Chris Escott
Chris Escott
E-mail confirmado em unsw.edu.au
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Ano
Single-shot readout of an electron spin in silicon
A Morello, JJ Pla, FA Zwanenburg, KW Chan, KY Tan, H Huebl, ...
Nature 467 (7316), 687-691, 2010
7702010
Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon
A Morello, CC Escott, H Huebl, LHW van Beveren, LCL Hollenberg, ...
Physical Review B 80 (8), 081307, 2009
992009
Charge state control and relaxation in an atomically doped silicon device
SES Andresen, R Brenner, CJ Wellard, C Yang, T Hopf, CC Escott, ...
Nano letters 7 (7), 2000-2003, 2007
802007
Resonant tunnelling features in quantum dots
CC Escott, FA Zwanenburg, A Morello
Nanotechnology 21 (27), 274018, 2010
772010
Probe and control of the reservoir density of states in single-electron devices
M Möttönen, KY Tan, KW Chan, FA Zwanenburg, WH Lim, CC Escott, ...
Physical Review B 81 (16), 161304, 2010
362010
Electron tunnel rates in a donor-silicon single electron transistor hybrid
H Huebl, CD Nugroho, A Morello, CC Escott, MA Eriksson, C Yang, ...
Physical Review B 81 (23), 235318, 2010
252010
Control and readout of electron or hole spin
A Morello, A Dzurak, HG Huebl, RG Clark, LHW Van Beveren, ...
US Patent 8,507,894, 2013
202013
Modelling single electron transfer in Si: P double quantum dots
KH Lee, AD Greentree, JP Dinale, CC Escott, AS Dzurak, RG Clark
Nanotechnology 16 (1), 74, 2004
112004
Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing
W Gilbert, A Saraiva, WH Lim, CH Yang, A Laucht, B Bertrand, N Rambal, ...
arXiv preprint arXiv:2004.11558, 2020
72020
Gate-controlled charge transfer in Si: P double quantum dots
FE Hudson, AJ Ferguson, CC Escott, C Yang, DN Jamieson, RG Clark, ...
Nanotechnology 19 (19), 195402, 2008
62008
Modelling of phosphorus-donor based silicon qubit and nanoelectronic devices
CC Escott
PhD thesis, University of New South Wales, Sydney, Australia, 2008
32008
Scaling of ion implanted Si: P single electron devices
CC Escott, FE Hudson, VC Chan, KD Petersson, RG Clark, AS Dzurak
Nanotechnology 18 (23), 235401, 2007
12007
Controllable Approximations for Spin Qubit Design-Jacob's Ladder of Device Modelling
A Saraiva, C Escott, A West, R Leon, R Zhao, H Yang, A Dzurak
APS 2019, Y29. 013, 2019
2019
High yield fabrication of SPSL-based DUVLEDs on 6-inch sapphire substrates
L Anderson, P Atanackovic, T Bray, S Duvall, C Escott, C Flynn, ...
CLEO: Science and Innovations, STu3R. 7, 2016
2016
Independent Control of Dot Occupancy and Reservoir Electron Density in a One‐electron Quantum Dot
WH Lim, FA Zwanenburg, CH Yang, H Huebl, M Möttönen, KW Chan, ...
AIP Conference Proceedings 1399 (1), 349-350, 2011
2011
Observation of tunnel rates of phosphorus dopants using silicon SETs
H Huebl, CD Nugroho, A Morello, C Escott, AS Dzurak, RG Clark, C Yang, ...
APS, H17. 005, 2009
2009
Towards few-electron double quantum dots in Si: P
FE Hudson, CC Escott, AJ Ferguson, DN Jamieson, C Yang, AS Dzurak, ...
Microelectron. Eng., 2006
2006
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