Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching A Padovani, L Larcher, O Pirrotta, L Vandelli, G Bersuker
IEEE Transactions on electron devices 62 (6), 1998-2006, 2015
221 2015 Experimental and theoretical study of electrode effects in HfO2 based RRAM C Cagli, J Buckley, V Jousseaume, T Cabout, A Salaun, H Grampeix, ...
2011 International Electron Devices Meeting, 28.7. 1-28.7. 4, 2011
108 2011 Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries O Pirrotta, L Larcher, M Lanza, A Padovani, M Porti, M Nafría, G Bersuker
Journal of Applied Physics 114 (13), 2013
90 2013 Controlling uniformity of RRAM characteristics through the forming process A Kalantarian, G Bersuker, DC Gilmer, D Veksler, B Butcher, A Padovani, ...
2012 IEEE International Reliability Physics Symposium (IRPS), 6C. 4.1-6C. 4.5, 2012
77 2012 Microscopic understanding and modeling of HfO2 RRAM device physics L Larcher, A Padovani, O Pirrotta, L Vandelli, G Bersuker
2012 International Electron Devices Meeting, 20.1. 1-20.1. 4, 2012
61 2012 A novel electronic nose as adaptable device to judge microbiological quality and safety in foodstuff V Sberveglieri, EN Carmona, E Comini, A Ponzoni, D Zappa, O Pirrotta, ...
BioMed research international 2014, 2014
35 2014 Temperature impact (up to 200 °C) on performance and reliability of HfO2 -based RRAMs T Cabout, L Perniola, V Jousseaume, H Grampeix, JF Nodin, A Toffoli, ...
2013 5th IEEE International Memory Workshop, 116-119, 2013
26 2013 Investigation of the role of electrodes on the retention performance of HfOx based RRAM cells by experiments, atomistic simulations and device physical modeling B Traoré, KH Xue, E Vianello, G Molas, P Blaise, B De Salvo, A Padovani, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 5E. 2.1-5E. 2.6, 2013
21 2013 Combined effects of LED lights and chicken manure on Neochloris oleoabundans growth M Altunoz, O Pirrotta, L Forti, G Allesina, S Pedrazzi, O Obali, P Tartarini, ...
Bioresource technology 244, 1261-1268, 2017
20 2017 Progresses in modeling HfOx RRAM operations and variability L Larcher, O Pirrotta, FM Puglisi, A Padovani, P Pavan, L Vandelli
ECS Transactions 64 (14), 49, 2014
18 2014 Interface Engineering of Ag- -Based Conductive Bridge RAM for Reconfigurable Logic Applications G Palma, E Vianello, O Thomas, M Suri, S Onkaraiah, A Toffoli, ...
IEEE Transactions on Electron Devices 61 (3), 793-800, 2014
18 2014 Microscopic understanding and modeling of HfO L Larcher, A Padovani, O Pirrotta, L Vandelli, G Bersuker
Proc. IEEE Int. Electron Devices Meeting (IEDM), 20.1, 0
6 Multi-scale modeling of oxygen vacancies assisted charge transport in sub-stoichiometric TiO x for RRAM application O Pirrotta, A Padovani, L Larcher, L Zhao, B Magyari-Köpe, Y Nishi
Proc. Int. Conf. Simul. Semicond. Processes Devices, 37-40, 2014
5 2014 IEDM C Cagli, J Buckley, V Jousseaume, T Cabout, A Salaun, H Grampeix, ...
IEEE International 28, 1-28.7, 0
5 Modellizzazione microscopica e simulazione di dielettrici ad alta costante dielettrica per dispositivi logici e di memoria innovativi O PIRROTTA
2015 Modeling the charge transport and degradation in HfO2 dielectric for reliability improvement and life-time predictions in logic and memory devices A Padovani, L Larcher, L Vandelli, O Pirrotta, P Pavan
2011 International Semiconductor Device Research Symposium (ISDRS), 1-2, 2011
2011