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Abhinay Sandupatla
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Investigation of self-heating effect on DC and RF performances in AlGaN/GaN HEMTs on CVD-diamond
K Ranjan, S Arulkumaran, GI Ng, A Sandupatla
IEEE Journal of the Electron Devices Society 7, 1264-1269, 2019
102019
GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates
A Sandupatla, S Arulkumaran, GI Ng, K Ranjan, M Deki, S Nitta, Y Honda, ...
Aip Advances 9 (4), 045007, 2019
102019
Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors
A Sandupatla, S Arulkumaran, N Geok, S Nitta, J Kennedy, H Amano
Micromachines 11 (5), 519, 2020
72020
Low voltage high-energy α-particle detectors by GaN-on-GaN Schottky diodes with record-high charge collection efficiency
A Sandupatla, S Arulkumaran, K Ranjan, GI Ng, PP Murmu, J Kennedy, ...
Sensors 19 (23), 5107, 2019
62019
Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate
M Whiteside, S Arulkumaran, Y Dikme, A Sandupatla, GI Ng
Electronics 9 (11), 1858, 2020
52020
Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer
S Abhinay, S Arulkumaran, GI Ng, K Ranjan, M Deki, S Nitta, Y Honda, ...
Japanese Journal of Applied Physics 59 (1), 010906, 2020
42020
Improved interface state density by low temperature epitaxy grown AlN for AlGaN/GaN metal-insulator-semiconductor diodes
M Whiteside, S Arulkumaran, Y Dikme, A Sandupatla, GI Ng
Materials Science and Engineering: B 262, 114707, 2020
32020
Semiconductor cylinder fiber laser
A Sandupatla, J Flattery, P Kornreich
Optical Engineering 54 (12), 126113, 2015
32015
Change of high-voltage conduction mechanism in vertical GaN–on–GaN Schottky diodes at elevated temperatures
A Sandupatla, S Arulkumaran, GI Ng, K Ranjan, M Deki, S Nitta, Y Honda, ...
Applied Physics Express 13 (7), 074001, 2020
22020
Low Static and Dynamic On‐Resistance with High Figure of Merit in AlGaN/GaN High Electron Mobility Transistors on Chemical Vapor Deposited Diamond
K Ranjan, A Sandupatla, S Arulkumaran, GI Ng
physica status solidi (a) 217 (7), 1900815, 2020
12020
Effects of Drift Layer Thicknesses in Reverse Conduction Mechanism on Vertical GaN-on-GaN SBDs grown by MOCVD
S Abhinay, S Arulkumaran, GI Ng, K Ranjan, M Deki, S Nitta, Y Honda, ...
2019 Electron Devices Technology and Manufacturing Conference (EDTM), 106-108, 2019
12019
Effect of GaN drift-layer thicknesses in vertical Schottky Barrier Diodes on free-standing GaN substrates
S Abhinay, S Arulkumaran, GI Ng, K Ranjan, M Deki, S Nitta, H Amano
SSDM, Tokyo Jp, 2018
12018
Low interface trap density in AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors on CVD-Diamond
K Ranjan, S Arulkumaran, GI Ng, A Sandupatla
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020
2020
Low leakage Mg-compensated GaN Schottky diodes on free-standing GaN substrate for high energy -particle detection
A Sandupatla, S Arulkumaran, K Ranjan, GI Ng, PP Murumu, J Kennedy, ...
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020
2020
Fiber Waveguide Laser
A Sandupatla
LAP Lambert Academic Publication 1, 64, 2015
2015
Indium Telluride Cylinder Fiber Laser
A Sandupatla
Syracuse University, 2014
2014
Studies of GaN‑on‑GaN vertical Schottky diodes for radiation sensing applications
A Sandupatla
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Artigos 1–17