Siddharth Rajan
Siddharth Rajan
Electrical and Computer Engineering, Ohio State University
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Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
High-power AlGaN/GaN HEMTs for ka-band applications
T Palacios, A Chakraborty, S Rajan, C Poblenz, S Keller, SP DenBaars, ...
IEEE Electron Device Letters 26 (11), 781-783, 2005
Room temperature intrinsic ferromagnetism in epitaxial manganese selenide films in the monolayer limit
DJ O’Hara, T Zhu, AH Trout, AS Ahmed, YK Luo, CH Lee, MR Brenner, ...
Nano letters 18 (5), 3125-3131, 2018
p-type doping of MoS2 thin films using Nb
MR Laskar, DN Nath, L Ma, EW Lee, CH Lee, T Kent, Z Yang, R Mishra, ...
Applied Physics Letters 104 (9), 092104, 2014
Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces
P Moetakef, TA Cain, DG Ouellette, JY Zhang, DO Klenov, A Janotti, ...
Applied Physics Letters 99 (23), 232116, 2011
N-polar high electron mobility transistors
S Rajan, A Chini, MH Wong, JS Speck, UK Mishra
Journal of Applied Physics 102 (4), 044501, 2007
Large area single crystal (0001) oriented MoS2
MR Laskar, L Ma, S Kannappan, P Sung Park, S Krishnamoorthy, ...
Applied Physics Letters 102 (25), 252108, 2013
Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors
C Poblenz, P Waltereit, S Rajan, S Heikman, UK Mishra, JS Speck
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004
Influence of the dynamic access resistance in the g/sub m/and f/sub T/linearity of AlGaN/GaN HEMTs
T Palacios, S Rajan, A Chakraborty, S Heikman, S Keller, SP DenBaars, ...
IEEE Transactions on Electron Devices 52 (10), 2117-2123, 2005
Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures
Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ...
Applied Physics Letters 112 (17), 173502, 2018
Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor
S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ...
Applied Physics Letters 111 (2), 023502, 2017
Electrical properties of atomic layer deposited aluminum oxide on gallium nitride
M Esposto, S Krishnamoorthy, DN Nath, S Bajaj, TH Hung, S Rajan
Applied Physics Letters 99 (13), 133503, 2011
Polarization-engineered GaN/InGaN/GaN tunnel diodes
S Krishnamoorthy, DN Nath, F Akyol, PS Park, M Esposto, S Rajan
Applied Physics Letters 97 (20), 203502, 2010
N-polar GaN epitaxy and high electron mobility transistors
MH Wong, S Keller, SD Nidhi, DJ Denninghoff, S Kolluri, DF Brown, J Lu, ...
Semiconductor Science and Technology 28 (7), 074009, 2013
High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector
A Singh Pratiyush, S Krishnamoorthy, S Vishnu Solanke, Z Xia, ...
Applied Physics Letters 110 (22), 221107, 2017
Prospects for the application of GaN power devices in hybrid electric vehicle drive systems
M Su, C Chen, S Rajan
Semiconductor Science and Technology 28 (7), 074012, 2013
Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes
F Akyol, DN Nath, S Krishnamoorthy, PS Park, S Rajan
Applied Physics Letters 100 (11), 111118, 2012
Low resistance GaN/InGaN/GaN tunnel junctions
S Krishnamoorthy, F Akyol, PS Park, S Rajan
Applied Physics Letters 102 (11), 113503, 2013
Polarization-induced pn diodes in wide-band-gap nanowires with ultraviolet electroluminescence
SD Carnevale, TF Kent, PJ Phillips, MJ Mills, S Rajan, RC Myers
Nano letters 12 (2), 915-920, 2012
Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE
S Rajan, P Waltereit, C Poblenz, SJ Heikman, DS Green, JS Speck, ...
IEEE Electron Device Letters 25 (5), 247-249, 2004
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