| Comphy—A compact-physics framework for unified modeling of BTI G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ... Microelectronics Reliability 85, 49-65, 2018 | 164 | 2018 |
| Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory K Florent, M Pesic, A Subirats, K Banerjee, S Lavizzari, A Arreghini, ... 2018 IEEE International Electron Devices Meeting (IEDM), 2.5. 1-2.5. 4, 2018 | 128 | 2018 |
| Investigation of the endurance of FE-HfO2 devices by means of TDDB studies K Florent, A Subirats, S Lavizzari, R Degraeve, U Celano, B Kaczer, ... 2018 IEEE International Reliability Physics Symposium (IRPS), 6D. 3-1-6D. 3-7, 2018 | 33 | 2018 |
| Efficient physical defect model applied to PBTI in high-κ stacks G Rzepa, J Franco, A Subirats, M Jech, A Chasin, A Grill, M Waltl, ... 2017 IEEE International Reliability Physics Symposium (IRPS), XT-11.1-XT-11.6, 2017 | 33 | 2017 |
| Impact of single charge trapping on the variability of ultrascaled planar and trigate FDSOI MOSFETs: Experiment versus simulation A Subirats, X Garros, J El Husseini, C Le Royer, G Reimbold, G Ghibaudo IEEE transactions on electron devices 60 (8), 2604-2610, 2013 | 27 | 2013 |
| Vertical ferroelectric HfO K Florent, M Pesic, A Subirats, K Banerjee, S Lavizzari, A Arreghini IEDM Tech. Dig 2, 1-2.5, 2017 | 25 | 2017 |
| Si/SiGe superlattice I/O FinFETs in a vertically-stacked gate-all-around horizontal nanowire technology G Hellings, H Mertens, A Subirats, E Simoen, T Schram, LA Ragnarsson, ... 2018 IEEE Symposium on VLSI Technology, 85-86, 2018 | 22 | 2018 |
| Gate stack thermal stability and PBTI reliability challenges for 3D sequential integration: Demonstration of a suitable gate stack for top and bottom tier nMOS J Franco, L Witters, A Vandooren, H Arimura, S Sioncke, V Putcha, A Vais, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 2B-3.1-2B-3.5, 2017 | 22 | 2017 |
| Performance and electrostatic improvement by high-pressure anneal on Si-passivated strained Ge pFinFET and gate all around devices with superior NBTI reliability H Arimura, L Witters, D Cott, H Dekkers, R Loo, J Mitard, LÅ Ragnarsson, ... 2017 Symposium on VLSI Technology, T196-T197, 2017 | 21 | 2017 |
| A new gate pattern measurement for evaluating the BTI degradation in circuit conditions A Subirats, X Garros, J Cluzel, J El Husseini, F Cacho, X Federspiel, ... 2014 IEEE International Reliability Physics Symposium, 5D. 1.1-5D. 1.5, 2014 | 21 | 2014 |
| New Insights into the Imprint Effect in FE-HfO2 and its Recovery Y Higashi, K Florent, A Subirats, B Kaczer, L Di Piazza, S Clima, N Ronchi, ... 2019 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2019 | 20 | 2019 |
| Modeling the dynamic variability induced by charged traps in a bilayer gate oxide A Subirats, X Garros, J El Husseini, E Vincent, G Reimbold, G Ghibaudo IEEE Transactions on Electron Devices 62 (2), 485-492, 2014 | 18 | 2014 |
| Impact of dynamic variability on SRAM functionality and performance in nano-scaled CMOS technologies A Subirats, X Garros, J Mazurier, J El Husseini, O Rozeau, G Reimbold, ... 2013 IEEE International Reliability Physics Symposium (IRPS), 4A. 6.1-4A. 6.5, 2013 | 18 | 2013 |
| Impact of backside interface on hot carriers degradation of thin film FDSOI Nmosfets L Brunet, X Garros, A Bravaix, A Subirats, F Andrieu, O Weber, ... 2012 IEEE International Reliability Physics Symposium (IRPS), 3B. 2.1-3B. 2.5, 2012 | 18 | 2012 |
| Experimental and theoretical verification of channel conductivity degradation due to grain boundaries and defects in 3D NAND A Subirats, A Arreghini, E Capogreco, R Delhougne, CL Tan, A Hikavyy, ... 2017 IEEE International Electron Devices Meeting (IEDM), 21.2. 1-21.2. 4, 2017 | 16 | 2017 |
| MOVPE In1− xGaxAs high mobility channel for 3-D NAND memory E Capogreco, JG Lisoni, A Arreghini, A Subirats, B Kunert, W Guo, ... 2015 IEEE International Electron Devices Meeting (IEDM), 3.1. 1-3.1. 4, 2015 | 15 | 2015 |
| A complete characterization and modeling of the BTI-induced dynamic variability of SRAM arrays in 28-nm FD-SOI technology J El Husseini, X Garros, J Cluzel, A Subirats, A Makosiej, O Weber, ... IEEE Transactions on Electron Devices 61 (12), 3991-3999, 2014 | 15 | 2014 |
| Hot-carrier analysis on nMOS Si FinFETs with solid source doped junction A Chasin, J Franco, R Ritzenthaler, G Hellings, M Cho, Y Sasaki, ... 2016 IEEE International Reliability Physics Symposium (IRPS), 4B-4-1-4B-4-6, 2016 | 14 | 2016 |
| Feasibility of InxGa1–xAs High Mobility Channel for 3-D NAND Memory E Capogreco, A Subirats, JG Lisoni, A Arreghini, B Kunert, W Guo, CL Tan, ... IEEE Transactions on Electron Devices 64 (1), 130-136, 2016 | 13 | 2016 |
| Defect-centric perspective of combined BTI and RTN time-dependent variability P Weckx, B Kaczer, J Franco, PJ Roussel, E Bury, A Subirats, ... 2015 IEEE International Integrated Reliability Workshop (IIRW), 21-28, 2015 | 13 | 2015 |
