Emily Gallagher
Emily Gallagher
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Experimental result and simulation analysis for the use of pixelated illumination from source mask optimization for 22nm logic lithography process
K Lai, AE Rosenbluth, S Bagheri, J Hoffnagle, K Tian, D Melville, ...
Optical Microlithography XXII 7274, 82-93, 2009
Intensive optimization of masks and sources for 22nm lithography
AE Rosenbluth, DO Melville, K Tian, S Bagheri, J Tirapu-Azpiroz, K Lai, ...
Optical Microlithography XXII 7274, 67-81, 2009
Sonic cleaning with an interference signal
EE Fisch, GW Gale, HF Okorn-Schmidt, WA Syverson
US Patent 6,276,370, 2001
Reducing edge die reflectivity in extreme ultraviolet lithography
EE Gallagher, GR McIntyre
US Patent 8,765,331, 2014
Structure and method for fixing phase effects on EUV mask
M Burkhardt, EEF Gallagher
US Patent 9,551,924, 2017
Insertion strategy for EUV lithography
O Wood, J Arnold, T Brunner, M Burkhardt, JHC Chen, D Civay, SSC Fan, ...
Extreme Ultraviolet (EUV) Lithography III 8322, 32-39, 2012
SAQP and EUV block patterning of BEOL metal layers on IMEC's iN7 platform
J Bekaert, P Di Lorenzo, M Mao, S Decoster, S Larivière, JH Franke, ...
Extreme Ultraviolet (EUV) Lithography VIII 10143, 73-87, 2017
Demonstrating the benefits of source-mask optimization and enabling technologies through experiment and simulations
D Melville, AE Rosenbluth, K Tian, K Lai, S Bagheri, J Tirapu-Azpiroz, ...
Optical Microlithography XXIII 7640, 51-68, 2010
Characterization of binary and attenuated phase shift mask blanks for 32nm mask fabrication
T Faure, E Gallagher, M Hibbs, L Kindt, K Racette, R Wistrom, A Zweber, ...
Photomask Technology 2008 7122, 67-78, 2008
Inspection of EUV reticles
DW Pettibone, A Veldman, T Liang, AR Stivers, PJS Mangat, B Lu, ...
Emerging Lithographic Technologies VI 4688, 363-374, 2002
Assist features: placement, impact, and relevance for EUV imaging
I Mochi, V Philipsen, E Gallagher, E Hendrickx, K Lyakhova, F Wittebrood, ...
Extreme Ultraviolet (EUV) Lithography VII 9776, 513-529, 2016
Operation of the sapphire Cerenkov laser
EE Fisch, JE Walsh
Applied physics letters 60 (11), 1298-1300, 1992
Structure for lithographic focus control features
JA Bruce, O Bula, EE Fisch
US Patent 6,577,406, 2003
EUV lithography imaging using novel pellicle membranes
I Pollentier, J Vanpaemel, JU Lee, C Adelmann, H Zahedmanesh, ...
Extreme Ultraviolet (EUV) Lithography VII 9776, 587-600, 2016
Free-standing carbon nanotube films for extreme ultraviolet pellicle application
MY Timmermans, M Mariano, I Pollentier, O Richard, C Huyghebaert, ...
Journal of Micro/Nanolithography, MEMS, and MOEMS 17 (4), 043504-043504, 2018
Novel membrane solutions for the EUV pellicle: better or not?
I Pollentier, JU Lee, M Timmermans, C Adelmann, H Zahedmanesh, ...
Extreme Ultraviolet (EUV) Lithography VIII 10143, 125-134, 2017
Properties and performance of EUVL pellicle membranes
EE Gallagher, J Vanpaemel, I Pollentier, H Zahedmanesh, C Adelmann, ...
Photomask Technology 2015 9635, 206-213, 2015
Structure and method for detection of physical interference during transport of an article
AW Ballantine, EE Fisch, RA Warren
US Patent 6,282,459, 2001
Single exposure EUV patterning of BEOL metal layers on the IMEC iN7 platform
VMB Carballo, J Bekaert, M Mao, BK Kotowska, S Larivière, I Ciofi, ...
Extreme Ultraviolet (EUV) Lithography VIII 10143, 241-250, 2017
Impact of EUV photomask line-edge roughness on wafer prints
ZJ Qi, E Gallagher, Y Negishi, G McIntyre, A Zweber, T Senna, ...
Photomask Technology 2012 8522, 666-673, 2012
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