Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN AM Fischer, Z Wu, K Sun, Q Wei, Y Huang, R Senda, D Iida, M Iwaya, ...
Applied Physics Express 2 (4), 041002, 2009
84 2009 Analysis of optical gain property in the InGaN/GaN triangular shaped quantum well under the piezoelectric field Z Yang, R Li, Q Wei, T Yu, Y Zhang, W Chen, X Hu
Applied Physics Letters 94 (6), 061120, 2009
71 2009 Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells T Li, AM Fischer, QY Wei, FA Ponce, T Detchprohm, C Wetzel
Applied Physics Letters 96 (3), 031906, 2010
69 2010 Compositional instability in InAlN/GaN lattice-matched epitaxy QY Wei, T Li, Y Huang, JY Huang, ZT Chen, T Egawa, FA Ponce
Applied Physics Letters 100 (9), 092101, 2012
43 2012 The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells T Li, QY Wei, AM Fischer, JY Huang, YU Huang, FA Ponce, JP Liu, ...
Applied Physics Letters 102 (4), 041115, 2013
29 2013 In‐plane polarization of GaN‐based heterostructures with arbitrary crystal orientation QY Wei, T Li, ZH Wu, FA Ponce
physica status solidi (a) 207 (10), 2226-2232, 2010
24 2010 Evidence of Two-Dimensional Hole Gas in p-Type AlGaN/AlN/GaN Heterostructures Q Wei, Z Wu, K Sun, FA Ponce, J Hertkorn, F Scholz
Applied Physics Express 2 (12), 121001, 2009
22 2009 Highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy J Hertkorn, SB Thapa, T Wunderer, F Scholz, ZH Wu, QY Wei, FA Ponce, ...
Journal of Applied Physics 106 (1), 013720, 2009
22 2009 Effect of misfit dislocations on luminescence in m-plane InGaN quantum wells Y Huang, KW Sun, AM Fischer, QY Wei, R Juday, FA Ponce, R Kato, ...
Applied Physics Letters 98 (26), 261914, 2011
21 2011 Free carrier accumulation at cubic AlGaN/GaN heterojunctions QY Wei, T Li, JY Huang, FA Ponce, E Tschumak, A Zado, DJ As
Applied Physics Letters 100 (14), 142108, 2012
18 2012 Early stages of mechanical deformation in indium phosphide with the zinc blende structure CM Almeida, R Prioli, QY Wei, FA Ponce
Journal of Applied Physics 112 (6), 063514, 2012
13 2012 High quality a-plane GaN films grown on cone-shaped patterned r-plane sapphire substrates YQ Sun, ZH Wu, J Yin, YY Fang, H Wang, CH Yu, X Hui, CQ Chen, ...
Thin Solid Films 519 (8), 2508-2512, 2011
13 2011 Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapordeposition J Liu, Y Zhang, Z Lochner, SS Kim, H Kim, JH Ryou, SC Shen, PD Yoder, ...
Journal of Crystal Growth 315 (1), 272-277, 2011
12 2011 Misfit strain relaxation in ZH Wu, KW Sun, QY Wei, AM Fischer, FA Ponce, Y Kawai, M Iwaya, ...
Applied Physics Letters 96 (7), 071909, 2010
10 2010 Capacitance Voltage Characteristics and Electron Holography on Cubic AlGaN/GaN Heterojunctions DJ As, A Zado, QY Wei, T Li, JY Huang, FA Ponce
Japanese Journal of Applied Physics 52 (8S), 08JN04, 2013
9 2013 Nanoscale dislocation patterning by scratching in an atomic force microscope FA Ponce, QY Wei, ZH Wu, HD Fonseca-Filho, CM Almeida, R Prioli, ...
Journal of Applied Physics 106 (7), 076106, 2009
9 2009 Growth of linearly ordered arrays of InAs nanocrystals on scratched InP HD Fonseca-Filho, CM Almeida, R Prioli, MP Pires, PL Souza, ZH Wu, ...
Journal of Applied Physics 107 (5), 054313, 2010
7 2010 Reduction of structural defects in ZH Wu, YQ Sun, J Yin, YY Fang, JN Dai, CQ Chen, QY Wei, T Li, KW Sun, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2011
5 2011 Polarization effects in 2‐DEG and 2‐DHG AlGaN/AlN/GaN multi‐heterostructures measured by electron holography QY Wei, ZH Wu, FA Ponce, J Hertkorn, F Scholz
physica status solidi (b) 247 (7), 1722-1724, 2010
5 2010 Performance improvement of InGaN-based laser diodes by epitaxial layer structure design J Liu, Y Zhang, Z Lochner, S Kim, H Kim, JH Ryou, SC Shen, PD Yoder, ...
Proceedings Volume 7602, Gallium Nitride Materials and Devices V 7602, 226-231, 2010
4 2010 