E A Fitzgerald
E A Fitzgerald
Cornell, ATT, MIT, Massachusetts Institute of Technology, NTU
E-mail confirmado em mit.edu - Página inicial
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Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
ML Lee, EA Fitzgerald, MT Bulsara, MT Currie, A Lochtefeld
Journal of Applied Physics 97 (1), 1, 2005
Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates
EA Fitzgerald, YH Xie, ML Green, D Brasen, AR Kortan, J Michel, YJ Mii, ...
Applied physics letters 59 (7), 811-813, 1991
Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing
MT Currie, SB Samavedam, TA Langdo, CW Leitz, EA Fitzgerald
Applied physics letters 72 (14), 1718-1720, 1998
Relaxed GexSi1−x structures for III–V integration with Si and high mobility two‐dimensional electron gases in Si
EA Fitzgerald, YH Xie, D Monroe, PJ Silverman, JM Kuo, AR Kortan, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1992
Dislocations in strained-layer epitaxy: theory, experiment, and applications
EA Fitzgerald
Materials science reports 7 (3), 87-142, 1991
Impurity enhancement of the 1.54‐μm Er3+ luminescence in silicon
J Michel, JL Benton, RF Ferrante, DC Jacobson, DJ Eaglesham, ...
Journal of applied physics 70 (5), 2672-2678, 1991
Coherent phonon heat conduction in superlattices
MN Luckyanova, J Garg, K Esfarjani, A Jandl, MT Bulsara, AJ Schmidt, ...
Science 338 (6109), 936-939, 2012
Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
M Currie, A Lochtefeld, R Hammond, E Fitzgerald
US Patent 6,831,292, 2004
Methods of forming strained-semiconductor-on-insulator finFET device structures
AJ Lochtefeld, TA Langdo, R Hammond, MT Currie, G Braithwaite, ...
US Patent 7,074,623, 2006
Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area
EA Fitzgerald, GP Watson, RE Proano, DG Ast, PD Kirchner, GD Pettit, ...
Journal of Applied Physics 65 (6), 2220-2237, 1989
Luminescence and structural study of porous silicon films
YH Xie, WL Wilson, FM Ross, JA Mucha, EA Fitzgerald, JM Macaulay, ...
Journal of applied physics 71 (5), 2403-2407, 1992
Strained-semiconductor-on-insulator device structures
TA Langdo, MT Currie, R Hammond, AJ Lochtefeld, EA Fitzgerald
US Patent 6,995,430, 2006
Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy
YJ Mii, YH Xie, EA Fitzgerald, D Monroe, FA Thiel, BE Weir, LC Feldman
Applied physics letters 59 (13), 1611-1613, 1991
Semiconductor surface roughness: dependence on sign and magnitude of bulk strain
YH Xie, GH Gilmer, C Roland, PJ Silverman, SK Buratto, JY Cheng, ...
Physical Review Letters 73 (22), 3006, 1994
Strained silicon MOSFET technology
JL Hoyt, HM Nayfeh, S Eguchi, I Aberg, G Xia, T Drake, EA Fitzgerald, ...
Digest. International Electron Devices Meeting,, 23-26, 2002
Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers
ME Groenert, CW Leitz, AJ Pitera, V Yang, H Lee, RJ Ram, EA Fitzgerald
Journal of applied physics 93 (1), 362-367, 2003
Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates
MT Currie, CW Leitz, TA Langdo, G Taraschi, EA Fitzgerald, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001
High quality Ge on Si by epitaxial necking
TA Langdo, CW Leitz, MT Currie, EA Fitzgerald, A Lochtefeld, ...
Applied Physics Letters 76 (25), 3700-3702, 2000
Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on virtual substrates
ML Lee, CW Leitz, Z Cheng, AJ Pitera, T Langdo, MT Currie, G Taraschi, ...
Applied Physics Letters 79 (20), 3344-3346, 2001
Novel dislocation structure and surface morphology effects in relaxed Ge/Si-Ge (graded)/Si structures
SB Samavedam, EA Fitzgerald
Journal of Applied Physics 81 (7), 3108-3116, 1997
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