Residual metallic contamination of transferred chemical vapor deposited graphene G Lupina, J Kitzmann, I Costina, M Lukosius, C Wenger, A Wolff, S Vaziri, ...
ACS nano 9 (5), 4776-4785, 2015
313 2015 Impact of Temperature on the Resistive Switching Behavior of Embedded C Walczyk, D Walczyk, T Schroeder, T Bertaud, M Sowinska, M Lukosius, ...
IEEE transactions on electron devices 58 (9), 3124-3131, 2011
271 2011 Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications C Walczyk, C Wenger, R Sohal, M Lukosius, A Fox, J Dąbrowski, ...
Journal of Applied Physics 105 (11), 2009
138 2009 Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures M Sowinska, T Bertaud, D Walczyk, S Thiess, MA Schubert, M Lukosius, ...
Applied Physics Letters 100 (23), 2012
114 2012 Graphene growth on Ge (100)/Si (100) substrates by CVD method I Pasternak, M Wesolowski, I Jozwik, M Lukosius, G Lupina, P Dabrowski, ...
Scientific reports 6 (1), 21773, 2016
113 2016 Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells D Walczyk, C Walczyk, T Schroeder, T Bertaud, M Sowińska, M Lukosius, ...
Microelectronic Engineering 88 (7), 1133-1135, 2011
79 2011 Metal-free CVD graphene synthesis on 200 mm Ge/Si (001) substrates M Lukosius, J Dabrowski, J Kitzmann, O Fursenko, F Akhtar, M Lisker, ...
ACS applied materials & interfaces 8 (49), 33786-33793, 2016
75 2016 Microscopic model for the nonlinear behavior of high-k metal-insulator-metal capacitors C Wenger, G Lupina, M Lukosius, O Seifarth, HJ Müssig, S Pasko, C Lohe
Journal of Applied Physics 103 (10), 2008
68 2008 On the role of Ti adlayers for resistive switching in HfO2-based metal-insulator-metal structures: Top versus bottom electrode integration C Walczyk, C Wenger, D Walczyk, M Lukosius, I Costina, M Fraschke, ...
Journal of Vacuum Science & Technology B 29 (1), 2011
63 2011 Band alignment and electron traps in Y2O3 layers on (100) Si WC Wang, M Badylevich, VV Afanas’Ev, A Stesmans, C Adelmann, ...
Applied physics letters 95 (13), 2009
52 2009 Optical properties and band gap characterization of high dielectric constant oxides O Fursenko, J Bauer, G Lupina, P Dudek, M Lukosius, C Wenger, ...
Thin Solid Films 520 (14), 4532-4535, 2012
51 2012 Influence of the electrode material on HfO2 metal-insulator-metal capacitors C Wenger, M Lukosius, HJ Müssig, G Ruhl, S Pasko, C Lohe
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
40 2009 Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition K Frohlich, R Luptak, E Dobrocka, K Husekova, K Cico, A Rosova, ...
Materials science in semiconductor processing 9 (6), 1065-1072, 2006
36 2006 High performance metal–insulator–metal capacitors with atomic vapor deposited HfO2 dielectrics M Lukosius, C Walczyk, M Fraschke, D Wolansky, H Richter, C Wenger
Thin Solid Films 518 (15), 4380-4384, 2010
34 2010 Investigation of atomic vapour deposited TiN/HfO2/SiO2 gate stacks for MOSFET devices C Wenger, M Lukosius, I Costina, R Sorge, J Dabrowski, HJ Müssig, ...
Microelectronic Engineering 85 (8), 1762-1765, 2008
29 2008 Graphene Schottky junction on pillar patterned silicon substrate G Luongo, A Grillo, F Giubileo, L Iemmo, M Lukosius, ...
Nanomaterials 9 (5), 659, 2019
28 2019 The role of the HfO2–TiN interface in capacitance–voltage nonlinearity of Metal-Insulator-Metal capacitors C Wenger, M Lukosius, G Weidner, HJ Müssig, S Pasko, C Lohe
Thin Solid Films 517 (23), 6334-6336, 2009
28 2009 Metallorganic chemical vapor deposition of dysprosium scandate high-k layers using mmp-type precursors S Van Elshocht, P Lehnen, B Seitzinger, A Abrutis, C Adelmann, B Brijs, ...
Journal of The Electrochemical Society 153 (9), F219, 2006
28 2006 Influence of plasma treatment on SiO2 /Si and Si3 N4 /Si substrates for large-scale transfer of graphene R Lukose, M Lisker, F Akhtar, M Fraschke, T Grabolla, A Mai, M Lukosius
Scientific reports 11 (1), 13111, 2021
26 2021 Resistive switching characteristics of integrated polycrystalline hafnium oxide based one transistor and one resistor devices fabricated by atomic vapor deposition methods HD Kim, F Crupi, M Lukosius, A Trusch, C Walczyk, C Wenger
Journal of Vacuum Science & Technology B 33 (5), 2015
25 2015 
Christian WengerIHP GmbH - Leibniz institute for innovative microelectronicsE-mail confirmado em ihp-microelectronics.com
