| Large-signal model of graphene field-effect transistors—Part I: Compact modeling of GFET intrinsic capacitances F Pasadas, D Jiménez IEEE Transactions on Electron Devices 63 (7), 2936-2941, 2016 | 55 | 2016 |
| Large-signal model of graphene field-effect transistors—Part II: Circuit performance benchmarking F Pasadas, D Jiménez IEEE Transactions on Electron Devices 63 (7), 2942-2947, 2016 | 35 | 2016 |
| A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications A Medina-Rull, F Pasadas, EG Marin, A Toral-Lopez, J Cuesta, A Godoy, ... IEEE Access 8, 209055-209063, 2020 | 29 | 2020 |
| Compact modeling technology for the simulation of integrated circuits based on graphene field‐effect transistors F Pasadas, PC Feijoo, N Mavredakis, A Pacheco‐Sanchez, FA Chaves, ... Advanced Materials, 2201691, 2022 | 28 | 2022 |
| Small-signal model for 2D-material based FETs targeting radio-frequency applications: The importance of considering nonreciprocal capacitances F Pasadas, W Wei, E Pallecchi, H Happy, D Jiménez IEEE Transactions on Electron Devices 64 (11), 4715-4723, 2017 | 28 | 2017 |
| Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor PC Feijoo, F Pasadas, JM Iglesias, MJ Martin, R Rengel, C Li, W Kim, ... Nanotechnology 28 (48), 485203, 2017 | 26 | 2017 |
| Large-signal model of 2DFETs: Compact modeling of terminal charges and intrinsic capacitances F Pasadas, EG Marin, A Toral-Lopez, FG Ruiz, A Godoy, S Park, ... npj 2D Materials and Applications 3 (1), 47, 2019 | 22 | 2019 |
| Radio Frequency Performance Projection and Stability Tradeoff of h-BN Encapsulated Graphene Field-Effect Transistors PC Feijoo, F Pasadas, JM Iglesias, R Rengel, D Jiménez IEEE Transactions on Electron Devices 66 (3), 1567-1573, 2019 | 18 | 2019 |
| GFET Asymmetric Transfer Response Analysis through Access Region Resistances A Toral-Lopez, EG Marin, F Pasadas, JM Gonzalez-Medina, FG Ruiz, ... Nanomaterials 9 (7), 1027, 2019 | 15 | 2019 |
| Sensitivity analysis of a Graphene Field-Effect Transistors by means of Design of Experiments G Spinelli, P Lamberti, V Tucci, F Pasadas, D Jiménez Mathematics and Computers in Simulation 183, 187-197, 2021 | 14 | 2021 |
| Large-Signal Model of the Metal–Insulator–Graphene Diode Targeting RF Applications F Pasadas, M Saeed, A Hamed, Z Wang, R Negra, D Neumaier, ... IEEE Electron Device Letters 40 (6), 1005-1008, 2019 | 13 | 2019 |
| Does carrier velocity saturation help to enhance f max in graphene field-effect transistors? PC Feijoo, F Pasadas, M Bonmann, M Asad, X Yang, A Generalov, ... Nanoscale Advances, 2020 | 11 | 2020 |
| Compact Modeling of pH-Sensitive FETs Based on 2-D Semiconductors T El Grour, F Pasadas, A Medina-Rull, M Najari, EG Marin, A Toral-Lopez, ... IEEE Transactions on Electron Devices 68 (11), 5916-5919, 2021 | 9 | 2021 |
| Unveiling the impact of the bias-dependent charge neutrality point on graphene based multi-transistor applications F Pasadas, A Medina-Rull, PC Feijoo, A Pacheco-Sanchez, EG Marin, ... Nano Express 2 (3), 036001, 2021 | 9 | 2021 |
| Non-quasi-static effects in graphene field-effect transistors under high-frequency operation F Pasadas, D Jiménez IEEE Transactions on Electron Devices 67 (5), 2188-2196, 2020 | 9 | 2020 |
| Tolerance analysis of a GFET transistor for aerospace and aeronautical application P Lamberti, M La Mura, F Pasadas, D Jiménez, V Tucci IOP Conference Series: Materials Science and Engineering 1024 (1), 012005, 2021 | 7 | 2021 |
| Exploiting Ambipolarity in Graphene Field‐Effect Transistors for Novel Designs on High‐Frequency Analog Electronics F Pasadas, A Medina‐Rull, FG Ruiz, JN Ramos‐Silva, ... Small 19 (49), 2303595, 2023 | 6 | 2023 |
| Compact Modeling of Two-Dimensional Field-Effect Biosensors F Pasadas, T El Grour, E G Marin, A Medina-Rull, A Toral-Lopez, ... Sensors 23 (4), 1840, 2023 | 6 | 2023 |
| Large-signal model of the bilayer graphene field-effect transistor targeting radio-frequency applications: Theory versus experiment F Pasadas, D Jiménez Journal of Applied Physics 118 (24), 2015 | 6 | 2015 |
| Two-dimensional tellurium-based diodes for RF applications AM Askar, P Palacios, F Pasadas, M Saeed, MR Mohammadzadeh, ... npj 2D Materials and Applications 7 (1), 70, 2023 | 5 | 2023 |
David JiménezProfessor at UAB (Universitat Autònoma de Barcelona)E-mail confirmado em uab.es
