Associate Professor of School of Electrical and Electronic Engineering, Nanyang Technological
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Low-threshold optically pumped lasing in highly strained germanium nanowires
S Bao, D Kim, C Onwukaeme, S Gupta, K Saraswat, KH Lee, Y Kim, D Min, ...
Nature communications 8 (1), 1-7, 2017
Waveguide-integrated black phosphorus photodetector for mid-infrared applications
L Huang, B Dong, X Guo, Y Chang, N Chen, X Huang, W Liao, C Zhu, ...
ACS nano 13 (1), 913-921, 2018
Periodic organic–inorganic halide perovskite microplatelet arrays on silicon substrates for room‐temperature lasing
X Liu, L Niu, C Wu, C Cong, H Wang, Q Zeng, H He, Q Fu, W Fu, T Yu, ...
Advanced Science 3 (11), 1600137, 2016
Direct electron-beam writing of continuous spiral phase plates in negative resist with high power efficiency for optical manipulation
WC Cheong, WM Lee, XC Yuan, LS Zhang, K Dholakia, H Wang
Applied physics letters 85 (23), 5784-5786, 2004
High-speed silicon modulators for the 2 μm wavelength band
W Cao, D Hagan, DJ Thomson, M Nedeljkovic, CG Littlejohns, A Knights, ...
Optica 5 (9), 1055-1062, 2018
Ultra-broadband on-chip twisted light emitter for optical communications
Z Xie, T Lei, F Li, H Qiu, Z Zhang, H Wang, C Min, L Du, Z Li, X Yuan
Light: Science & Applications 7 (4), 18001-18001, 2018
Design and fabrication of a double-axicon for generation of tailorable self-imaged three-dimensional intensity voids
BPS Ahluwalia, WC Cheong, XC Yuan, LS Zhang, SH Tao, J Bu, H Wang
Optics letters 31 (7), 987-989, 2006
Inorganic, organic, and perovskite halides with nanotechnology for high–light yield X-and γ-ray scintillators
F Maddalena, L Tjahjana, A Xie, S Zeng, H Wang, P Coquet, ...
Crystals 9 (2), 88, 2019
Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon
G Ye, H Wang, S Arulkumaran, GI Ng, R Hofstetter, Y Li, MJ Anand, ...
Applied Physics Letters 103 (14), 142109, 2013
Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si (111) substrate
S Arulkumaran, GI Ng, S Vicknesh, H Wang, KS Ang, JPY Tan, VK Lin, ...
Japanese Journal of Applied Physics 51 (11R), 111001, 2012
Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth
Y Dong, W Wang, S Xu, D Lei, X Gong, X Guo, H Wang, SY Lee, WK Loke, ...
Optics Express 25 (14), 15818-15827, 2017
Germanium-on-silicon nitride waveguides for mid-infrared integrated photonics
W Li, P Anantha, S Bao, KH Lee, X Guo, T Hu, L Zhang, H Wang, R Soref, ...
Applied physics letters 109 (24), 241101, 2016
High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate
S Xu, W Wang, YC Huang, Y Dong, S Masudy-Panah, H Wang, X Gong, ...
Optics express 27 (4), 5798-5813, 2019
Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate
S Arulkumaran, ZH Liu, GI Ng, WC Cheong, R Zeng, J Bu, H Wang, ...
Thin Solid Films 515 (10), 4517-4521, 2007
Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal–oxide–semiconductor-compatible non-gold metal stack
S Arulkumaran, GI Ng, S Vicknesh, H Wang, KS Ang, CM Kumar, KL Teo, ...
Applied Physics Express 6 (1), 016501, 2012
Large‐Area Atomic Layers of the Charge‐Density‐Wave Conductor TiSe2
H Wang, Y Chen, M Duchamp, Q Zeng, X Wang, SH Tsang, H Li, L Jing, ...
Advanced Materials 30 (8), 1704382, 2018
Silicon-on-insulator waveguide devices for broadband mid-infrared photonics
B Dong, X Guo, CP Ho, B Li, H Wang, C Lee, X Luo, GQ Lo
IEEE Photonics Journal 9 (3), 1-10, 2017
Fabrication of efficient microaxicon by direct electron-beam lithography for long nondiffracting distance of Bessel beams for optical manipulation
WC Cheong, BPS Ahluwalia, XC Yuan, LS Zhang, H Wang, HB Niu, ...
Applied Physics Letters 87 (2), 024104, 2005
Localized emission from laser-irradiated defects in 2D hexagonal boron nitride
S Hou, MD Birowosuto, S Umar, MA Anicet, RY Tay, P Coquet, BK Tay, ...
2D Materials 5 (1), 015010, 2017
Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy
HQ Zheng, K Radhakrishnan, H Wang, KH Yuan, SF Yoon, GI Ng
Applied Physics Letters 77 (6), 869-871, 2000
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