High-radiation-resistant InGaP, InGaAsP, and InGaAs solar cells for multijuction solar cells N Dharmarasu, M Yamaguchi, A Khan, T Yamada, T Tanabe, S Takagishi, ...
Applied Physics Letters 79 (15), 2399-2401, 2001
109 2001 Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells A Khan, M Yamaguchi, Y Ohshita, N Dharmarasu, K Araki, T Abe, H Itoh, ...
Journal of Applied Physics 90 (3), 1170-1178, 2001
84 2001 GaN Schottky metal–semiconductor–metal UV photodetectors on Si (111) grown by ammonia-MBE L Ravikiran, K Radhakrishnan, N Dharmarasu, M Agrawal, Z Wang, ...
IEEE Sensors Journal 17 (1), 72-77, 2016
39 2016 Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si (111) by plasma-assisted molecular beam epitaxy K Radhakrishnan, N Dharmarasu, Z Sun, S Arulkumaran, GI Ng
Applied Physics Letters 97 (23), 2010
39 2010 Effects of proton irradiation on N Dharmarasu, A Khan, M Yamaguchi, T Takamoto, T Ohshima, H Itoh, ...
Journal of applied physics 91 (5), 3306-3311, 2002
35 2002 Analysis for superior radiation resistance of InP-based solar cells M Yamaguchi, A Khan, N Dharmarasu
Solar energy materials and solar cells 75 (1-2), 285-291, 2003
34 2003 Wide continuous tuning range of 221 nm by InP/air-gap vertical-cavity filters A Hasse, S Irmer, J Daleiden, N Dharmarasu, S Hansmann, H Hillmer
Electronics letters 42 (17), 1, 2006
30 2006 Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si (111) using ammonia-molecular beam epitaxy L Ravikiran, N Dharmarasu, K Radhakrishnan, M Agrawal, L Yiding, ...
Journal of Applied Physics 117 (2), 2015
23 2015 Majority- and minority-carrier deep level traps in proton-irradiated N Dharmarasu, M Yamaguchi, JC Bourgoin, T Takamoto, T Ohshima, ...
Applied physics letters 81 (1), 64-66, 2002
23 2002 Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si (111) by ammonia molecular beam epitaxy N Dharmarasu, K Radhakrishnan, M Agrawal, L Ravikiran, S Arulkumaran, ...
Applied physics express 5 (9), 091003, 2012
22 2012 Low energy proton irradiation induced interface defects on Pd/n-GaAs Schottky diodes and its characteristics N Dharmarasu, S Arulkumaran, RR Sumathi, P Jayavel, J Kumar, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1998
21 1998 AlGaN/GaN HEMT-based high-sensitive NO2 gas sensors A Ranjan, M Agrawal, K Radhakrishnan, N Dharmarasu
Japanese Journal of Applied Physics 58 (SC), SCCD23, 2019
20 2019 Improved electrical properties on the anodic oxide/InP interface for MOS structures RR Sumathi, N Dharmarasu, S Arulkumaran, P Jayavel, J Kumar
Journal of electronic materials 27, 1358-1361, 1998
18 1998 On the enhancement of effective barrier height in Tin-GaAs Schottky barrier diodes S Arulkumaran, J Arokiaraj, N Dharmarasu, J Kumar
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1996
17 1996 Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy M Agrawal, N Dharmarasu, K Radhakrishnan, L Ravikiran
Thin Solid Films 520 (24), 7109-7114, 2012
15 2012 Enhancement of 2D Electron Gas Mobility in an AlN/GaN/AlN Double‐Heterojunction High‐Electron‐Mobility Transistor by Epilayer Stress Engineering S Patwal, M Agrawal, K Radhakrishnan, TLA Seah, N Dharmarasu
physica status solidi (a) 217 (7), 1900818, 2020
14 2020 Responsivity drop due to conductance modulation in GaN metal-semiconductor-metal Schottky based UV photodetectors on Si (111) L Ravikiran, K Radhakrishnan, N Dharmarasu, M Agrawal, Z Wang, ...
Semiconductor Science and Technology 31 (9), 095003, 2016
14 2016 Effect of III/V ratio on the polarity of AlN and GaN layers grown in the metal rich growth regime on Si (111) by plasma assisted molecular beam epitaxy M Agrawal, K Radhakrishnan, N Dharmarasu, SS Pramana
Japanese Journal of Applied Physics 54 (6), 065701, 2015
14 2015 Study of current collapse by quiescent-bias-stresses in rf-plasma assisted MBE grown AlGaN/GaN high-electron-mobility transistors S Arulkumaran, GI Ng, CH Lee, ZH Liu, K Radhakrishnan, N Dharmarasu, ...
Solid-state electronics 54 (11), 1430-1433, 2010
14 2010 Micromachining of InP/InGaAs multiple membrane/airgap structures for tunable optical devices T Kusserow, S Ferwana, T Nakamura, T Hayakawa, N Dharmarasu, ...
MEMS, MOEMS, and Micromachining III 6993, 86-96, 2008
13 2008 
K RadhakrishnanNanyang technological universityE-mail confirmado em ntu.edu.sg
