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Nethaji Dharmarasu
Nethaji Dharmarasu
Senior Research Scientist, Temasek Laboratories@NTU, Singapore
E-mail confirmado em ntu.edu.sg
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High-radiation-resistant InGaP, InGaAsP, and InGaAs solar cells for multijuction solar cells
N Dharmarasu, M Yamaguchi, A Khan, T Yamada, T Tanabe, S Takagishi, ...
Applied Physics Letters 79 (15), 2399-2401, 2001
982001
Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells
A Khan, M Yamaguchi, Y Ohshita, N Dharmarasu, K Araki, T Abe, H Itoh, ...
Journal of Applied Physics 90 (3), 1170-1178, 2001
782001
Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si (111) by plasma-assisted molecular beam epitaxy
K Radhakrishnan, N Dharmarasu, Z Sun, S Arulkumaran, GI Ng
Applied Physics Letters 97 (23), 232107, 2010
372010
Analysis for superior radiation resistance of InP-based solar cells
M Yamaguchi, A Khan, N Dharmarasu
Solar energy materials and solar cells 75 (1-2), 285-291, 2003
312003
Effects of proton irradiation on InGaP solar cells
N Dharmarasu, A Khan, M Yamaguchi, T Takamoto, T Ohshima, H Itoh, ...
Journal of applied physics 91 (5), 3306-3311, 2002
312002
Wide continuous tuning range of 221nm by InP/air-gap vertical-cavity filters
A Hasse, S Irmer, J Daleiden, N Dharmarasu, S Hansmann, H Hillmer
Electronics letters 42 (17), 974-975, 2006
302006
GaN schottky metal–semiconductor–metal UV photodetectors on Si (111) grown by ammonia-MBE
L Ravikiran, K Radhakrishnan, N Dharmarasu, M Agrawal, Z Wang, ...
IEEE Sensors Journal 17 (1), 72-77, 2016
292016
Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si (111) using ammonia-molecular beam epitaxy
L Ravikiran, N Dharmarasu, K Radhakrishnan, M Agrawal, L Yiding, ...
Journal of Applied Physics 117 (2), 025301, 2015
222015
Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si (111) by ammonia molecular beam epitaxy
N Dharmarasu, K Radhakrishnan, M Agrawal, L Ravikiran, S Arulkumaran, ...
Applied Physics Express 5 (9), 091003, 2012
222012
Majority- and minority-carrier deep level traps in proton-irradiated -InGaP space solar cells
N Dharmarasu, M Yamaguchi, JC Bourgoin, T Takamoto, T Ohshima, ...
Applied physics letters 81 (1), 64-66, 2002
202002
Low energy proton irradiation induced interface defects on Pd/n-GaAs Schottky diodes and its characteristics
N Dharmarasu, S Arulkumaran, RR Sumathi, P Jayavel, J Kumar, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1998
171998
On the enhancement of effective barrier height in Tin-GaAs Schottky barrier diodes
S Arulkumaran, J Arokiaraj, N Dharmarasu, J Kumar
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1996
171996
Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy
M Agrawal, N Dharmarasu, K Radhakrishnan, L Ravikiran
Thin Solid Films 520 (24), 7109-7114, 2012
152012
Improved electrical properties on the anodic oxide/InP interface for MOS structures
RR Sumathi, N Dharmarasu, S Arulkumaran, P Jayavel, J Kumar
Journal of electronic materials 27 (12), 1358-1361, 1998
151998
Study of current collapse by quiescent-bias-stresses in rf-plasma assisted MBE grown AlGaN/GaN high-electron-mobility transistors
S Arulkumaran, GI Ng, CH Lee, ZH Liu, K Radhakrishnan, N Dharmarasu, ...
Solid-state electronics 54 (11), 1430-1433, 2010
142010
Micromachining of InP/InGaAs multiple membrane/airgap structures for tunable optical devices
T Kusserow, S Ferwana, T Nakamura, T Hayakawa, N Dharmarasu, ...
MEMS, MOEMS, and Micromachining III 6993, 86-96, 2008
132008
Low energy ion implantation and high energy heavy ion irradiation in C60 films
KL Narayanan, M Yamaguchi, N Dharmarasu, N Kojima, D Kanjilal
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2001
132001
Investigations on H+ and He+ implantation effects in n-InP Using Raman Scattering
N Dharmarasu, B Sundarakkannan, R Kesavamoorthy, KGM Nair, ...
Physica B: Condensed Matter 262 (3-4), 329-335, 1999
131999
Raman scattering studies in H+ and He+ implanted n-GaAs
N Dharmarasu, B Sundarakkannan, R Kesavamoorthy, KGM Nair, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1998
131998
AlGaN/GaN HEMT-based high-sensitive NO2 gas sensors
A Ranjan, M Agrawal, K Radhakrishnan, N Dharmarasu
Japanese Journal of Applied Physics 58 (SC), SCCD23, 2019
112019
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