Investigation of self-heating effect on DC and RF performances in AlGaN/GaN HEMTs on CVD-diamond K Ranjan, S Arulkumaran, GI Ng, A Sandupatla
IEEE Journal of the Electron Devices Society 7, 1264-1269, 2019
10 2019 GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates A Sandupatla, S Arulkumaran, GI Ng, K Ranjan, M Deki, S Nitta, Y Honda, ...
Aip Advances 9 (4), 045007, 2019
10 2019 Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors A Sandupatla, S Arulkumaran, N Geok, S Nitta, J Kennedy, H Amano
Micromachines 11 (5), 519, 2020
7 2020 Low voltage high-energy α-particle detectors by GaN-on-GaN Schottky diodes with record-high charge collection efficiency A Sandupatla, S Arulkumaran, K Ranjan, GI Ng, PP Murmu, J Kennedy, ...
Sensors 19 (23), 5107, 2019
6 2019 Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate M Whiteside, S Arulkumaran, Y Dikme, A Sandupatla, GI Ng
Electronics 9 (11), 1858, 2020
5 2020 Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer S Abhinay, S Arulkumaran, GI Ng, K Ranjan, M Deki, S Nitta, Y Honda, ...
Japanese Journal of Applied Physics 59 (1), 010906, 2020
4 2020 Improved interface state density by low temperature epitaxy grown AlN for AlGaN/GaN metal-insulator-semiconductor diodes M Whiteside, S Arulkumaran, Y Dikme, A Sandupatla, GI Ng
Materials Science and Engineering: B 262, 114707, 2020
3 2020 Semiconductor cylinder fiber laser A Sandupatla, J Flattery, P Kornreich
Optical Engineering 54 (12), 126113, 2015
3 2015 Change of high-voltage conduction mechanism in vertical GaN–on–GaN Schottky diodes at elevated temperatures A Sandupatla, S Arulkumaran, GI Ng, K Ranjan, M Deki, S Nitta, Y Honda, ...
Applied Physics Express 13 (7), 074001, 2020
2 2020 Low Static and Dynamic On‐Resistance with High Figure of Merit in AlGaN/GaN High Electron Mobility Transistors on Chemical Vapor Deposited Diamond K Ranjan, A Sandupatla, S Arulkumaran, GI Ng
physica status solidi (a) 217 (7), 1900815, 2020
1 2020 Effects of Drift Layer Thicknesses in Reverse Conduction Mechanism on Vertical GaN-on-GaN SBDs grown by MOCVD S Abhinay, S Arulkumaran, GI Ng, K Ranjan, M Deki, S Nitta, Y Honda, ...
2019 Electron Devices Technology and Manufacturing Conference (EDTM), 106-108, 2019
1 2019 Effect of GaN drift-layer thicknesses in vertical Schottky Barrier Diodes on free-standing GaN substrates S Abhinay, S Arulkumaran, GI Ng, K Ranjan, M Deki, S Nitta, H Amano
SSDM, Tokyo Jp, 2018
1 2018 Low interface trap density in AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors on CVD-Diamond K Ranjan, S Arulkumaran, GI Ng, A Sandupatla
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020
2020 Low leakage Mg-compensated GaN Schottky diodes on free-standing GaN substrate for high energy A Sandupatla, S Arulkumaran, K Ranjan, GI Ng, PP Murumu, J Kennedy, ...
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020
2020 Fiber Waveguide Laser A Sandupatla
LAP Lambert Academic Publication 1, 64, 2015
2015 Indium Telluride Cylinder Fiber Laser A Sandupatla
Syracuse University, 2014
2014 Studies of GaN‑on‑GaN vertical Schottky diodes for radiation sensing applications A Sandupatla
Subramaniam ArulkumaranTemasek Laboratories@NTU, Nanyang Technological UniversityE-mail confirmado em ntu.edu.sg
