| A brief review of doping issues in III-V semiconductors KS Jones, AG Lind, C Hatem, S Moffatt, MC Ridgeway ECS Transactions 53 (3), 97-105, 2013 | 27 | 2013 |
| Dopant Selection Considerations and Equilibrium Thermal Processing Limits for n+-In0. 53Ga0. 47As AG Lind, HL Aldridge, C Hatem, ME Law, KS Jones ECS Journal of Solid State Science and Technology 5 (5), Q125-Q131, 2016 | 21 | 2016 |
| Maximizing electrical activation of ion-implanted Si in In0. 53Ga0. 47As AG Lind, NG Rudawski, NJ Vito, C Hatem, MC Ridgway, R Hengstebeck, ... Applied Physics Letters 103 (23), 232102, 2013 | 21 | 2013 |
| N-type doping strategies for InGaAs H Aldridge, AG Lind, CC Bomberger, Y Puzyrev, JMO Zide, ST Pantelides, ... Materials Science in Semiconductor Processing 57, 39-47, 2017 | 17 | 2017 |
| Comparison of thermal annealing effects on electrical activation of MBE grown and ion implant Si-doped In0.53Ga0.47As AG Lind, HL Aldridge Jr, CC Bomberger, C Hatem, JMO Zide, KS Jones Journal of Vacuum Science & Technology B, Nanotechnology and …, 2015 | 16 | 2015 |
| Cycling performance and morphological evolution of pulsed laser-deposited FeF2 thin film cathodes for Li-ion batteries S Al Khateeb, AG Lind, R Santos-Ortiz, ND Shepherd, KS Jones Journal of Materials Science 50 (15), 5174-5182, 2015 | 16 | 2015 |
| Concentration-dependent diffusion of ion-implanted silicon in In0. 53Ga0. 47As HL Aldridge Jr, AG Lind, ME Law, C Hatem, KS Jones Applied Physics Letters 105 (4), 042113, 2014 | 15 | 2014 |
| Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors PG Whiting, MR Holzworth, AG Lind, SJ Pearton, KS Jones, L Liu, ... Microelectronics Reliability 70, 32-40, 2017 | 13 | 2017 |
| Electrical activation of ion implanted Si in amorphous and crystalline In 0.53 Ga 0.47 As AG Lind, MA Gill, C Hatem, KS Jones Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2014 | 13 | 2014 |
| Quantitative correlation of interfacial contamination and antiphase domain boundary density in gaAs on Si (100) CSC Barrett, AG Lind, X Bao, Z Ye, KY Ban, P Martin, E Sanchez, Y Xin, ... Journal of Materials Science 51 (1), 449-456, 2016 | 11 | 2016 |
| Effects of Steel Cell Components on Overall Capacity of Pulsed Laser Deposited FeF2 Thin Film Lithium Ion Batteries S Al Khateeb, AG Lind, R Santos-Ortiz, ND Shepherd, KS Jones Journal of The Electrochemical Society 162 (8), A1667-A1674, 2015 | 11 | 2015 |
| Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs YH Hwang, S Ahn, C Dong, W Zhu, BJ Kim, L Le, F Ren, AG Lind, J Dahl, ... Journal of Vacuum Science & Technology B, Nanotechnology and …, 2015 | 9 | 2015 |
| Implantation and Diffusion of Silicon Marker Layers in In0. 53Ga0. 47As H Aldridge, AG Lind, CC Bomberger, Y Puzyrev, C Hatem, RM Gwilliam, ... Journal of Electronic Materials 45 (8), 4282-4287, 2016 | 7 | 2016 |
| Co-implantation of Al+, P+, and S+ with Si+ implants into In0.53Ga0.47As AG Lind, HL Aldridge Jr, KS Jones, C Hatem Journal of Vacuum Science & Technology B, Nanotechnology and …, 2015 | 7 | 2015 |
| Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors S Ahn, W Zhu, C Dong, L Le, YH Hwang, BJ Kim, F Ren, SJ Pearton, ... Journal of Vacuum Science & Technology B, Nanotechnology and …, 2015 | 7 | 2015 |
| Fermi-Level Effects on Extended Defect Evolution in Si+ and P+ Implanted In0. 53Ga0. 47As AG Lind, HL Aldridge, CC Bomberger, C Hatem, JMO Zide, KS Jones ECS Journal of Solid State Science and Technology 5 (4), P3073-P3077, 2016 | 6 | 2016 |
| Annealing Effects on the Electrical Activation of Si Dopants in InGaAs AG Lind, HL Aldridge, CC Bomberger, C Hatem, JMO Zide, KS Jones ECS Transactions 66 (7), 23-27, 2015 | 6 | 2015 |
| Activation of Si implants into InAs characterized by Raman scattering AG Lind, TP Martin Jr, VC Sorg, EL Kennon, VQ Truong, HL Aldridge, ... Journal of Applied Physics 119 (9), 095705, 2016 | 5 | 2016 |
| Deactivation of electrically supersaturated Te-doped InGaAs grown by MOCVD EL Kennon, T Orzali, Y Xin, A Vert, AG Lind, KS Jones Journal of Materials Science 52 (18), 10879-10885, 2017 | 3 | 2017 |
| TECHNIQUES FOR INCREASED DOPANT ACTIVATION IN COMPOUND SEMICONDUCTORS CR Hatem, B Colombeau, K Jones, A Lind US Patent 20,150,364,325, 2015 | 3 | 2015 |
