Structural characteristics and strain behavior of two-dimensional C3N: First principles calculations LB Shi, YY Zhang, XM Xiu, HK Dong Carbon 134, 103-111, 2018 | 107 | 2018 |
Equivalence of the equilibrium and the nonequilibrium molecular dynamics methods for thermal conductivity calculations: From bulk to nanowire silicon H Dong, Z Fan, L Shi, A Harju, T Ala-Nissila Physical Review B 97 (9), 094305, 2018 | 80 | 2018 |
First-principle study of structural, electronic, vibrational and magnetic properties of HCN adsorbed graphene doped with Cr, Mn and Fe LB Shi, YP Wang, HK Dong Applied Surface Science 329, 330-336, 2015 | 66 | 2015 |
Uniform multilevel switching of graphene oxide-based RRAM achieved by embedding with gold nanoparticles for image pattern recognition M Qi, S Cao, L Yang, Q You, L Shi, Z Wu Applied Physics Letters 116 (16), 2020 | 59 | 2020 |
Prediction of high carrier mobility for a novel two-dimensional semiconductor of BC 6 N: first principles calculations LB Shi, M Yang, S Cao, Q You, YJ Zhang, M Qi, KC Zhang, P Qian Journal of Materials Chemistry C 8 (17), 5882-5893, 2020 | 48 | 2020 |
Strain behavior and Carrier mobility for novel two-dimensional semiconductor of GeP: First principles calculations LB Shi, S Cao, M Yang Physica E: Low-dimensional Systems and Nanostructures 107, 124-130, 2019 | 47 | 2019 |
Theoretical prediction of intrinsic electron mobility of monolayer InSe: first-principles calculation LB Shi, S Cao, M Yang, Q You, KC Zhang, Y Bao, YJ Zhang, YY Niu, ... Journal of Physics: Condensed Matter 32 (6), 065306, 2019 | 44 | 2019 |
Elastic behavior and intrinsic carrier mobility for monolayer SnS and SnSe: First-principles calculations LB Shi, M Yang, S Cao, Q You, YY Niu, YZ Wang Applied Surface Science 492, 435-448, 2019 | 44 | 2019 |
Intrinsic carrier mobility of monolayer GeS and GeSe: First-principles calculation M Yang, S Cao, Q You, LB Shi, P Qian Physica E: Low-dimensional Systems and Nanostructures 118, 113877, 2020 | 40 | 2020 |
First principles calculations of the interface properties of a-Al2O3/MoS2 and effects of biaxial strain LB Shi, MB Li, XM Xiu, XY Liu, KC Zhang, YH Liu, CR Li, HK Dong Journal of Applied Physics 121 (20), 2017 | 34 | 2017 |
Giant magnetic anisotropy of rare-earth adatoms and dimers adsorbed by graphene oxide KC Zhang, YF Li, Y Liu, Y Zhu, LB Shi Physical Chemistry Chemical Physics 19 (20), 13245-13251, 2017 | 26 | 2017 |
A CASTEP study on magnetic properties of C-doped ZnO crystal LB Shi, CY Xu, HK Yuan Physica B: Condensed Matter 406 (17), 3187-3191, 2011 | 25 | 2011 |
Investigation of biaxial strain behavior and phonon-limited mobility for γ graphyne: First-principles calculation Y Su, S Cao, LB Shi, P Qian Journal of Applied Physics 130 (19), 2021 | 24 | 2021 |
Stability and phonon-limited mobility for CsSnI3 and CsPbI3 Y Su, KK Song, M Zhong, LB Shi, P Qian Journal of Alloys and Compounds 889, 161723, 2021 | 21 | 2021 |
Phonon-limited mobility for novel two-dimensional semiconductors of BC3 and C3N: first-principles calculation Y Su, S Cao, LB Shi, P Qian Applied Surface Science 531, 147341, 2020 | 20 | 2020 |
Impact of native defects in the high dielectric constant oxide HfSiO4 on MOS device performance HK Dong, LB Shi Chinese Physics Letters 33 (1), 016101, 2016 | 19 | 2016 |
First principles study of HCN adsorption on graphene doped with 5d transition metal HK Dong, YP Wang, LB Shi Surface Review and Letters 23 (01), 1550095, 2016 | 17 | 2016 |
First-principles study of the magnetic properties of Zn-doped SnO2 LB Shi, GQ Qi, HK Dong Materials science in semiconductor processing 16 (3), 877-883, 2013 | 16 | 2013 |
Native defect formation and migration in monoclinic zirconium dioxide LB Shi, YP Wang, MB Li Materials science in semiconductor processing 27, 586-592, 2014 | 15 | 2014 |
Density functional theory description of origin of ferromagnetism in Cu doped SnO2 LB Shi, HK Dong, GQ Qi Journal of magnetism and magnetic materials 345, 215-221, 2013 | 15 | 2013 |