A Azizur Rahman
A Azizur Rahman
E-mail confirmado em tifr.res.in
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Gate leakage mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: comparison and modeling
S Turuvekere, N Karumuri, AA Rahman, A Bhattacharya, A DasGupta, ...
IEEE Transactions on electron devices 60 (10), 3157-3165, 2013
1682013
MOVPE growth of semipolar III-nitride semiconductors on CVD graphene
P Gupta, AA Rahman, N Hatui, MR Gokhale, MM Deshmukh, ...
Journal of crystal growth 372, 105-108, 2013
732013
Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth
P Gupta, AA Rahman, S Subramanian, S Gupta, A Thamizhavel, T Orlova, ...
Scientific reports 6 (1), 1-8, 2016
642016
Distorted wurtzite unit cells: Determination of lattice parameters of nonpolar -plane AlGaN and estimation of solid phase Al content
MR Laskar, T Ganguli, AA Rahman, A Mukherjee, N Hatui, MR Gokhale, ...
Journal of Applied Physics 109 (1), 013107, 2011
512011
The mechanism of Ni-assisted GaN nanowire growth
CB Maliakkal, N Hatui, RD Bapat, BA Chalke, AA Rahman, ...
Nano letters 16 (12), 7632-7638, 2016
352016
Free-standing semipolar III-nitride quantum well structures grown on chemical vapor deposited graphene layers
P Gupta, AA Rahman, N Hatui, JB Parmar, BA Chalke, RD Bapat, ...
Applied Physics Letters 103 (18), 181108, 2013
212013
MOVPE growth and characterization of a ‐plane AlGaN over the entire composition range
MR Laskar, T Ganguli, AA Rahman, AP Shah, MR Gokhale, ...
physica status solidi (RRL)–Rapid Research Letters 4 (7), 163-165, 2010
192010
Anisotropic structural and optical properties of -plane AlInN nearly-lattice-matched to GaN
MR Laskar, T Ganguli, AA Rahman, A Arora, N Hatui, MR Gokhale, ...
Applied Physics Letters 98 (18), 181108, 2011
162011
High-resolution X-ray diffraction investigations of the microstructure of MOVPE grown a-plane AlGaN epilayers
MR Laskar, T Ganguli, N Hatui, AA Rahman, MR Gokhale, A Bhattacharya
Journal of crystal growth 315 (1), 208-210, 2011
162011
MOVPE growth of semipolar (112¯ 2) Al1− xInxN across the alloy composition range (0≤ x≤ 0.55)
N Hatui, M Frentrup, AA Rahman, A Kadir, S Subramanian, M Kneissl, ...
Journal of Crystal Growth 411, 106-109, 2015
152015
Influence of buffer layers on the microstructure of MOVPE grown a-plane InN
MR Laskar, T Ganguli, A Kadir, N Hatui, AA Rahman, AP Shah, ...
Journal of crystal growth 315 (1), 233-237, 2011
132011
Direct MOVPE growth of semipolar (112¯ 2) AlxGa1− xN across the alloy composition range
N Hatui, AA Rahman, CB Maliakkal, A Bhattacharya
Journal of Crystal Growth 437, 1-5, 2016
112016
ICP-RIE etching of polar, semi-polar and non-polar AlN: comparison of Cl2/Ar and Cl2/BCl3/Ar plasma chemistry and surface pretreatment
AP Shah, AA Rahman, A Bhattacharya
Semiconductor Science and Technology 30 (1), 015021, 2014
112014
Inductively coupled plasma–reactive ion etching of c- and a-plane AlGaN over the entire Al composition range: Effect of BCl3 pretreatment in Cl2/Ar plasma …
AP Shah, MR Laskar, A Azizur Rahman, MR Gokhale, A Bhattacharya
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31 (6 …, 2013
92013
Optimization of a-plane (112¯ 0) InN grown via MOVPE on a-plane GaN buffer layers on r-plane (11¯ 02) sapphire
MR Laskar, A Kadir, AA Rahman, AP Shah, N Hatui, MR Gokhale, ...
Journal of crystal growth 312 (14), 2033-2037, 2010
72010
Influence of growth parameters on the sub-bandgap absorption of MOVPE-grown GaN measured using photothermal deflection spectroscopy
N Lobo, A Kadir, MR Laskar, AP Shah, MR Gokhale, AA Rahman, ...
Journal of Crystal Growth 310 (23), 4747-4750, 2008
72008
Facile synthesis of WS 2 nanotubes by sulfurization of tungsten thin films: formation mechanism, and structural and optical properties
E Hossain, AA Rahman, RD Bapat, JB Parmar, AP Shah, A Arora, ...
Nanoscale 10 (35), 16683-16691, 2018
62018
Fabrication and characterization of GaN nanowire doubly clamped resonators
CB Maliakkal, JP Mathew, N Hatui, AA Rahman, MM Deshmukh, ...
Journal of Applied Physics 118 (11), 114301, 2015
62015
Comparison of GaN nanowires grown on c-, r- and m-plane sapphire substrates
CB Maliakkal, AA Rahman, N Hatui, BA Chalke, RD Bapat, ...
Journal of Crystal Growth 439, 47-53, 2016
52016
Temperature-dependence of Cl2/Ar ICP-RIE of polar, semipolar, and nonpolar GaN and AlN following BCl3/Ar breakthrough plasma
AP Shah, A Azizur Rahman, A Bhattacharya
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 38 (1 …, 2020
42020
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