Rui Dong
Rui Dong
Saint Louis University, UNL, Georgia Tech, UCLA, GIST, SIC-CAS
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Citado por
High‐Gain and Low‐Driving‐Voltage Photodetectors Based on Organolead Triiodide Perovskites
R Dong, Y Fang, J Chae, J Dai, Z Xiao, Q Dong, Y Yuan, A Centrone, ...
Advanced Materials 27 (11), 1912-1918, 2015
Effect of carrier trapping on the hysteretic current-voltage characteristics in Ag∕ La 0.7 Ca 0.3 MnO 3∕ Pt heterostructures
DS Shang, Q Wang, LD Chen, R Dong, XM Li, WQ Zhang
Physical Review B 73 (24), 245427, 2006
Reproducible hysteresis and resistive switching in metal--metal heterostructures
R Dong, DS Lee, WF Xiang, SJ Oh, DJ Seong, SH Heo, HJ Choi, ...
Applied physics letters 90 (4), 042107, 2007
Resistance switching of copper doped films for nonvolatile memory applications
D Lee, D Seong, I Jo, F Xiang, R Dong, S Oh, H Hwang
Applied Physics Letters 90 (12), 122104, 2007
Record Maximum Oscillation Frequency in C-face Epitaxial Graphene Transistors
Z Guo, R Dong, PS Chakraborty, N Lourenco, J Palmer, Y Hu, M Ruan, ...
Nano letters, 2013
An Ultraviolet‐to‐NIR Broad Spectral Nanocomposite Photodetector with Gain
R Dong, C Bi, Q Dong, F Guo, Y Yuan, Y Fang, Z Xiao, J Huang
Advanced Optical Materials 2 (6), 549-554, 2014
Uniform resistive switching with a thin reactive metal interface layer in metal--metal heterostructures
M Hasan, R Dong, HJ Choi, DS Lee, DJ Seong, MB Pyun, H Hwang
Applied Physics Letters 92 (20), 202102, 2008
Retention behavior of the electric-pulse-induced reversible resistance change effect in sandwiches
R Dong, Q Wang, LD Chen, DS Shang, TL Chen, XM Li, WQ Zhang
Applied Physics Letters 86 (17), 172107, 2005
Excellent uniformity and reproducible resistance switching characteristics of doped binary metal oxides for non-volatile resistance memory applications
D Lee, D Seong, H jung Choi, I Jo, R Dong, W Xiang, S Oh, M Pyun, ...
2006 International Electron Devices Meeting, 1-4, 2006
Epitaxial graphene on silicon carbide: Introduction to structured graphene
M Ruan, Y Hu, Z Guo, R Dong, J Palmer, J Hankinson, C Berger, ...
Mrs Bulletin 37 (12), 1138-1147, 2012
Improvement of reproducible hysteresis and resistive switching in metal--metal heterostructures by oxygen annealing
R Dong, WF Xiang, DS Lee, SJ Oh, DJ Seong, SH Heo, HJ Choi, ...
Applied physics letters 90 (18), 182118, 2007
Structured epitaxial graphene: growth and properties
Y Hu, M Ruan, Z Guo, R Dong, J Palmer, J Hankinson, C Berger, ...
Journal of Physics D: Applied Physics 45 (15), 154010, 2012
Progress in fabrication of transition metal dichalcogenides heterostructure systems
R Dong, I Kuljanishvili
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2017
Mechanism of current hysteresis in reduced rutile TiO 2 crystals for resistive memory
R Dong, DS Lee, MB Pyun, M Hasan, HJ Choi, MS Jo, DJ Seong, ...
Applied Physics A 93 (2), 409-414, 2008
Electrical and reliability characteristics of copper-doped carbon (CuC) based resistive switching devices for nonvolatile memory applications
M Pyun, H Choi, JB Park, D Lee, M Hasan, R Dong, SJ Jung, J Lee, ...
Applied Physics Letters 93 (21), 212907, 2008
Nanoscale resistive switching of a copper–carbon-mixed layer for nonvolatile memory applications
H Choi, M Pyun, TW Kim, M Hasan, R Dong, J Lee, JB Park, J Yoon, ...
IEEE electron device letters 30 (3), 302-304, 2009
A materials approach to resistive switching memory oxides
M Hasan, R Dong, DS Lee, DJ Seong, HJ Choi, MB Pyun, H Hwang
JSTS: Journal of Semiconductor Technology and Science 8 (1), 66-79, 2008
Heteroepitaxial growth of Nb-doped films on Si substrates by pulsed laser deposition for resistance memory applications
W Xiang, R Dong, D Lee, S Oh, D Seong, H Hwang
Applied physics letters 90 (5), 052110, 2007
Dependence of the Metal Electrode and Improved Pulse Switching Speed of La0. 7Ca0. 3MnO3 as a Resistance Change Memory Device
M Hasan, R Dong, H Choi, J Yoon, J Park, D Seong, H Hwang
Journal of the Electrochemical Society 156 (4), H239, 2009
董睿, 姜继森, 杨燮龙
无机材料学报 17 (005), 967-972, 2002
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