| Iron and intrinsic deep level states in Ga2O3 ME Ingebrigtsen, JB Varley, AY Kuznetsov, BG Svensson, G Alfieri, ... Applied Physics Letters 112 (4), 2018 | 279 | 2018 |
| Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3 ME Ingebrigtsen, AY Kuznetsov, BG Svensson, G Alfieri, A Mihaila, ... Apl Materials 7 (2), 2019 | 212 | 2019 |
| Annealing behavior between room temperature and 2000 C of deep level defects in electron-irradiated n-type 4H silicon carbide G Alfieri, EV Monakhov, BG Svensson, MK Linnarsson Journal of applied physics 98 (4), 2005 | 147 | 2005 |
| Detection and depth analyses of deep levels generated by ion implantation in n-and p-type 4H-SiC K Kawahara, G Alfieri, T Kimoto Journal of Applied Physics 106 (1), 2009 | 101 | 2009 |
| Electrically active defects in irradiated 4H-SiC ML David, G Alfieri, EM Monakhov, A Hallén, C Blanchard, BG Svensson, ... Journal of applied physics 95 (9), 4728-4733, 2004 | 96 | 2004 |
| Kinetics of divacancy annealing and divacancy-oxygen formation in oxygen-enriched high-purity silicon M Mikelsen, EV Monakhov, G Alfieri, BS Avset, BG Svensson Physical Review B—Condensed Matter and Materials Physics 72 (19), 195207, 2005 | 84 | 2005 |
| Evidence for identification of the divacancy-oxygen center in Si G Alfieri, EV Monakhov, BS Avset, BG Svensson Physical Review B 68 (23), 233202, 2003 | 68 | 2003 |
| Radiation-hard semiconductor detectors for SuperLHC M Bruzzi, J Adey, A Al-Ajili, P Alexandrov, G Alfieri, PP Allport, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2005 | 65 | 2005 |
| Development of radiation tolerant semiconductor detectors for the Super-LHC M Moll, J Adey, A Al-Ajili, G Alfieri, PP Allport, M Artuso, S Assouak, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2005 | 64 | 2005 |
| Defect energy levels in hydrogen-implanted and electron-irradiated n-type 4H silicon carbide G Alfieri, EV Monakhov, BG Svensson, A Hallén Journal of applied physics 98 (11), 2005 | 62 | 2005 |
| Major deep levels with the same microstructures observed in n-type 4H–SiC and 6H–SiC S Sasaki, K Kawahara, G Feng, G Alfieri, T Kimoto Journal of Applied Physics 109 (1), 2011 | 56 | 2011 |
| Recent advancements in the development of radiation hard semiconductor detectors for S-LHC E Fretwurst, J Adey, A Al-Ajili, G Alfieri, PP Allport, M Artuso, S Assouak, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2005 | 48 | 2005 |
| Engineering the band gap of SiC nanotubes with a transverse electric field G Alfieri, T Kimoto Applied Physics Letters 97 (4), 2010 | 47 | 2010 |
| Bistable defect in mega-electron-volt proton implanted 4H silicon carbide DM Martin, H Kortegaard Nielsen, P Leveque, A Hallén, G Alfieri, ... Applied physics letters 84 (10), 1704-1706, 2004 | 44 | 2004 |
| Resolving the EH6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy G Alfieri, T Kimoto Applied Physics Letters 102 (15), 2013 | 38 | 2013 |
| Divacancy annealing in Si: Influence of hydrogen EV Monakhov, A Ulyashin, G Alfieri, AY Kuznetsov, BS Avset, ... Physical Review B 69 (15), 153202, 2004 | 37 | 2004 |
| Capacitance spectroscopy study of deep levels in Cl-implanted 4H-SiC G Alfieri, T Kimoto Journal of Applied Physics 112, 063717, 2012 | 36 | 2012 |
| Bulk β-Ga2O3 with (010) and (201) Surface Orientation: Schottky Contacts and Point Defects ME Ingebrigtsen, L Vines, G Alfieri, A Mihaila, U Badstübner, ... Materials Science Forum 897, 755-758, 2017 | 35 | 2017 |
| Isothermal annealing study of the EH1 and EH3 levels in n-type 4H-SiC G Alfieri, A Mihaila Journal of Physics: Condensed Matter 32 (46), 465703, 2020 | 28 | 2020 |
| The current status and future prospects of SiC high voltage technology A Mihaila, L Knoll, E Bianda, M Bellini, S Wirths, G Alfieri, L Kranz, ... 2018 IEEE International Electron Devices Meeting (IEDM), 19.2. 1-19.2. 4, 2018 | 26 | 2018 |
Tsunenobu KimotoKyoto UniversityE-mail confirmado em kyoto-u.ac.jp
