High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using R Zhang, PC Huang, JC Lin, N Taoka, M Takenaka, S Takagi
IEEE Transactions on Electron Devices 60 (3), 927-934, 2013
229 2013 High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using R Zhang, PC Huang, JC Lin, N Taoka, M Takenaka, S Takagi
IEEE Transactions on Electron Devices 60 (3), 927-934, 2013
229 2013 1-nm-thick EOT high mobility Ge n- and p-MOSFETs with ultrathin GeOx /Ge MOS interfaces fabricated by plasma post oxidation R Zhang, N Taoka, PC Huang, M Takenaka, S Takagi
2011 International Electron Devices Meeting, 28.3. 1-28.3. 4, 2011
96 2011 High mobility Ge pMOSFETs with 0.7 nm ultrathin EOT using HfO2 /Al2 O3 /GeOx /Ge gate stacks fabricated by plasma post oxidation R Zhang, PC Huang, N Taoka, M Takenaka, S Takagi
2012 Symposium on VLSI Technology (VLSIT), 161-162, 2012
72 2012 Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al2O3/Ge structures R Zhang, PC Huang, JC Lin, M Takenaka, S Takagi
Applied Physics Letters 102 (8), 2013
39 2013 Comparison of the trap behavior between ZrO2 and HfO2 gate stack nMOSFETs by 1/f noise and random telegraph noise BC Wang, YY Lu, SJ Chang, JF Chen, SC Tsai, CH Hsu, CW Yang, ...
IEEE electron device letters 34 (2), 151-153, 2012
31 2012 Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx /Ge interfaces R Zhang, PC Huang, JC Lin, M Takenaka, S Takagi
2012 International Electron Devices Meeting, 16.1. 1-16.1. 4, 2012
26 2012 Low-Frequency Noise Characteristics for Various SC Tsai, BC Wang, SJ Chang, CH Hsu, CW Yang, CM Lai, CW Hsu, ...
IEEE electron device letters 34 (7), 834-836, 2013
15 2013 Investigation of electrical characteristics of vertical junction Si n-type tunnel FET PC Huang, T Tanamoto, M Goto, M Takenaka, S Takagi
IEEE Transactions on Electron Devices 65 (12), 5511-5517, 2018
12 2018 Characterization of oxide traps in 28 nm n-type metal–oxide–semiconductor field-effect transistors with different uniaxial tensile stresses utilizing random telegraph noise BC Wang, SL Wu, YY Lu, CW Huang, CY Wu, YM Lin, KH Lee, O Cheng, ...
Japanese Journal of Applied Physics 52 (4S), 04CC24, 2013
9 2013 Low temperature formation of higher-k cubic phase HfO2 by atomic layer deposition on GeOx/Ge structures fabricated by in-situ thermal oxidation R Zhang, PC Huang, N Taoka, M Yokoyama, M Takenaka, S Takagi
Applied Physics Letters 108 (5), 2016
6 2016 Investigation of impact ionization in strained-Si n-channel metal–oxide–semiconductor field-effect transistors TK Kang, PC Huang, YH Sa, SL Wu, SJ Chang
Japanese journal of applied physics 47 (4S), 2664, 2008
6 2008 Characteristics of PC Huang, SJ Chang, YT Huang, JF Chen, CT Lin, M Ma, O Cheng
IEEE transactions on electron devices 58 (6), 1635-1642, 2011
5 2011 Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis TH Kao, SJ Chang, YK Fang, PC Huang, CM Lai, CW Hsu, YW Chen, ...
Applied Physics Letters 105 (6), 2014
4 2014 Effect of annealing process on trap properties in high-k/metal gate n-channel metal–oxide–semiconductor field-effect transistors through low-frequency noise and random … HF Chiu, YS Chang, SJ Chang, PC Huang, JF Chen, SC Tsai, CM Lai, ...
Japanese Journal of Applied Physics 52 (4S), 04CC22, 2013
4 2013 Impact of Uniaxial Strain on Random Telegraph Noise in High- PC Huang, JF Chen, SC Tsai, KS Tsai, TH Kao, YK Fang, CM Lai, ...
IEEE Transactions on Electron Devices 62 (3), 988-993, 2015
3 2015 Impact of Aluminum Ion Implantation on the Low Frequency Noise Characteristics of Hf-Based High- TH Kao, SL Wu, CY Wu, YK Fang, BC Wang, PC Huang, CM Lai, CW Hsu, ...
IEEE Electron Device Letters 35 (9), 954-956, 2014
3 2014 Investigation of low-frequency noise of 28-nm technology process of high-k/metal gate p-MOSFETs with fluorine incorporation TH Kao, SJ Chang, YK Fang, PC Huang, BC Wang, CY Wu, SL Wu
Solid-State Electronics 115, 7-11, 2016
2 2016 Temperature dependence of low-frequency noise characteristics in uniaxial tensile strained nMOSFETs PC Huang, CY Chang, O Cheng, SJ Chang
Japanese Journal of Applied Physics 54 (10), 100301, 2015
2 2015 Investigation of trap properties of Hf0. 83Zr0. 17O2 high-k gate stack p-type MOSFETs by low-frequency (1/f) noise and random telegraph noise analyses SC Tsai, SL Wu, PC Huang, BC Wang, KS Tsai, TH Kao, CW Yang, ...
Japanese Journal of Applied Physics 53 (8S1), 08LB03, 2014
2 2014 