Nirupam Hatui
Nirupam Hatui
E-mail confirmado em ucsb.edu
Título
Citado por
Citado por
Ano
MOVPE growth of semipolar III-nitride semiconductors on CVD graphene
P Gupta, AA Rahman, N Hatui, MR Gokhale, MM Deshmukh, ...
Journal of crystal growth 372, 105-108, 2013
732013
Distorted wurtzite unit cells: Determination of lattice parameters of nonpolar -plane AlGaN and estimation of solid phase Al content
MR Laskar, T Ganguli, AA Rahman, A Mukherjee, N Hatui, MR Gokhale, ...
Journal of Applied Physics 109 (1), 013107, 2011
512011
The mechanism of Ni-assisted GaN nanowire growth
CB Maliakkal, N Hatui, RD Bapat, BA Chalke, AA Rahman, ...
Nano letters 16 (12), 7632-7638, 2016
352016
Determination of lattice parameters, strain state and composition in semipolar III-nitrides using high resolution X-ray diffraction
M Frentrup, N Hatui, T Wernicke, J Stellmach, A Bhattacharya, M Kneissl
Journal of Applied Physics 114 (21), 213509, 2013
322013
First demonstration of AlSiO as gate dielectric in GaN FETs; applied to a high performance OG-FET
C Gupta, SH Chan, A Agarwal, N Hatui, S Keller, UK Mishra
IEEE Electron Device Letters 38 (11), 1575-1578, 2017
242017
W-band power performance of SiN-passivated N-polar GaN deep recess HEMTs
B Romanczyk, X Zheng, M Guidry, H Li, N Hatui, C Wurm, A Krishna, ...
IEEE Electron Device Letters 41 (3), 349-352, 2020
232020
Free-standing semipolar III-nitride quantum well structures grown on chemical vapor deposited graphene layers
P Gupta, AA Rahman, N Hatui, JB Parmar, BA Chalke, RD Bapat, ...
Applied Physics Letters 103 (18), 181108, 2013
212013
Anisotropic structural and optical properties of -plane AlInN nearly-lattice-matched to GaN
MR Laskar, T Ganguli, AA Rahman, A Arora, N Hatui, MR Gokhale, ...
Applied Physics Letters 98 (18), 181108, 2011
162011
High-resolution X-ray diffraction investigations of the microstructure of MOVPE grown a-plane AlGaN epilayers
MR Laskar, T Ganguli, N Hatui, AA Rahman, MR Gokhale, A Bhattacharya
Journal of crystal growth 315 (1), 208-210, 2011
162011
MOVPE growth of semipolar (11-22) Al(1− x)In(x)N across the alloy composition range (0≤ x≤ 0.55)
N Hatui, M Frentrup, AA Rahman, A Kadir, S Subramanian, M Kneissl, ...
Journal of Crystal Growth 411, 106-109, 2015
152015
Influence of buffer layers on the microstructure of MOVPE grown a-plane InN
MR Laskar, T Ganguli, A Kadir, N Hatui, AA Rahman, AP Shah, ...
Journal of crystal growth 315 (1), 233-237, 2011
132011
Demonstration of a GaN/AlGaN superlattice-based p-channel FinFET with high ON-current
A Raj, A Krishna, N Hatui, C Gupta, R Jang, S Keller, UK Mishra
IEEE Electron Device Letters 41 (2), 220-223, 2020
112020
Direct MOVPE growth of semipolar (11-22) Al(x)Ga(1− x)N across the alloy composition range
N Hatui, AA Rahman, CB Maliakkal, A Bhattacharya
Journal of Crystal Growth 437, 1-5, 2016
112016
High linearity and high gain performance of N-polar GaN MIS-HEMT at 30 GHz
P Shrestha, M Guidry, B Romanczyk, N Hatui, C Wurm, A Krishna, ...
IEEE Electron Device Letters 41 (5), 681-684, 2020
102020
Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates
C Lund, K Hestroffer, N Hatui, S Nakamura, SP DenBaars, UK Mishra, ...
Applied Physics Express 10 (11), 111001, 2017
102017
Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors
A Krishna, A Raj, N Hatui, S Keller, UK Mishra
Applied Physics Letters 115 (17), 172105, 2019
82019
Optimization of a-plane (112¯ 0) InN grown via MOVPE on a-plane GaN buffer layers on r-plane (11¯ 02) sapphire
MR Laskar, A Kadir, AA Rahman, AP Shah, N Hatui, MR Gokhale, ...
Journal of crystal growth 312 (14), 2033-2037, 2010
72010
Fabrication and characterization of GaN nanowire doubly clamped resonators
CB Maliakkal, JP Mathew, N Hatui, AA Rahman, MM Deshmukh, ...
Journal of Applied Physics 118 (11), 114301, 2015
62015
Comparison of GaN nanowires grown on c-, r-and m-plane sapphire substrates
CB Maliakkal, AA Rahman, N Hatui, BA Chalke, RD Bapat, ...
Journal of Crystal Growth 439, 47-53, 2016
52016
N-Polar GaN-on-Sapphire Deep Recess HEMTs With High W-Band Power Density
B Romanczyk, W Li, M Guidry, N Hatui, A Krishna, C Wurm, S Keller, ...
IEEE Electron Device Letters 41 (11), 1633-1636, 2020
32020
O sistema não pode executar a operação agora. Tente novamente mais tarde.
Artigos 1–20