Larry Rowland
Larry Rowland
Aymont Technology, Inc.
E-mail confirmado em ieee.org
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Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition
ER Glaser, TA Kennedy, K Doverspike, LB Rowland, DK Gaskill, ...
Physical Review B 51 (19), 13326, 1995
3951995
Microstructural characterization of α‐GaN films grown on sapphire by organometallic vapor phase epitaxy
W Qian, M Skowronski, M De Graef, K Doverspike, LB Rowland, ...
Applied physics letters 66 (10), 1252-1254, 1995
3511995
Open‐core screw dislocations in GaN epilayers observed by scanning force microscopy and high‐resolution transmission electron microscopy
W Qian, GS Rohrer, M Skowronski, K Doverspike, LB Rowland, ...
Applied physics letters 67 (16), 2284-2286, 1995
2571995
SiC materials-progress, status, and potential roadblocks
AR Powell, LB Rowland
Proceedings of the IEEE 90 (6), 942-955, 2002
2492002
Temperature dependence of Fowler-Nordheim current in 6H-and 4H-SiC MOS capacitors
AK Agarwal, S Seshadri, LB Rowland
IEEE Electron Device Letters 18 (12), 592-594, 1997
2371997
Microwave performance of GaN MESFETS
SC Binari, LB Rowland, W Kruppa, G Kelner, K Doverspike, DK Gaskill
Electronics letters 30 (15), 1248-1249, 1994
2331994
Dislocation conversion in 4H silicon carbide epitaxy
S Ha, P Mieszkowski, M Skowronski, LB Rowland
Journal of Crystal Growth 244 (3-4), 257-266, 2002
2292002
Gallium nitride crystals and wafers and method of making
MP D'evelyn, DS Park, SF Leboeuf, LB Rowland, KJ Narang, H Hong, ...
US Patent 7,078,731, 2006
2282006
Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors
AP Zhang, LB Rowland, EB Kaminsky, V Tilak, JC Grande, J Teetsov, ...
Journal of electronic materials 32 (5), 388-394, 2003
1692003
1.1 kv 4h-sic power umosfets
AK Agarwal, JB Casady, LB Rowland, WF Valek, MH White, CD Brandt
IEEE Electron Device Letters 18 (12), 586-588, 1997
1641997
H, He, and N implant isolation of n‐type GaN
SC Binari, HB Dietrich, G Kelner, LB Rowland, K Doverspike, ...
Journal of applied physics 78 (5), 3008-3011, 1995
1521995
Electrical characterisation of Ti Schottky barriers on n-type GaN
SC Binari, HB Dietrich, G Kelner, LB Rowland, K Doverspike, DK Gaskill
Electronics letters 30 (11), 909-911, 1994
1451994
Development of a silicon carbide radiation detector
FH Ruddy, AR Dulloo, JG Seidel, S Seshadri, LB Rowland
IEEE Transactions on Nuclear Science 45 (3), 536-541, 1998
1361998
The role of excess silicon and in situ etching on 4HSiC and 6HSiC epitaxial layer morphology
AA Burk Jr, LB Rowland
Journal of crystal growth 167 (3-4), 586-595, 1996
1341996
Temperature-dependent emission intensity and energy shift in InGaN/GaN multiple-quantum-well light-emitting diodes
XA Cao, SF LeBoeuf, LB Rowland, CH Yan, H Liu
Applied Physics Letters 82 (21), 3614-3616, 2003
1322003
Demonstration of an SiC neutron detector for high-radiation environments
S Seshadri, AR Dulloo, FH Ruddy, JG Seidel, LB Rowland
IEEE Transactions on Electron Devices 46 (3), 567-571, 1999
1201999
Gallium nitride crystal and method of making same
MP D'evelyn, DS Park, S LeBoeuf, L Rowland, K Narang, H Hong, ...
US Patent 7,098,487, 2006
1122006
Gallium nitride crystals and wafers and method of making
MP D'evelyn, D Park, SF Leboeuf, LB Rowland, KJ Narang, H Hong, ...
US Patent 7,786,503, 2010
1002010
4H-SiC MESFET's with 42 GHz fmax
S Sriram, G Augustine, AA Burk, RC Glass, HM Hobgood, PA Orphanos, ...
IEEE Electron Device Letters 17 (7), 369-371, 1996
951996
Stacking-fault formation and propagation in 4H-SiC PiN diodes
RE Stahlbush, M Fatemi, JB Fedison, SD Arthur, LB Rowland, S Wang
Journal of electronic materials 31 (5), 370-375, 2002
902002
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