Mindaugas Lukosius
Mindaugas Lukosius
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Residual metallic contamination of transferred chemical vapor deposited graphene
G Lupina, J Kitzmann, I Costina, M Lukosius, C Wenger, A Wolff, S Vaziri, ...
ACS nano 9 (5), 4776-4785, 2015
Impact of Temperature on the Resistive Switching Behavior of Embedded-Based RRAM Devices
C Walczyk, D Walczyk, T Schroeder, T Bertaud, M Sowinska, M Lukosius, ...
IEEE transactions on electron devices 58 (9), 3124-3131, 2011
Pulse-induced low-power resistive switching in metal-insulator-metal diodes for nonvolatile memory applications
C Walczyk, C Wenger, R Sohal, M Lukosius, A Fox, J Dąbrowski, ...
Journal of Applied Physics 105 (11), 114103, 2009
Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures
M Sowinska, T Bertaud, D Walczyk, S Thiess, MA Schubert, M Lukosius, ...
Applied Physics Letters 100 (23), 233509, 2012
Graphene growth on Ge (100)/Si (100) substrates by CVD method
I Pasternak, M Wesolowski, I Jozwik, M Lukosius, G Lupina, P Dabrowski, ...
Scientific reports 6 (1), 1-7, 2016
Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells
D Walczyk, C Walczyk, T Schroeder, T Bertaud, M Sowińska, M Lukosius, ...
Microelectronic Engineering 88 (7), 1133-1135, 2011
Microscopic model for the nonlinear behavior of high- metal-insulator-metal capacitors
C Wenger, G Lupina, M Lukosius, O Seifarth, HJ Müssig, S Pasko, C Lohe
Journal of Applied Physics 103 (10), 104103, 2008
Metal-free CVD graphene synthesis on 200 mm Ge/Si (001) substrates
M Lukosius, J Dabrowski, J Kitzmann, O Fursenko, F Akhtar, M Lisker, ...
ACS applied materials & interfaces 8 (49), 33786-33793, 2016
On the role of Ti adlayers for resistive switching in -based metal-insulator-metal structures: Top versus bottom electrode integration
C Walczyk, C Wenger, D Walczyk, M Lukosius, I Costina, M Fraschke, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2011
Optical properties and band gap characterization of high dielectric constant oxides
O Fursenko, J Bauer, G Lupina, P Dudek, M Lukosius, C Wenger, ...
Thin Solid Films 520 (14), 4532-4535, 2012
Band alignment and electron traps in layers on (100)Si
WC Wang, M Badylevich, VV Afanas’ ev, A Stesmans, C Adelmann, ...
Applied physics letters 95 (13), 132903, 2009
Influence of the electrode material on metal-insulator-metal capacitors
C Wenger, M Lukosius, HJ Müssig, G Ruhl, S Pasko, C Lohe
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
High performance metal–insulator–metal capacitors with atomic vapor deposited HfO2 dielectrics
M Lukosius, C Walczyk, M Fraschke, D Wolansky, H Richter, C Wenger
Thin Solid Films 518 (15), 4380-4384, 2010
Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition
K Frohlich, R Luptak, E Dobrocka, K Husekova, K Cico, A Rosova, ...
Materials science in semiconductor processing 9 (6), 1065-1072, 2006
Metallorganic chemical vapor deposition of dysprosium scandate high-k layers using mmp-type precursors
S Van Elshocht, P Lehnen, B Seitzinger, A Abrutis, C Adelmann, B Brijs, ...
Journal of The Electrochemical Society 153 (9), F219, 2006
Investigation of atomic vapour deposited TiN/HfO2/SiO2 gate stacks for MOSFET devices
C Wenger, M Lukosius, I Costina, R Sorge, J Dabrowski, HJ Müssig, ...
Microelectronic engineering 85 (8), 1762-1765, 2008
Resistive switching characteristics of integrated polycrystalline hafnium oxide based one transistor and one resistor devices fabricated by atomic vapor deposition methods
HD Kim, F Crupi, M Lukosius, A Trusch, C Walczyk, C Wenger
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2015
The role of the HfO2–TiN interface in capacitance–voltage nonlinearity of Metal-Insulator-Metal capacitors
C Wenger, M Lukosius, G Weidner, HJ Müssig, S Pasko, C Lohe
Thin Solid Films 517 (23), 6334-6336, 2009
Plasma-enhanced chemical vapor deposition of amorphous Si on graphene
G Lupina, C Strobel, J Dabrowski, G Lippert, J Kitzmann, HM Krause, ...
Applied Physics Letters 108 (19), 193105, 2016
Resistive switching behavior in TiN/HfO2/Ti/TiN devices
D Walczyk, T Bertaud, M Sowinska, M Lukosius, MA Schubert, A Fox, ...
2012 International Semiconductor Conference Dresden-Grenoble (ISCDG), 143-146, 2012
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