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Emily Gallagher
Emily Gallagher
E-mail confirmado em imec.be
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Experimental result and simulation analysis for the use of pixelated illumination from source mask optimization for 22nm logic lithography process
K Lai, AE Rosenbluth, S Bagheri, J Hoffnagle, K Tian, D Melville, ...
Optical Microlithography XXII 7274, 82-93, 2009
702009
Intensive optimization of masks and sources for 22nm lithography
AE Rosenbluth, DO Melville, K Tian, S Bagheri, J Tirapu-Azpiroz, K Lai, ...
Optical Microlithography XXII 7274, 67-81, 2009
662009
Sonic cleaning with an interference signal
EE Fisch, GW Gale, HF Okorn-Schmidt, WA Syverson
US Patent 6,276,370, 2001
602001
Reducing edge die reflectivity in extreme ultraviolet lithography
EE Gallagher, GR McIntyre
US Patent 8,765,331, 2014
522014
Structure and method for fixing phase effects on EUV mask
M Burkhardt, EEF Gallagher
US Patent 9,551,924, 2017
422017
Insertion strategy for EUV lithography
O Wood, J Arnold, T Brunner, M Burkhardt, JHC Chen, D Civay, SSC Fan, ...
Extreme Ultraviolet (EUV) Lithography III 8322, 32-39, 2012
402012
SAQP and EUV block patterning of BEOL metal layers on IMEC's iN7 platform
J Bekaert, P Di Lorenzo, M Mao, S Decoster, S Larivière, JH Franke, ...
Extreme Ultraviolet (EUV) Lithography VIII 10143, 73-87, 2017
342017
Demonstrating the benefits of source-mask optimization and enabling technologies through experiment and simulations
D Melville, AE Rosenbluth, K Tian, K Lai, S Bagheri, J Tirapu-Azpiroz, ...
Optical Microlithography XXIII 7640, 51-68, 2010
342010
Characterization of binary and attenuated phase shift mask blanks for 32nm mask fabrication
T Faure, E Gallagher, M Hibbs, L Kindt, K Racette, R Wistrom, A Zweber, ...
Photomask Technology 2008 7122, 67-78, 2008
302008
Inspection of EUV reticles
DW Pettibone, A Veldman, T Liang, AR Stivers, PJS Mangat, B Lu, ...
Emerging Lithographic Technologies VI 4688, 363-374, 2002
292002
Assist features: placement, impact, and relevance for EUV imaging
I Mochi, V Philipsen, E Gallagher, E Hendrickx, K Lyakhova, F Wittebrood, ...
Extreme Ultraviolet (EUV) Lithography VII 9776, 513-529, 2016
282016
Operation of the sapphire Cerenkov laser
EE Fisch, JE Walsh
Applied physics letters 60 (11), 1298-1300, 1992
281992
Structure for lithographic focus control features
JA Bruce, O Bula, EE Fisch
US Patent 6,577,406, 2003
262003
EUV lithography imaging using novel pellicle membranes
I Pollentier, J Vanpaemel, JU Lee, C Adelmann, H Zahedmanesh, ...
Extreme Ultraviolet (EUV) Lithography VII 9776, 587-600, 2016
252016
Free-standing carbon nanotube films for extreme ultraviolet pellicle application
MY Timmermans, M Mariano, I Pollentier, O Richard, C Huyghebaert, ...
Journal of Micro/Nanolithography, MEMS, and MOEMS 17 (4), 043504-043504, 2018
242018
Novel membrane solutions for the EUV pellicle: better or not?
I Pollentier, JU Lee, M Timmermans, C Adelmann, H Zahedmanesh, ...
Extreme Ultraviolet (EUV) Lithography VIII 10143, 125-134, 2017
232017
Properties and performance of EUVL pellicle membranes
EE Gallagher, J Vanpaemel, I Pollentier, H Zahedmanesh, C Adelmann, ...
Photomask Technology 2015 9635, 206-213, 2015
232015
Structure and method for detection of physical interference during transport of an article
AW Ballantine, EE Fisch, RA Warren
US Patent 6,282,459, 2001
232001
Single exposure EUV patterning of BEOL metal layers on the IMEC iN7 platform
VMB Carballo, J Bekaert, M Mao, BK Kotowska, S Larivière, I Ciofi, ...
Extreme Ultraviolet (EUV) Lithography VIII 10143, 241-250, 2017
212017
Impact of EUV photomask line-edge roughness on wafer prints
ZJ Qi, E Gallagher, Y Negishi, G McIntyre, A Zweber, T Senna, ...
Photomask Technology 2012 8522, 666-673, 2012
212012
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