Gate-tunable superconducting diode effect in a three-terminal Josephson device M Gupta, GV Graziano, M Pendharkar, JT Dong, CP Dempsey, ...
Nature communications 14 (1), 3078, 2023
71 * 2023 Selective control of conductance modes in multi-terminal Josephson junctions GV Graziano, M Gupta, M Pendharkar, JT Dong, CP Dempsey, ...
Nature communications 13 (1), 5933, 2022
24 2022 Charge Separation in Epitaxial SnS/MoS2 Vertical Heterojunctions Grown by Low-Temperature Pulsed MOCVD JN Olding, A Henning, JT Dong, Q Zhou, MJ Moody, PJM Smeets, ...
ACS Applied Materials & Interfaces 11 (43), 40543-40550, 2019
22 2019 Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films HS Inbar, DQ Ho, S Chatterjee, M Pendharkar, AN Engel, JT Dong, ...
Physical Review Materials 6 (12), L121201, 2022
10 2022 Strain-Energy release in bent semiconductor nanowires occurring by polygonization or nanocrack formation Z Sun, C Huang, J Guo, JT Dong, RF Klie, LJ Lauhon, DN Seidman
ACS nano 13 (3), 3730-3738, 2019
10 2019 Large second-order Josephson effect in planar superconductor-semiconductor junctions P Zhang, A Zarassi, L Jarjat, V Van de Sande, M Pendharkar, JS Lee, ...
SciPost Physics 16 (1), 030, 2024
6 2024 Iterative design of a high zT thermoelectric material AH Adekoya, Y Zhang, M Peters, J Male, Y Chart, J Dong, R Franks, ...
Applied Physics Letters 119 (20), 2021
5 2021 Electronic structure of InSb (001),(110), and (111) B surfaces JT Dong, HS Inbar, M Pendharkar, TAJ van Schijndel, EC Young, ...
Journal of Vacuum Science & Technology B 41 (3), 2023
4 2023 Towards merged-element transmons using silicon fins: The FinMET A Goswami, AP McFadden, T Zhao, H Inbar, JT Dong, R Zhao, ...
Applied Physics Letters 121 (6), 2022
4 2022 Missing odd-order Shapiro steps do not uniquely indicate fractional Josephson effect P Zhang, S Mudi, M Pendharkar, JS Lee, CP Dempsey, AP McFadden, ...
arXiv preprint arXiv:2211.08710, 2022
3 2022 Planar josephson junctions templated by nanowire shadowing P Zhang, A Zarassi, M Pendharkar, JS Lee, L Jarjat, V Van de Sande, ...
arXiv preprint arXiv:2211.04130, 2022
3 2022 Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: The case of topological half-Heusler S Chatterjee, FC de Lima, JA Logan, Y Fang, H Inbar, A Goswami, ...
Physical Review Materials 5 (12), 124207, 2021
3 2021 Erratum:“Electronic structure of InSb (001),(110), and (111) B surfaces”[J. Vac. Sci. Technol. B 41, 032808 (2023)] JT Dong, HS Inbar, M Pendharkar, TAJ van Schijndel, EC Young, ...
Journal of Vacuum Science & Technology B 41 (5), 2023
1 2023 Inversion symmetry breaking in epitaxial ultrathin bi (111) films HS Inbar, M Zubair, JT Dong, AN Engel, CP Dempsey, YH Chang, ...
arXiv preprint arXiv:2302.00803, 2023
1 2023 Molecular beam epitaxy growth of ferromagnetic MnSb on InGaSb: Characterization of orientation, interfaces, and magnetic properties C Dempsey, J Dong, H Inbar, A Engel, A Goswami, YH Chang, ...
APS March Meeting Abstracts 2022, W12. 002, 2022
1 2022 Growth and characterization of -Sn thin films on In- and Sb-rich reconstructions of InSb(001) AN Engel, CP Dempsey, HS Inbar, JT Dong, S Nishihaya, Y Chang, ...
Physical Review Materials 8 (4), 044202, 2024
2024 Enhanced mobility of ternary InGaAs quantum wells through digital alloying JT Dong, Y Gul, AN Engel, TAJ van Schijndel, CP Dempsey, M Pepper, ...
arXiv preprint arXiv:2403.17166, 2024
2024 Strain Solitons in an Epitaxially Strained van der Waals-like Material JT Dong, HS Inbar, CP Dempsey, AN Engel, CJ Palmstrøm
Nano Letters 24 (15), 4493-4497, 2024
2024 Localization and Spin-orbit coupling in InGaAs digital alloy quantum wells J Dong, Y Gul, A Engel, C Dempsey, T van Schijndel, M Pepper, ...
Bulletin of the American Physical Society, 2024
2024 Low-Temperature MBE growth of superconducting Ta films on Silicon and Sapphire substrates C Palmstrom, A Engel, T van Schijndel, J Dong, A McFadden, ...
Bulletin of the American Physical Society, 2024
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