Sokrates T Pantelides
Sokrates T Pantelides
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Vertical and in-plane heterostructures from WS 2/MoS 2 monolayers
Y Gong, J Lin, X Wang, G Shi, S Lei, Z Lin, X Zou, G Ye, R Vajtai, ...
Nature materials 13 (12), 1135-1142, 2014
Bandgap Engineering of Strained Monolayer and Bilayer MoS2
HJ Conley, B Wang, JI Ziegler, RF Haglund Jr, ST Pantelides, KI Bolotin
Nano letters 13 (8), 3626-3630, 2013
First-principles calculation of transport properties of a molecular device
M Di Ventra, ST Pantelides, ND Lang
Physical review letters 84 (5), 979, 2000
Atom-by-atom structural and chemical analysis by annular dark-field electron microscopy
OL Krivanek, MF Chisholm, V Nicolosi, TJ Pennycook, GJ Corbin, ...
Nature 464 (7288), 571-574, 2010
The electronic structure of impurities and other point defects in semiconductors
ST Pantelides
Reviews of Modern Physics 50 (4), 797, 1978
Defects Engineered Monolayer MoS2 for Improved Hydrogen Evolution Reaction
G Ye, Y Gong, J Lin, B Li, Y He, ST Pantelides, W Zhou, R Vajtai, ...
Nano letters 16 (2), 1097-1103, 2016
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
GY Chung, CC Tin, JR Williams, K McDonald, RK Chanana, RA Weller, ...
IEEE Electron Device Letters 22 (4), 176-178, 2001
Theory of hydrogen diffusion and reactions in crystalline silicon
CG Van de Walle, PJH Denteneer, Y Bar-Yam, ST Pantelides
Physical review B 39 (15), 10791, 1989
Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
GY Chung, CC Tin, JR Williams, K McDonald, M Di Ventra, ST Pantelides, ...
Applied Physics Letters 76 (13), 1713-1715, 2000
Control of Doping by Impurity Chemical Potentials: Predictions for -Type ZnO
Y Yan, SB Zhang, ST Pantelides
Physical Review Letters 86 (25), 5723, 2001
Self-consistent method for point defects in semiconductors: Application to the vacancy in silicon
J Bernholc, NO Lipari, ST Pantelides
Physical Review Letters 41 (13), 895, 1978
Band gap engineering and layer-by-layer mapping of selenium-doped molybdenum disulfide
Y Gong, Z Liu, AR Lupini, G Shi, J Lin, S Najmaei, Z Lin, AL Elías, ...
Nano letters 14 (2), 442-449, 2014
Microscopic theory of atomic diffusion mechanisms in silicon
R Car, PJ Kelly, A Oshiyama, ST Pantelides
Physica B+ C 127 (1-3), 401-407, 1984
Electronic structure, spectra, and properties of 4: 2-coordinated materials. I. Crystalline and amorphous SiO 2 and GeO 2
ST Pantelides, WA Harrison
Physical Review B 13 (6), 2667, 1976
Defects in amorphous silicon: A new perspective
ST Pantelides
Physical review letters 57 (23), 2979, 1986
Native defects and self-compensation in ZnSe
DB Laks, CG Van de Walle, GF Neumark, PE Blöchl, ST Pantelides
Physical Review B 45 (19), 10965, 1992
First-principles calculations of solubilities and doping limits: Li, Na, and N in ZnSe
CG Van de Walle, DB Laks, GF Neumark, ST Pantelides
Physical Review B 47 (15), 9425, 1993
Monolayer PtSe2, a New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt
Y Wang, L Li, W Yao, S Song, JT Sun, J Pan, X Ren, C Li, E Okunishi, ...
Nano letters 15 (6), 4013-4018, 2015
Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopy
AR Klots, AKM Newaz, B Wang, D Prasai, H Krzyzanowska, J Lin, ...
Scientific reports 4, 6608, 2014
First-principles calculations of self-diffusion constants in silicon
PE Blöchl, E Smargiassi, R Car, DB Laks, W Andreoni, ST Pantelides
Physical review letters 70 (16), 2435, 1993
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