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Zhihong Liu
Zhihong Liu
Xidian University, China
E-mail confirmado em ieee.org
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Electrothermal simulation and thermal performance study of GaN vertical and lateral power transistors
Y Zhang, M Sun, Z Liu, D Piedra, HS Lee, F Gao, T Fujishima, T Palacios
IEEE Transactions on Electron Devices 60 (7), 2224-2230, 2013
1332013
Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation
ZH Liu, GI Ng, H Zhou, S Arulkumaran, YKT Maung
Applied Physics Letters 98 (11), 113506, 2011
1242011
Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al 2 O …
ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ...
Applied Physics Letters 95 (22), 223501, 2009
1212009
Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, ...
IEEE Electron Device Letters 38 (8), 1097-1100, 2017
1142017
Large-area 1.2-kV GaN vertical power FinFETs with a record switching figure of merit
Y Zhang, M Sun, J Perozek, Z Liu, A Zubair, D Piedra, N Chowdhury, ...
IEEE Electron Device Letters 40 (1), 75-78, 2018
792018
1200 V GaN vertical fin power field-effect transistors
Y Zhang, M Sun, D Piedra, J Hu, Z Liu, Y Lin, X Gao, K Shepard, ...
2017 IEEE International Electron Devices Meeting (IEDM), 9.2. 1-9.2. 4, 2017
782017
Trench formation and corner rounding in vertical GaN power devices
Y Zhang, M Sun, Z Liu, D Piedra, J Hu, X Gao, T Palacios
Applied Physics Letters 110 (19), 193506, 2017
782017
Temperature-dependent forward gate current transport in atomic-layer-deposited metal-insulator-semiconductor high electron mobility transistor
ZH Liu, GI Ng, S Arulkumaran, YKT Maung, H Zhou
Applied Physics Letters 98 (16), 163501, 2011
772011
GaN high electron mobility transistors for sub-millimeter wave applications
DS Lee, Z Liu, T Palacios
Japanese Journal of Applied Physics 53 (10), 100212, 2014
732014
Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from− 50 to 200 C
ZH Liu, S Arulkumaran, GI Ng
Applied Physics Letters 94 (14), 142105, 2009
712009
High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With Gate Insulator Grown by ALD
ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ...
IEEE Electron Device Letters 31 (2), 96-98, 2009
672009
Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate
S Arulkumaran, ZH Liu, GI Ng, WC Cheong, R Zeng, J Bu, H Wang, ...
Thin Solid Films 515 (10), 4517-4521, 2007
642007
Improved Linearity for Low-Noise Applications in 0.25- GaN MISHEMTs Using ALD as Gate Dielectric
ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ...
IEEE Electron Device Letters 31 (8), 803-805, 2010
592010
InAlN/GaN HEMTs on Si With High of 250 GHz
W Xing, Z Liu, H Qiu, K Ranjan, Y Gao, GI Ng, T Palacios
IEEE Electron Device Letters 39 (1), 75-78, 2017
552017
Effect of gate-source and gate-drain SiN passivation on current collapse in AlGaN∕ GaN high-electron-mobility transistors on silicon
S Arulkumaran, GI Ng, ZH Liu
Applied physics letters 90, 173504, 2007
552007
High-Performance Vertical -Ga2O3 Schottky Barrier Diode With Implanted Edge Termination
H Zhou, Q Yan, J Zhang, Y Lv, Z Liu, Y Zhang, K Dang, P Dong, Z Feng, ...
IEEE Electron Device Letters 40 (11), 1788-1791, 2019
502019
High temperature terahertz detectors realized by a GaN high electron mobility transistor
HW Hou, Z Liu, JH Teng, T Palacios, SJ Chua
Scientific Reports 7, 46664, 2017
502017
Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings
Y Zhang, M Sun, Z Liu, D Piedra, M Pan, X Gao, Y Lin, A Zubair, L Yu, ...
2016 IEEE International Electron Devices Meeting (IEDM), 10.2. 1-10.2. 4, 2016
482016
AlGaN/AlN/GaN High-Electron-Mobility Transistors Fabricated with Au-Free Technology
Z Liu, M Sun, HS Lee, M Heuken, T Palacios
Applied Physics Express 6 (9), 096502, 2013
412013
Improved Device Performance by Post-Oxide Annealing in Atomic-Layer-Deposited Al2O3/AlGaN/GaN Metal? Insulator? Semiconductor High Electron Mobility Transistor on Si
H Zhou, GI Ng, ZH Liu, S Arulkumaran
Applied physics express 4 (10), 104102, 2011
382011
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