, ...
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
3 2017 III-Nitride Tunneling Hot Electron Transfer Amplifier (THETA) Z Yang, DN Nath, Y Zhang, S Krishnamoorthy, J Khurgin, S Rajan
High-Frequency GaN Electronic Devices, 109-157, 2020
1 2020 Common Emitter Current and Voltage Gain in III-Nitride Tunneling Hot Electron Transistors Z Yang, DN Nath, Y Zhang, JB Khurgin, S Rajan
IEEE Electron Device Letters 36 (5), 436, 2015
1 2015 Negative differential resistance in GaN tunneling hot electron transistors Z Yang, D Nath, S Rajan
Applied Physics Letters 105 (20), 2014
1 2014 III-Nitride Hot Electron Transistors for High Speed Electronics Z Yang
The Ohio State University, 2020
2020 Modification of a scanning electron microscope (SEM) for insitu, nanometer size contact, electrical measurements of III-nitride transistors C Selcu, Z Yang, S Krishnamoorthy, S Rajan
APS March Meeting Abstracts 2016, L7. 004, 2016
2016 Modeling and experimental demonstration of sub-10 nm base III-nitride tunneling hot electron transistors Z Yang, Y Zhang, S Krishnamoorthy, DN Nath, JB Khurgin, S Rajan
2015 73rd Annual Device Research Conference (DRC), 53-54, 2015
2015