| Phase transition, effective mass and carrier mobility of MoS2 monolayer under tensile strain S Yu, HD Xiong, K Eshun, H Yuan, Q Li Applied Surface Science 325, 27-32, 2015 | 163 | 2015 |
| Strain-engineering the anisotropic electrical conductance in ReS2 monolayer S Yu, H Zhu, K Eshun, C Shi, M Zeng, Q Li Applied Physics Letters 108 (19), 2016 | 78 | 2016 |
| A computational study of the electronic properties of one-dimensional armchair phosphorene nanotubes S Yu, H Zhu, K Eshun, A Arab, A Badwan, Q Li Journal of Applied Physics 118 (16), 2015 | 54 | 2015 |
| Novel two-dimensional mechano-electric generators and sensors based on transition metal dichalcogenides S Yu, K Eshun, H Zhu, Q Li Scientific Reports 5 (1), 12854, 2015 | 29 | 2015 |
| Doping induces large variation in the electrical properties of MoS2 monolayers K Eshun, HD Xiong, S Yu, Q Li Solid-State Electronics 106, 44-49, 2015 | 25 | 2015 |
| Study of interfacial strain at the α-Al2O3/monolayer MoS2 interface by first principle calculations S Yu, S Ran, H Zhu, K Eshun, C Shi, K Jiang, K Gu, FJ Seo, Q Li Applied Surface Science 428, 593-597, 2018 | 19 | 2018 |
| Two-dimensional hybrid layered materials: strain engineering on the band structure of MoS2/WSe2 hetero-multilayers K Gu, S Yu, K Eshun, H Yuan, H Ye, J Tang, DE Ioannou, C Xiao, H Wang, ... Nanotechnology 28 (36), 365202, 2017 | 10 | 2017 |
| Effects of Doping, Strain and Size on the electrical properties of MoS2 Nanoribbons S Yu, Q Li, K Eshun ECS Transactions 64 (12), 25, 2014 | 9 | 2014 |
| Dirac fermions induced in strained zigzag phosphorus nanotubes and their applications in field effect transistors S Yu, H Zhu, K Eshun, C Shi, M Zeng, K Jiang, Q Li Physical Chemistry Chemical Physics 18 (47), 32521-32527, 2016 | 4 | 2016 |
| Doping Effects on 2D TMDS and Monolayer FETS With PN-Junction or Heterojunction Channels K Eshun George Mason University, 2023 | | 2023 |
| Strain effect engineered in {\alpha}-Al2O3/monolayer MoS2 interface by first principle calculations S Yu, S Ran, H Zhu, K Eshun, C Shi, K Jiang, Q Li arXiv preprint arXiv:1612.09326, 2016 | | 2016 |
| Two-Dimensional Materials: Doping-Induced Variation, Heterojunction FETs and Hybrid Multilayers KP Eshun | | 2014 |
| Effects of Doping, Strain and Size on the Electrical Properties of MoS S Yu, Q Li, K Eshun | | |
