A.N.Nazarov
A.N.Nazarov
Institute of Semiconductor Physics NASU
E-mail confirmado em lab15.kiev.ua
Título
Citado por
Citado por
Ano
Reduced electric field in junctionless transistors
JP Colinge, CW Lee, I Ferain, ND Akhavan, R Yan, P Razavi, R Yu, ...
Applied Physics Letters 96 (7), 073510, 2010
2842010
Low subthreshold slope in junctionless multigate transistors
CW Lee, AN Nazarov, I Ferain, ND Akhavan, R Yan, P Razavi, R Yu, ...
Applied Physics Letters 96 (10), 102106, 2010
2342010
Semiconductor-on-insulator materials for nanoelectronics applications
A Nazarov, JP Colinge, F Balestra, JP Raskin, F Gamiz, VS Lysenko
Springer, 2011
1042011
Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals
A Nazarov, JM Sun, W Skorupa, RA Yankov, IN Osiyuk, IP Tjagulskii, ...
Applied Physics Letters 86 (15), 151914, 2005
732005
Solid-State Electron
LW Wu, SJ Chang, YK Su, RW Chuang, YP Hsu, CH Kuo, WC Lai, ...
Solid State Electron, 1970
601970
Improvments in railway communication via GSM-R
K Kastell, S Bug, A Nazarov, R Jakoby
2006 IEEE 63rd Vehicular Technology Conference 6, 3026-3030, 2006
532006
Color control of white photoluminescence from carbon-incorporated silicon oxide
Y Ishikawa, AV Vasin, J Salonen, S Muto, VS Lysenko, AN Nazarov, ...
Journal of Applied Physics 104 (8), 083522, 2008
482008
On the mechanism of electroluminescence excitation in Er-doped SiO2 containing silicon nanoclusters
JM Sun, W Skorupa, T Dekorsy, M Helm, AN Nazarov
Optical Materials 27 (5), 1050-1054, 2005
472005
Trapping of negative and positive charges in ion implanted silicon dioxide layers subjected to high-field electron injection
AN Nazarov, T Gebel, L Rebohle, W Skorupa, IN Osiyuk, VS Lysenko
Journal of applied physics 94 (7), 4440-4448, 2003
442003
On the MOSFET threshold voltage extraction by transconductance and transconductance-to-current ratio change methods: Part I—Effect of gate-voltage-dependent mobility
T Rudenko, V Kilchytska, MKM Arshad, JP Raskin, A Nazarov, D Flandre
IEEE Transactions on Electron Devices 58 (12), 4172-4179, 2011
432011
Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors
T Rudenko, A Nazarov, I Ferain, S Das, R Yu, S Barraud, P Razavi
Applied Physics Letters 101 (21), 213502, 2012
422012
Blue and red electroluminescence of Europium-implanted metal-oxide-semiconductor structures as a probe for the dynamics of microstructure
L Rebohle, J Lehmann, S Prucnal, A Kanjilal, A Nazarov, I Tyagulskii, ...
Applied Physics Letters 93 (7), 071908, 2008
422008
On the MOSFET threshold voltage extraction by transconductance and transconductance-to-current ratio change methods: Part II—Effect of drain voltage
T Rudenko, V Kilchytska, MKM Arshad, JP Raskin, A Nazarov, D Flandre
IEEE Transactions on Electron Devices 58 (12), 4180-4188, 2011
412011
Random telegraph-signal noise in junctionless transistors
AN Nazarov, I Ferain, ND Akhavan, P Razavi, R Yu, JP Colinge
Applied Physics Letters 98 (9), 092111, 2011
402011
Carrier mobility in undoped triple-gate FinFET structures and limitations of its description in terms of top and sidewall channel mobilities
T Rudenko, V Kilchytska, N Collaert, M Jurczak, A Nazarov, D Flandre
IEEE transactions on electron devices 55 (12), 3532-3541, 2008
392008
Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxides
T Rudenko, V Kilchytska, S Burignat, JP Raskin, F Andrieu, O Faynot, ...
Solid-State Electronics 54 (2), 164-170, 2010
372010
Low-temperature reduction of graphene oxide: electrical conductance and scanning kelvin probe force microscopy
OM Slobodian, PM Lytvyn, AS Nikolenko, VM Naseka, OY Khyzhun, ...
Nanoscale research letters 13 (1), 139, 2018
352018
Electron mobility in heavily doped junctionless nanowire SOI MOSFETs
T Rudenko, A Nazarov, R Yu, S Barraud, K Cherkaoui, P Razavi, G Fagas
Microelectronic Engineering 109, 326-329, 2013
342013
Kinetics of structural and phase transformations in thin SiOx films in the course of a rapid thermal annealing
VA Dan’ko, IZ Indutnyi, VS Lysenko, IY Maidanchuk, VI Min’ko, ...
Semiconductors 39 (10), 1197-1203, 2005
342005
The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices
AN Nazarov, SI Tiagulskyi, IP Tyagulskyy, VS Lysenko, L Rebohle, ...
Journal of Applied Physics 107 (12), 123112, 2010
332010
O sistema não pode executar a operação agora. Tente novamente mais tarde.
Artigos 1–20