Bipolar and Unipolar Resistive Switching in Cu-Doped C Schindler, SCP Thermadam, R Waser, MN Kozicki
IEEE Transactions on Electron Devices 54 (10), 2762-2768, 2007
489 2007 Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories C Schindler, G Staikov, R Waser
Applied physics letters 94 (7), 2009
360 2009 Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems X Guo, C Schindler, S Menzel, R Waser
Applied Physics Letters 91 (13), 2007
289 2007 Low current resistive switching in Cu–SiO2 cells C Schindler, M Weides, MN Kozicki, R Waser
Applied Physics Letters 92 (12), 2008
237 2008 Fully inkjet printed flexible resistive memory B Huber, PB Popp, M Kaiser, A Ruediger, C Schindler
Applied Physics Letters 110 (14), 2017
76 2017 Resistive switching in Ag-Ge-Se with extremely low write currents C Schindler, M Meier, R Waser, MN Kozicki
2007 Non-Volatile Memory Technology Symposium, 82-85, 2007
72 2007 Memory devices: Energy–space–time tradeoffs VV Zhirnov, RK Cavin, S Menzel, E Linn, S Schmelzer, D Bräuhaus, ...
Proceedings of the IEEE 98 (12), 2185-2200, 2010
69 2010 Faradaic currents during electroforming of resistively switching Ag–Ge–Se type electrochemical metallization memory cells C Schindler, I Valov, R Waser
Physical Chemistry Chemical Physics 11 (28), 5974-5979, 2009
52 2009 Resistive switching in electrochemical metallization memory cells C Schindler
Aachen, Techn. Hochsch., Diss., 2009, 2009
46 2009 Low-Tc Josephson junctions with tailored barrier M Weides, C Schindler, H Kohlstedt
Journal of applied physics 101 (6), 2007
42 2007 Resistively switching Pt/spin-on glass/Ag nanocells for non-volatile memories fabricated with UV nanoimprint lithography M Meier, S Gilles, R Rosezin, C Schindler, S Trellenkamp, A Rüdiger, ...
Microelectronic engineering 86 (4-6), 1060-1062, 2009
40 2009 Controlled local filament growth and dissolution in Ag–Ge–Se C Schindler, K Szot, S Karthäuser, R Waser
physica status solidi (RRL)–Rapid Research Letters 2 (3), 129-131, 2008
38 2008 A nonvolatile memory with resistively switching methyl-silsesquioxane M Meier, C Schindler, S Gilles, R Rosezin, A Rudiger, C Kugeler, R Waser
IEEE electron device letters 30 (1), 8-10, 2008
36 2008 Radiofrequency sputter deposition of germanium–selenide thin films for resistive switching D Bräuhaus, C Schindler, U Böttger, R Waser
Thin Solid Films 516 (6), 1223-1226, 2008
32 2008 Novel post‐process for the passivation of a CMOS biosensor M Schindler, SK Kim, CS Hwang, C Schindler, A Offenhäusser, ...
physica status solidi (RRL)–Rapid Research Letters 2 (1), 4-6, 2008
32 2008 Resistive Switching in Ge0.3 Se0.7 Films by Means of Copper Ion Migration C Schindler, X Guo, A Besmehn, R Waser
Zeitschrift für physikalische Chemie 221 (11-12), 1469-1478, 2007
20 2007 CMOS Compatible Hf0.5 Zr0.5 O2 Ferroelectric Tunnel Junctions for Neuromorphic Devices B Mittermeier, A Dörfler, A Horoschenkoff, R Katoch, C Schindler, ...
Advanced Intelligent Systems 1 (5), 1900034, 2019
19 2019 Electron Devices C Schindler, SCP Thermadam, R Waser, MN Kozicki
IEEE Transactions on 54 (10), 2762-2768, 2007
19 2007 Fully inkjet-printed carbon nanotube-PDMS-based strain sensor: Temperature response, compressive and tensile bending properties, and fatigue investigations J Jehn, P Oser, MAM Courrau, M Kaiser, D Wu, CU Grosse, ...
IEEE Access 9, 72207-72216, 2021
12 2021 Fiber‐optic photoacoustic generator realized by inkjet‐printing of CNT‐PDMS composites on fiber end faces P Oser, J Jehn, M Kaiser, O Düttmann, F Schmid, L Schulte‐Spechtel, ...
Macromolecular Materials and Engineering 306 (2), 2000563, 2021
12 2021 