Investigation of self-heating effect on DC and RF performances in AlGaN/GaN HEMTs on CVD-diamond K Ranjan, S Arulkumaran, GI Ng, A Sandupatla
IEEE Journal of the Electron Devices Society 7, 1264-1269, 2019
27 2019 Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors A Sandupatla, S Arulkumaran, NG Ing, S Nitta, J Kennedy, H Amano
Micromachines 11 (5), 519, 2020
19 2020 GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates A Sandupatla, S Arulkumaran, GI Ng, K Ranjan, M Deki, S Nitta, Y Honda, ...
Aip Advances 9 (4), 2019
12 2019 Low voltage high-energy α-particle detectors by GaN-on-GaN Schottky diodes with record-high charge collection efficiency A Sandupatla, S Arulkumaran, K Ranjan, GI Ng, PP Murmu, J Kennedy, ...
Sensors 19 (23), 5107, 2019
10 2019 Improved interface state density by low temperature epitaxy grown AlN for AlGaN/GaN metal-insulator-semiconductor diodes M Whiteside, S Arulkumaran, Y Dikme, A Sandupatla, GI Ng
Materials Science and Engineering: B 262, 114707, 2020
8 2020 Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate M Whiteside, S Arulkumaran, Y Dikme, A Sandupatla, GI Ng
Electronics 9 (11), 1858, 2020
8 2020 Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer S Abhinay, S Arulkumaran, GI Ng, K Ranjan, M Deki, S Nitta, Y Honda, ...
Japanese Journal of Applied Physics 59 (1), 010906, 2020
6 2020 Comprehensive investigations of HBM ESD robustness for GaN-on-Si RF HEMTs S Abhinay, WM Wu, CA Shih, SH Chen, A Sibaja-Hernandez, B Parvais, ...
2022 International Electron Devices Meeting (IEDM), 30.7. 1-30.7. 4, 2022
3 2022 Change of high-voltage conduction mechanism in vertical GaN–on–GaN Schottky diodes at elevated temperatures A Sandupatla, S Arulkumaran, GI Ng, K Ranjan, M Deki, S Nitta, Y Honda, ...
Applied Physics Express 13 (7), 074001, 2020
3 2020 Semiconductor cylinder fiber laser A Sandupatla, J Flattery, P Kornreich
Optical Engineering 54 (12), 126113-126113, 2015
3 2015 Effects of drift layer thicknesses in reverse conduction mechanism on vertical GaN-on-GaN SBDs grown by MOCVD S Abhinay, S Arulkumaran, GI Ng, K Ranjan, M Deki, S Nitta, Y Honda, ...
2019 Electron Devices Technology and Manufacturing Conference (EDTM), 106-108, 2019
2 2019 Low interface trap density in AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors on CVD-Diamond K Ranjan, S Arulkumaran, GI Ng, A Sandupatla
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020
1 2020 Low Static and Dynamic On‐Resistance with High Figure of Merit in AlGaN/GaN High Electron Mobility Transistors on Chemical Vapor Deposited Diamond K Ranjan, A Sandupatla, S Arulkumaran, GI Ng
physica status solidi (a) 217 (7), 1900815, 2020
1 2020 Effect of GaN drift layer thickness in vertical Schottky Barrier Diodes on freestanding GaN substrates S Abhinay, S Arulkumaran, GI Ng, K Ranjan, M Deki, S Nitta, H Amano
SSDM, Tokyo Jp, 2018
1 2018 Solutions To Improve HBM ESD Robustness of GaN RF HEMTs A Sandupatla, SH Chen, N Mane, B Parvais, H Yu, N Pradhan, N Collaert
2023 45th Annual EOS/ESD Symposium (EOS/ESD), 1-6, 2023
2023 Comprehensive Investigations of HBM ESD Robustness for GaN-on-Si RF HEMTs A Sandupatla, WM Wu, CA Shih, SH Chen, A Sibaja-Hernandez, ...
IEEE, 2022
2022 Low leakage Mg-compensated GaN Schottky diodes on free-standing GaN substrate for high energy -particle detection A Sandupatla, S Arulkumaran, K Ranjan, GI Ng, PP Murumu, J Kennedy, ...
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020
2020 GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates M Deki, S Nitta, Y Honda, H Amano, A Sandupatla, S Arulkumaran, GI Ng, ...
2019 Studies of GaN-on-GaN vertical Schottky diodes for radiation sensing applications A Sandupatla
Nanyang Technological University, 2019
2019 Fiber Waveguide Laser A Sandupatla
LAP Lambert Academic Publication 1, 64, 2015
2015