Ya-Hong Xie
Ya-Hong Xie
University of California Los Angeles, Materials Sciences & Engineering
E-mail confirmado em ucla.edu - Página inicial
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Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates
EA Fitzgerald, YH Xie, ML Green, D Brasen, AR Kortan, J Michel, YJ Mii, ...
Applied physics letters 59 (7), 811-813, 1991
8651991
Relaxed GexSi1−x structures for III–V integration with Si and high mobility two‐dimensional electron gases in Si
EA Fitzgerald, YH Xie, D Monroe, PJ Silverman, JM Kuo, AR Kortan, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1992
6571992
Impurity enhancement of the 1.54‐μm Er3+ luminescence in silicon
J Michel, JL Benton, RF Ferrante, DC Jacobson, DJ Eaglesham, ...
Journal of applied physics 70 (5), 2672-2678, 1991
5421991
Light emission from silicon
SS Iyer, YH Xie
Science 260 (5104), 40-46, 1993
4621993
Light emission from silicon
SS Iyer, YH Xie
Science 260 (5104), 40-46, 1993
4551993
Size, shape, and composition of luminescent species in oxidized Si nanocrystals and H-passivated porous Si
S Schuppler, SL Friedman, MA Marcus, DL Adler, YH Xie, FM Ross, ...
Physical Review B 52 (7), 4910, 1995
4281995
Luminescence and structural study of porous silicon films
YH Xie, WL Wilson, FM Ross, JA Mucha, EA Fitzgerald, JM Macaulay, ...
Journal of applied physics 71 (5), 2403-2407, 1992
3871992
Dimensions of luminescent oxidized and porous silicon structures
S Schuppler, SL Friedman, MA Marcus, DL Adler, YH Xie, FM Ross, ...
Physical review letters 72 (16), 2648, 1994
3621994
Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy
YJ Mii, YH Xie, EA Fitzgerald, D Monroe, FA Thiel, BE Weir, LC Feldman
Applied physics letters 59 (13), 1611-1613, 1991
3411991
Semiconductor surface roughness: dependence on sign and magnitude of bulk strain
YH Xie, GH Gilmer, C Roland, PJ Silverman, SK Buratto, JY Cheng, ...
Physical Review Letters 73 (22), 3006, 1994
3241994
Very high mobility two‐dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy
YH Xie, D Monroe, EA Fitzgerald, PJ Silverman, FA Thiel, GP Watson
Applied physics letters 63 (16), 2263-2264, 1993
2371993
Semiconductor heterostructure devices with strained semiconductor layers
D Brasen, EA Fitzgerald Jr, ML Green, DP Monroe, PJ Silverman, YH Xie
US Patent 5,442,205, 1995
2251995
Surface morphology of related GexSi1−x films
JWP Hsu, EA Fitzgerald, YH Xie, PJ Silverman, MJ Cardillo
Applied physics letters 61 (11), 1293-1295, 1992
2231992
Ultra‐sensitive graphene‐plasmonic hybrid platform for label‐free detection
P Wang, O Liang, W Zhang, T Schroeder, YH Xie
Advanced Materials 25 (35), 4918-4924, 2013
1822013
Relaxed template for fabricating regularly distributed quantum dot arrays
YH Xie, SB Samavedam, M Bulsara, TA Langdo, EA Fitzgerald
Applied physics letters 71 (24), 3567-3568, 1997
1691997
Vertical graphene base transistor
W Mehr, J Dabrowski, JC Scheytt, G Lippert, YH Xie, MC Lemme, ...
IEEE Electron Device Letters 33 (5), 691-693, 2012
1612012
Absorption and luminescence studies of free-standing porous silicon films
YH Xie, MS Hybertsen, WL Wilson, SA Ipri, GE Carver, WL Brown, E Dons, ...
Physical Review B 49 (8), 5386, 1994
1471994
Absorption and luminescence studies of free-standing porous silicon films
YH Xie, MS Hybertsen, WL Wilson, SA Ipri, GE Carver, WL Brown, E Dons, ...
Physical Review B 49 (8), 5386, 1994
1451994
Method for making low defect density semiconductor heterostructure and devices made thereby
D Brasen, EA Fitzgerald Jr, ML Green, YH Xie
US Patent 5,221,413, 1993
1391993
Large scale pattern graphene electrode for high performance in transparent organic single crystal field-effect transistors
W Liu, BL Jackson, J Zhu, CQ Miao, CH Chung, YJ Park, K Sun, J Woo, ...
Acs Nano 4 (7), 3927-3932, 2010
1352010
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