Geok Ing Ng
Geok Ing Ng
E-mail confirmado em
Citado por
Citado por
Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al 2 O …
ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ...
Applied Physics Letters 95 (22), 223501, 2009
Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with passivation
ZH Liu, GI Ng, H Zhou, S Arulkumaran, YKT Maung
Applied Physics Letters 98 (11), 113506, 2011
AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si (111)
S Tripathy, VKX Lin, SB Dolmanan, JPY Tan, RS Kajen, LK Bera, SL Teo, ...
Applied Physics Letters 101 (8), 082110, 2012
Flexible ionic‐electronic hybrid oxide synaptic TFTs with programmable dynamic plasticity for brain‐inspired neuromorphic computing
RA John, J Ko, MR Kulkarni, N Tiwari, NA Chien, NG Ing, WL Leong, ...
Small 13 (32), 1701193, 2017
Reactive sputter deposition and characterization of tantalum nitride thin films
K Radhakrishnan, NG Ing, R Gopalakrishnan
Materials Science and Engineering: B 57 (3), 224-227, 1999
0.10 μm graded InGaAs channel InP HEMT with 305 GHz fTand 340 GHz fmax
M Wojtowicz, R Lai, DC Streit, GI Ng, TR Block, KL Tan, PH Liu, ...
IEEE Electron Device Letters 15 (11), 477-479, 1994
Low‐ and high‐field transport properties of pseudomorphic InxGa1−xAs/In0.52Al0.48As (0.53≤x≤0.65) modulation‐doped heterostructures
WP Hong, GI Ng, PK Bhattacharya, D Pavlidis, S Willing, B Das
Journal of applied physics 64 (4), 1945-1949, 1988
Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si (111) substrate
S Arulkumaran, GI Ng, S Vicknesh, H Wang, KS Ang, JPY Tan, VK Lin, ...
Japanese Journal of Applied Physics 51 (11R), 111001, 2012
Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon
G Ye, H Wang, S Arulkumaran, GI Ng, R Hofstetter, Y Li, MJ Anand, ...
Applied Physics Letters 103 (14), 142109, 2013
Temperature-dependent forward gate current transport in atomic-layer-deposited metal-insulator-semiconductor high electron mobility transistor
ZH Liu, GI Ng, S Arulkumaran, YKT Maung, H Zhou
Applied Physics Letters 98 (16), 163501, 2011
Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from −50 to
ZH Liu, S Arulkumaran, GI Ng
Applied physics letters 94 (14), 142105, 2009
Gallium Nitride Transistors on Large-Diameter Si(111) Substrate
S Arulkumaran, GI Ng
Gallium Nitride (GaN): Physics, Devices, and Technology, 63-107, 2015
Design and experimental characteristics of strained In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (x> 0.53) HEMTs
GI Ng, D Pavlidis, M Jaffe, J Singh, HF Chau
IEEE transactions on electron devices 36 (10), 2249-2259, 1989
High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With Gate Insulator Grown by ALD
ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ...
IEEE electron device letters 31 (2), 96-98, 2009
Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate
S Arulkumaran, ZH Liu, GI Ng, WC Cheong, R Zeng, J Bu, H Wang, ...
Thin Solid Films 515 (10), 4517-4521, 2007
Improved Power Device Figure-of-Merit (4.0× 108 V2 Ω-1 cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si
S Arulkumaran, S Vicknesh, NG Ing, SL Selvaraj, T Egawa
Applied physics express 4 (8), 084101, 2011
Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal–oxide–semiconductor-compatible non-gold metal stack
S Arulkumaran, GI Ng, S Vicknesh, H Wang, KS Ang, CM Kumar, KL Teo, ...
Applied Physics Express 6 (1), 016501, 2012
Improved Linearity for Low-Noise Applications in 0.25-GaN MISHEMTs Using ALDas Gate Dielectric
ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ...
IEEE Electron Device Letters 31 (8), 803-805, 2010
Low-temperature chemical transformations for high-performance solution-processed oxide transistors
RA John, NA Chien, S Shukla, N Tiwari, C Shi, NG Ing, N Mathews
Chemistry of Materials 28 (22), 8305-8313, 2016
Effect of gate-source and gate-drain passivation on current collapse in high-electron-mobility transistors on silicon
S Arulkumaran, GI Ng, ZH Liu
Applied physics letters 90 (17), 173504, 2007
O sistema não pode executar a operação agora. Tente novamente mais tarde.
Artigos 1–20