Alexander  Tritchkov
Alexander Tritchkov
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Double pattern EDA solutions for 32nm HP and beyond
GE Bailey, A Tritchkov, JW Park, L Hong, V Wiaux, E Hendrickx, ...
Design for Manufacturability through Design-Process Integration 6521, 476-487, 2007
Intensive optimization of masks and sources for 22nm lithography
AE Rosenbluth, DO Melville, K Tian, S Bagheri, J Tirapu-Azpiroz, K Lai, ...
Optical Microlithography XXII 7274, 67-81, 2009
Dual-mask model-based proximity correction for high-performance 0.10-um CMOS process
SR Palmer, ME Mason, JN Randall, T Aton, K Kim, AV Tritchkov, J Burdorf, ...
20th Annual BACUS Symposium on Photomask Technology 4186, 921-932, 2001
Characterization and correction of optical proximity effects in deep‐ultraviolet lithography using behavior modeling
A Yen, A Tritchkov, JP Stirniman, G Vandenberghe, R Jonckheere, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996
Demonstrating the benefits of source-mask optimization and enabling technologies through experiment and simulations
D Melville, AE Rosenbluth, K Tian, K Lai, S Bagheri, J Tirapu-Azpiroz, ...
Optical Microlithography XXIII 7640, 51-68, 2010
IC layout parsing for multiple masks
A Tritchkov, EY Sahouria, L Hong
US Patent 8,713,483, 2014
Lithography simulation with aerial image—variable threshold resist model
J Randall, H Gangala, A Tritchkov
Microelectronic engineering 46 (1-4), 59-63, 1999
Model-based SRAF insertion through pixel-based mask optimization at 32nm and beyond
K Sakajiri, A Tritchkov, Y Granik
Photomask and Next-Generation Lithography Mask Technology XV 7028, 325-336, 2008
Lithography enabling for the 65 nm node gate layer patterning with alternating PSM
A Tritchkov, S Jeong, C Kenyon
Optical Microlithography XVIII 5754, 215-225, 2005
Optical proximity effects and correction strategies for chemical-amplified DUV resists
MO de Beeck, B Bruggeman, H Botermans, V Van Driessche, A Yen, ...
Optical Microlithography IX 2726, 622-633, 1996
Hyper-NA imaging of 45nm node random CH layouts using inverse lithography
E Hendrickx, A Tritchkov, K Sakajiri, Y Granik, M Kempsell, ...
Optical Microlithography XXI 6924, 196-205, 2008
Computational lithography: exhausting the resolution limits of 193-nm projection lithography systems
DOS Melville, AE Rosenbluth, A Waechter, M Millstone, J Tirapu-Azpiroz, ...
Journal of Vacuum Science & Technology B 29 (6), 2011
Inverse lithography for 45-nm-node contact holes at 1.35 numerical aperture
ML Kempsell, E Hendrickx, A Tritchkov, K Sakajiri, K Yasui, S Yoshitake, ...
Journal of Micro/Nanolithography, MEMS and MOEMS 8 (4), 043001-043001-9, 2009
Optically induced mask critical dimension error magnification in 248 nm lithography
JN Randall, A Tritchkov
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998
Reduction of mask-induced CD errors by optical proximity correction
J Randall, AV Tritchkov, RM Jonckheere, P Jaenen, KG Ronse
Optical Microlithography XI 3334, 124-130, 1998
Electron beam/DUV intra-level mix-and-match lithography for random logic 0.25 μm CMOS
R Jonckheere, A Tritchkov, V Van Driessche
Microelectronic engineering 27 (1-4), 231-234, 1995
Lithographic benefits and mask manufacturability study of curvilinear masks
VW Guo, F Jiang, J Rankin, I Bork, A Tritchkov, A Wei, Y Sun, S Jayaram, ...
Photomask Technology 2018 10810, 106-118, 2018
Directed self-assembly (DSA) grapho-epitaxy template generation with immersion lithography
Y Ma, J Lei, JA Torres, L Hong, J Word, G Fenger, A Tritchkov, ...
Alternative Lithographic Technologies VII 9423, 23-33, 2015
Double-patterning decomposition, design compliance, and verification algorithms at 32nm HP
A Tritchkov, P Glotov, S Komirenko, E Sahouria, A Torres, A Seoud, ...
Photomask Technology 2008 7122, 251-265, 2008
Study on various curvilinear data representations and their impact on mask and wafer manufacturing
J Choi, S Ryu, S Lee, M Kim, JS Park, P Buck, I Bork, B Durvasula, ...
Journal of Micro/Nanopatterning, Materials, and Metrology 20 (4), 041403-041403, 2021
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