| Influence of the SET current on the resistive switching properties of tantalum oxide created by oxygen implantation SM Bishop, H Bakhru, JO Capulong, NC Cady Applied Physics Letters 100 (14), 2012 | 16 | 2012 |
| Effect of crystallinity on endurance and switching behavior of HfOx-based resistive memory devices JO Capulong, BD Briggs, SM Bishop, MQ Hovish, RJ Matyi, NC Cady 2012 IEEE International Integrated Reliability Workshop Final Report, 22-25, 2012 | 10 | 2012 |
| Reliability of fully-integrated nanoscale ReRAM/CMOS combinations as a function of on-wafer current control K Beckmann, J Holt, J Capulong, S Lombardo, NC Cady, J Van Nostrand 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW …, 2014 | 7 | 2014 |
| Ion implantation synthesis and conduction of tantalum oxide resistive memory layers SM Bishop, BD Briggs, PZ Rice, JO Capulong, H Bakhru, NC Cady Journal of Vacuum Science & Technology B 31 (1), 2013 | 5 | 2013 |
| Comparison of HfOx-based resistive memory devices with crystalline and amorphous active layers BD Briggs, SM Bishop, JO Capulong, MQ Hovish, RJ Matyi, NC Cady 2011 International Semiconductor Device Research Symposium (ISDRS), 1-2, 2011 | 5 | 2011 |
| Impact of argon-ambient annealing in hafnium oxide resistive random access memory JO Capulong, BD Briggs, NC Cady 72nd Device Research Conference, 113-114, 2014 | 1 | 2014 |
| Oxide Defect Engineering Methods for Valence Change (VCM) Resistive Random Access Memories JO Capulong State University of New York at Albany, 2014 | | 2014 |
