| Modeling of effective thermal resistance in sub-14-nm stacked nanowire and FinFETs I Jain, A Gupta, TB Hook, A Dixit IEEE Transactions on Electron Devices 65 (10), 4238-4244, 2018 | 48 | 2018 |
| 3-D LER and RDF matching performance of nanowire FETs in inversion, accumulation, and junctionless modes AK Bansal, C Gupta, A Gupta, R Singh, TB Hook, A Dixit IEEE Transactions on Electron Devices 65 (3), 1246-1252, 2018 | 37 | 2018 |
| Reliability modeling and analysis of hot-carrier degradation in multiple-fin SOI n-channel FinFETs with self-heating A Gupta, C Gupta, RA Vega, TB Hook, A Dixit IEEE Transactions on Electron Devices 66 (5), 2075-2080, 2019 | 36 | 2019 |
| Investigation of Hot-Carrier Degradation in 0.18- m MOSFETs for the Evaluation of Device Lifetime and Digital Circuit Performance A Gupta, C Gupta, HS Jatana, A Dixit IEEE Transactions on Device and Materials Reliability 19 (4), 609-614, 2019 | 26 | 2019 |
| Impact of hot-carrier degradation on drain-induced barrier lowering in multifin SOI n-channel FinFETs with self-heating C Gupta, A Gupta, RA Vega, TB Hook, A Dixit IEEE Transactions on Electron Devices 67 (5), 2208-2212, 2020 | 11 | 2020 |
| Analytical modeling of parasitic capacitance in inserted-oxide FinFETs R Singh, A Gupta, C Gupta, AK Bansal, TB Hook, A Dixit IEEE Transactions on Electron Devices 64 (12), 5274-5278, 2017 | 11 | 2017 |
| Single event transients in sub-10nm SOI MuGFETs due to heavy-ion irradiation CK Jha, K Aditya, C Gupta, A Gupta, A Dixit IEEE Transactions on Device and Materials Reliability 20 (2), 395-403, 2020 | 10 | 2020 |
| Impact of LER on Mismatch in Nanosheet Transistors for 5nm-CMOS CK Jha, C Gupta, A Gupta, RA Vega, A Dixit 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020 | 8 | 2020 |
| Characterization and modeling of hot carrier degradation in N-channel gate-all-around nanowire FETs C Gupta, A Gupta, S Tuli, E Bury, B Parvais, A Dixit IEEE Transactions on Electron Devices 67 (1), 4-10, 2019 | 7 | 2019 |
| Suppression of short-channel effects by double-gate double-channel device design in normally-off AlGaN/GaN MIS-HEMTs C Gupta, A Gupta, AK Bansal, A Dixit IETE Journal of Research 67 (3), 425-432, 2021 | 4 | 2021 |
| Stressor Efficacy and Mobility Enhancement in N-Channel Nanowire FETs A Gupta, C Gupta, AK Bansal, A Dixit EDSSC 2017, Taiwan, 2017 | 4 | 2017 |
| Time evolution of DIBL in gate-all-around nanowire MOSFETs during hot-carrier stress A Gupta, C Gupta, A Veloso, B Parvais, A Dixit IEEE Transactions on Electron Devices 68 (6), 2641-2646, 2021 | 3 | 2021 |
| Impact of Hot Carrier Degradation on GIDL Current in 45nm SOI-NFETs C Gupta, A Gupta, A Dixit 2019 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2019 | 3 | 2019 |
| Comparison of Heat Outflow in Dense Sub-14nm Contemporary NFETs: Bulk/SOI, Inserted-Oxide FinFET and Nanowire FET I Jain, A Gupta, AK Bansal, TB Hook, A Dixit 3rd International Conference on Emerging Electronics (ICEE), IIT Bombay, India, 2016 | 2 | 2016 |
| Superior transient response to heavy-Ion irradiation by N-Channel SOI-iFinFETs K Aditya, R Singh, AK Bansal, R Saini, A Gupta, A Dixit IETE Journal of Research 68 (3), 2231-2237, 2022 | 1 | 2022 |
| A physics based model for DC self-heating in nanowire-FET considering lattice temperature M Kumar, AK Bansal, K Aditya, C Gupta, A Gupta, A Dixit 2018 4th IEEE International Conference on Emerging Electronics (ICEE), 1-5, 2018 | 1 | 2018 |
| Gate Topologies for Mitigation of Short Channel Effects in Highly Scaled AlGaN/GaN HEMTs A Gupta, C Gupta, AK Bansal, A Dixit EDSSC 2017, Taiwan, 2017 | 1 | 2017 |
| Impact of Hot Carrier Stress on RF FOMs in 10-nm Bulk N-Channel FinFETs A Gupta, C Gupta, RA Vega, A Dixit 2019 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2019 | | 2019 |
Abhisek DixitNXP Chair Professor, Electrical Engineering, IIT Delhi, New Delhi, IndiaVerified email at ee.iitd.ac.in
