Optically programmable electron spin memory using semiconductor quantum dots M Kroutvar, Y Ducommun, D Heiss, M Bichler, D Schuh, G Abstreiter, ...
Nature 432 (7013), 81-84, 2004
1087 2004 Coherent properties of a two-level system based on a quantum-dot photodiode A Zrenner, E Beham, S Stufler, F Findeis, M Bichler, G Abstreiter
Nature 418 (6898), 612-614, 2002
935 2002 How many-particle interactions develop after ultrafast excitation of an electron–hole plasma R Huber, F Tauser, A Brodschelm, M Bichler, G Abstreiter, A Leitenstorfer
Nature 414 (6861), 286-289, 2001
686 2001 Strain-Induced Two-Dimensional Electron Gas in Selectively Doped G Abstreiter, H Brugger, T Wolf, H Jorke, HJ Herzog
Physical Review Letters 54 (22), 2441, 1985
609 1985 Sharp-line photoluminescence and two-photon absorption of zero-dimensional biexcitons in a GaAs/AlGaAs structure K Brunner, G Abstreiter, G Böhm, G Tränkle, G Weimann
Physical review letters 73 (8), 1138, 1994
600 1994 Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures D Spirkoska, J Arbiol, A Gustafsson, S Conesa-Boj, F Glas, I Zardo, ...
Physical Review B 80 (24), 245325, 2009
487 2009 Vertical-cavity surface-emitting lasers: design, fabrication, characterization, and applications CW Wilmsen, LA Coldren, H Temkin
Cambridge University Press, 2001
485 2001 Direct observation of controlled coupling in an individual quantum dot molecule HJ Krenner, M Sabathil, EC Clark, A Kress, D Schuh, M Bichler, ...
Physical Review Letters 94 (5), 057402, 2005
450 2005 Condensation of indirect excitons in coupled AlAs/GaAs quantum wells LV Butov, A Zrenner, G Abstreiter, G Böhm, G Weimann
Physical review letters 73 (2), 304, 1994
428 1994 Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy C Colombo, D Spirkoska, M Frimmer, G Abstreiter, AF i Morral
Physical Review B 77 (15), 155326, 2008
425 2008 Photoluminescence from a single GaAs/AlGaAs quantum dot K Brunner, U Bockelmann, G Abstreiter, M Walther, G Böhm, G Tränkle, ...
Physical review letters 69 (22), 3216, 1992
407 1992 Quantum dots formed by interface fluctuations in AlAs/GaAs coupled quantum well structures A Zrenner, LV Butov, M Hagn, G Abstreiter, G Böhm, G Weimann
Physical review letters 72 (21), 3382, 1994
388 1994 Coupled quantum dots fabricated by cleaved edge overgrowth: From artificial atoms to molecules G Schedelbeck, W Wegscheider, M Bichler, G Abstreiter
Science 278 (5344), 1792-1795, 1997
357 1997 Light scattering by free carrier excitations in semiconductors G Abstreiter, M Cardona, A Pinczuk
Light Scattering in Solids IV, 5-150, 1984
341 1984 Intersubband relaxation in GaAs-Al x Ga 1− x As quantum well structures observed directly by an infrared bleaching technique A Seilmeier, HJ Hübner, G Abstreiter, G Weimann, W Schlapp
Physical review letters 59 (12), 1345, 1987
315 1987 Growth and characterization of self-assembled Ge-rich islands on Si G Abstreiter, P Schittenhelm, C Engel, E Silveira, A Zrenner, D Meertens, ...
Semiconductor Science and Technology 11 (11S), 1521, 1996
283 1996 Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires A Fontcuberta i Morral, C Colombo, G Abstreiter, J Arbiol, JR Morante
Applied Physics Letters 92 (6), 063112, 2008
274 2008 Determination of existing stress in silicon films on sapphire substrate using Raman spectroscopy T Englert, G Abstreiter, J Pontcharra
Solid-State Electronics 23 (1), 31-33, 1980
270 1980 Gate-voltage control of spin interactions between electrons and nuclei in a semiconductor JH Smet, RA Deutschmann, F Ertl, W Wegscheider, G Abstreiter, ...
Nature 415 (6869), 281-286, 2002
253 2002 Raman spectroscopy—A versatile tool for characterization of thin films and heterostructures of GaAs and Alx Ga1−x As G Abstreiter, E Bauser, A Fischer, K Ploog
Applied physics 16 (4), 345-352, 1978
241 1978 
Jonathan J. FinleyProfessor of Semiconductor Quantum NanoscienceE-mail confirmado em wsi.tum.de
