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Priyank Rastogi
Priyank Rastogi
Intel Technologies India Pvt. Ltd.
E-mail confirmado em intel.com
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Doping Strategies for Monolayer MoS2 via Surface Adsorption: A Systematic Study
P Rastogi, S Kumar, S Bhowmick, A Agarwal, YS Chauhan
The Journal of Physical Chemistry C 118 (51), 30309-30314, 2014
1172014
Effective doping of monolayer phosphorene by surface adsorption of atoms for electronic and spintronic applications
P Rastogi, S Kumar, S Bhowmick, A Agarwal, YS Chauhan
IETE Journal of Research 63 (2), 205-215, 2017
562017
Intrinsic magnetism in monolayer transition metal trihalides: A comparative study
S Tomar, B Ghosh, S Mardanya, P Rastogi, BS Bhadoria, YS Chauhan, ...
Journal of Magnetism and Magnetic Materials 489, 165384, 2019
542019
Impact of channel thickness variation on bandstructure and source-to-drain tunneling in ultra-thin body III-V MOSFETs
T Dutta, S Kumar, P Rastogi, A Agarwal, YS Chauhan
IEEE Journal of the Electron Devices Society 4 (2), 66-71, 2016
402016
Quantum Confinement Effects in Extremely Thin Body Germanium n-MOSFETs
P RASTOGI, T Dutta, S Gupta, A Agarwal, Y Chauhan
IEEE Transactions on Electron Devices, 2015
352015
Charge-based modeling of transition metal dichalcogenide transistors including ambipolar, trapping, and negative capacitance effects
C Yadav, P Rastogi, T Zimmer, YS Chauhan
IEEE Transactions on Electron Devices 65 (10), 4202-4208, 2018
252018
Compact modeling of cross-sectional scaling in gate-all-around FETs: 3-D to 1-D transition
A Dasgupta, P Rastogi, A Agarwal, C Hu, YS Chauhan
IEEE Transactions on Electron Devices 65 (3), 1094-1100, 2018
212018
Band-to-band tunneling in Γ valley for Ge source lateral tunnel field effect transistor: thickness scaling
P Jain, P Rastogi, C Yadav, A Agarwal, YS Chauhan
Journal of Applied Physics 122 (1), 2017
142017
Adsorption of magnetic transition metals on borophene: an ab initio study
S Tomar, P Rastogi, BS Bhadoria, S Bhowmick, YS Chauhan, A Agarwal
The European Physical Journal B 91 (3), 2018
122018
Explicit model of channel charge, backscattering, and mobility for graphene FET in quasi-ballistic regime
AK Upadhyay, AK Kushwaha, P Rastogi, YS Chauhan, SK Vishvakarma
IEEE Transactions on Electron Devices 65 (12), 5468-5474, 2018
102018
Atomistic study of band structure and transport in extremely thin channel InP MOSFETs
T Dutta, P Kumar, P Rastogi, A Agarwal, YS Chauhan
physica status solidi (a) 213 (4), 898-904, 2016
102016
Compact Modeling of Multi-Layered MoS2 FETs Including Negative Capacitance Effect
K Nandan, C Yadav, P Rastogi, A Toral-Lopez, A Marin-Sanchez, ...
IEEE Journal of the Electron Devices Society 8, 1177-1183, 2020
92020
Significant enhancement of the stark effect in rippled monolayer blue phosphorus
S Agnihotri, P Rastogi, YS Chauhan, A Agarwal, S Bhowmick
The Journal of Physical Chemistry C 122 (9), 5171-5177, 2018
92018
Ab-initio study of doping versus adsorption in monolayer M0S2
P Rastogi, S Kumar, S Bhowmick, A Agarwal, YS Chauhan
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE), 1-5, 2014
92014
Modeling of multi-domain switching in ferroelectric materials: Application to negative capacitance FETs
A Dasgupta, P Rastogi, D Saha, A Gaidhane, A Agarwal, YS Chauhan
2018 IEEE International Electron Devices Meeting (IEDM), 9.2. 1-9.2. 4, 2018
82018
Compact Modeling of Surface Potential and Drain Current in Multi-layered MoS2 FETs
K Nandan, C Yadav, P Rastogi, A Toral-Lopez, A Marin-Sanchez, ...
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020
42020
A review report for next generation of CMOS technology as spintronics: fundamentals, applications and future
SB Rahi, P Rastogi
International Journal of Advances in Engineering & Technology 6 (2), 696, 2013
42013
Analysis and modeling of quantum capacitance in III-V transistors
A Dasgupta, C Yadav, P Rastogi, A Agarwal, YS Chauhan
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE), 1-4, 2014
32014
Atomistic Study of Acoustic Phonon Limited Mobility in Extremely Scaled Si and Ge Films
P Rastogi, S Bhowmick, A Agarwal, S Chauhan
2018 IEEE International Conference on Electronics, Computing and …, 2018
22018
Thermoelectric Properties of CrI3 Monolayer
S Tomar, P Rastogi, BS Bhadoria, S Bhowmick, A Agarwal, YS Chauhan
2018 4th IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2018
12018
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