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Bin Sun
Bin Sun
Institute of Semiconductor Electronics, RWTH Aachen University
Verified email at rwth-aachen.de
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Cited by
Year
On the operation modes of dual-gate reconfigurable nanowire transistors
B Sun, B Richstein, P Liebisch, T Frahm, S Scholz, J Trommer, ...
IEEE Transactions on Electron Devices 68 (7), 3684-3689, 2021
162021
Alternatives for Doping in Nanoscale Field‐Effect Transistors
F Riederer, T Grap, S Fischer, MR Mueller, D Yamaoka, B Sun, C Gupta, ...
physica status solidi (a) 215 (7), 1700969, 2018
142018
Spin Qubits Confined to a Silicon Nano-Ridge
J Klos, B Sun, J Beyer, S Kindel, L Hellmich, J Knoch, LR Schreiber
Applied Sciences 9 (18), 3823, 2019
62019
Sub-linear current voltage characteristics of Schottky-barrier field-effect transistors
J Knoch, B Sun
IEEE Transactions on Electron Devices 69 (5), 2243-2247, 2022
42022
Role of electron and ion irradiation in a reliable lift-off process with electron beam evaporation and a bilayer PMMA resist system
B Sun, T Grap, T Frahm, S Scholz, J Knoch
Journal of Vacuum Science & Technology B 39 (5), 052601, 2021
42021
Modeling and prediction of hydrogen-assisted morphological evolution in silicon utilizing a level-set approach
B Sun, SC Scholz, A Kemper, T Grap, J Knoch
Journal of Microelectromechanical Systems 30 (6), 950-957, 2021
22021
Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems
T Frahm, M Buttberg, G Gvozdev, RA Müller, S Chen, B Sun, L Raffauf, ...
IEEE journal of the Electron Devices Society, 2023
2023
Employing CMOS technology on silicon for a scalable electron-spin qubit architecture
J Klos, B Sun, J Beyer, S Kindel, L Hellmich, J Knoch, L Schreiber
APS March Meeting Abstracts 2021, A30. 004, 2021
2021
Fabrication and Characterization of Pseudo-MOSFETs
B Sun, J Klos, T Grap
2017
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