Strong evidence for d -electron spin transport at room temperature at a LaAlO3 /SrTiO3 interface R Ohshima, Y Ando, K Matsuzaki, T Susaki, M Weiler, S Klingler, H Huebl, ...
Nature Materials 16 (6), 609-614, 2017
67 2017 Giant spin Hall angle in the Heusler alloy Weyl ferromagnet L Leiva, S Granville, Y Zhang, S Dushenko, E Shigematsu, T Shinjo, ...
Physical Review B 103 (4), L041114, 2021
55 2021 Transport and spin conversion of multicarriers in semimetal bismuth H Emoto, Y Ando, G Eguchi, R Ohshima, E Shikoh, Y Fuseya, T Shinjo, ...
Physical Review B 93 (17), 174428, 2016
54 2016 Quantitative investigation of the inverse Rashba-Edelstein effect in Bi/Ag and Ag/Bi on YIG M Matsushima, Y Ando, S Dushenko, R Ohshima, R Kumamoto, T Shinjo, ...
Applied Physics Letters 110 (7), 2017
35 2017 Note: Derivative divide, a method for the analysis of broadband ferromagnetic resonance in the frequency domain H Maier-Flaig, STB Goennenwein, R Ohshima, M Shiraishi, R Gross, ...
Review of Scientific Instruments 89 (7), 2018
29 2018 Observation of spin-charge conversion in chemical-vapor-deposition-grown single-layer graphene R Ohshima, A Sakai, Y Ando, T Shinjo, K Kawahara, H Ago, M Shiraishi
Applied Physics Letters 105 (16), 2014
29 2014 Significant reduction in spin pumping efficiency in a platinum/yttrium iron garnet bilayer at low temperature E Shigematsu, Y Ando, R Ohshima, S Dushenko, Y Higuchi, T Shinjo, ...
Applied Physics Express 9 (5), 053002, 2016
25 2016 Quantitative and systematic analysis of bias dependence of spin accumulation voltage in a nondegenerate Si-based spin valve S Lee, F Rortais, R Ohshima, Y Ando, S Miwa, Y Suzuki, H Koike, ...
Physical Review B 99 (6), 064408, 2019
22 2019 Synthetic Rashba spin–orbit system using a silicon metal-oxide semiconductor S Lee, H Koike, M Goto, S Miwa, Y Suzuki, N Yamashita, R Ohshima, ...
Nature Materials 20 (9), 1228-1232, 2021
19 2021 Gate-Tunable Spin xor Operation in a Silicon-Based Device at Room Temperature R Ishihara, Y Ando, S Lee, R Ohshima, M Goto, S Miwa, Y Suzuki, ...
Physical Review Applied 13 (4), 044010, 2020
17 2020 Spin-orbit coupling induced by bismuth doping in silicon thin films F Rortais, S Lee, R Ohshima, S Dushenko, Y Ando, M Shiraishi
Applied Physics Letters 113 (12), 2018
14 2018 Investigation of gating effect in Si spin MOSFET S Lee, F Rortais, R Ohshima, Y Ando, M Goto, S Miwa, Y Suzuki, H Koike, ...
Applied Physics Letters 116 (2), 2020
12 2020 Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts S Gupta, F Rortais, R Ohshima, Y Ando, T Endo, Y Miyata, M Shiraishi
Scientific Reports 9 (1), 17032, 2019
12 2019 In-plane spin-orbit torque magnetization switching and its detection using the spin rectification effect at subgigahertz frequencies M Aoki, E Shigematsu, M Matsushima, R Ohshima, S Honda, T Shinjo, ...
Physical Review B 102 (17), 174442, 2020
11 2020 Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves H Koike, S Lee, R Ohshima, E Shigematsu, M Goto, S Miwa, Y Suzuki, ...
Applied Physics Express 13 (8), 083002, 2020
11 2020 Spin injection into silicon detected by broadband ferromagnetic resonance spectroscopy R Ohshima, S Klingler, S Dushenko, Y Ando, M Weiler, H Huebl, T Shinjo, ...
Applied Physics Letters 110 (18), 2017
11 2017 Efficient room-temperature magnetization direction detection by means of the enhanced anomalous Nernst effect in a Weyl ferromagnet L Leiva, S Granville, Y Zhang, S Dushenko, E Shigematsu, R Ohshima, ...
Physical Review Materials 6 (6), 064201, 2022
10 2022 Approaching barrier-free contacts to monolayer MoS2 employing [Co/Pt] multilayer electrodes S Gupta, F Rortais, R Ohshima, Y Ando, T Endo, Y Miyata, M Shiraishi
NPG Asia Materials 13 (1), 13, 2021
8 2021 Detection of ferromagnetic resonance from 1 nm-thick Co S Yoshii, R Ohshima, Y Ando, T Shinjo, M Shiraishi
Scientific Reports 10 (1), 15764, 2020
8 2020 Sizable spin-transfer torque in the Bi/Ni80Fe20 bilayer film M Matsushima, S Miwa, S Sakamoto, T Shinjo, R Ohshima, Y Ando, ...
Applied Physics Letters 117 (4), 2020
7 2020 
Masashi ShiraishiKyoto UniversityE-mail confirmado em kuee.kyoto-u.ac.jp
