| Low-threshold optically pumped lasing in highly strained germanium nanowires S Bao, D Kim, C Onwukaeme, S Gupta, K Saraswat, KH Lee, Y Kim, D Min, ... Nature communications 8 (1), 1-7, 2017 | 121 | 2017 |
| Waveguide-integrated black phosphorus photodetector for mid-infrared applications L Huang, B Dong, X Guo, Y Chang, N Chen, X Huang, W Liao, C Zhu, ... ACS nano 13 (1), 913-921, 2018 | 117 | 2018 |
| Periodic organic–inorganic halide perovskite microplatelet arrays on silicon substrates for room‐temperature lasing X Liu, L Niu, C Wu, C Cong, H Wang, Q Zeng, H He, Q Fu, W Fu, T Yu, ... Advanced Science 3 (11), 1600137, 2016 | 104 | 2016 |
| Direct electron-beam writing of continuous spiral phase plates in negative resist with high power efficiency for optical manipulation WC Cheong, WM Lee, XC Yuan, LS Zhang, K Dholakia, H Wang Applied physics letters 85 (23), 5784-5786, 2004 | 102 | 2004 |
| High-speed silicon modulators for the 2 μm wavelength band W Cao, D Hagan, DJ Thomson, M Nedeljkovic, CG Littlejohns, A Knights, ... Optica 5 (9), 1055-1062, 2018 | 101 | 2018 |
| Ultra-broadband on-chip twisted light emitter for optical communications Z Xie, T Lei, F Li, H Qiu, Z Zhang, H Wang, C Min, L Du, Z Li, X Yuan Light: Science & Applications 7 (4), 18001-18001, 2018 | 91 | 2018 |
| Design and fabrication of a double-axicon for generation of tailorable self-imaged three-dimensional intensity voids BPS Ahluwalia, WC Cheong, XC Yuan, LS Zhang, SH Tao, J Bu, H Wang Optics letters 31 (7), 987-989, 2006 | 90 | 2006 |
| Inorganic, organic, and perovskite halides with nanotechnology for high–light yield X-and γ-ray scintillators F Maddalena, L Tjahjana, A Xie, S Zeng, H Wang, P Coquet, ... Crystals 9 (2), 88, 2019 | 84 | 2019 |
| Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon G Ye, H Wang, S Arulkumaran, GI Ng, R Hofstetter, Y Li, MJ Anand, ... Applied Physics Letters 103 (14), 142109, 2013 | 79 | 2013 |
| Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si (111) substrate S Arulkumaran, GI Ng, S Vicknesh, H Wang, KS Ang, JPY Tan, VK Lin, ... Japanese Journal of Applied Physics 51 (11R), 111001, 2012 | 77 | 2012 |
| Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth Y Dong, W Wang, S Xu, D Lei, X Gong, X Guo, H Wang, SY Lee, WK Loke, ... Optics Express 25 (14), 15818-15827, 2017 | 70 | 2017 |
| Germanium-on-silicon nitride waveguides for mid-infrared integrated photonics W Li, P Anantha, S Bao, KH Lee, X Guo, T Hu, L Zhang, H Wang, R Soref, ... Applied physics letters 109 (24), 241101, 2016 | 69 | 2016 |
| High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate S Xu, W Wang, YC Huang, Y Dong, S Masudy-Panah, H Wang, X Gong, ... Optics express 27 (4), 5798-5813, 2019 | 64 | 2019 |
| Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate S Arulkumaran, ZH Liu, GI Ng, WC Cheong, R Zeng, J Bu, H Wang, ... Thin Solid Films 515 (10), 4517-4521, 2007 | 64 | 2007 |
| Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal–oxide–semiconductor-compatible non-gold metal stack S Arulkumaran, GI Ng, S Vicknesh, H Wang, KS Ang, CM Kumar, KL Teo, ... Applied Physics Express 6 (1), 016501, 2012 | 60 | 2012 |
| Large‐Area Atomic Layers of the Charge‐Density‐Wave Conductor TiSe2 H Wang, Y Chen, M Duchamp, Q Zeng, X Wang, SH Tsang, H Li, L Jing, ... Advanced Materials 30 (8), 1704382, 2018 | 57 | 2018 |
| Silicon-on-insulator waveguide devices for broadband mid-infrared photonics B Dong, X Guo, CP Ho, B Li, H Wang, C Lee, X Luo, GQ Lo IEEE Photonics Journal 9 (3), 1-10, 2017 | 55 | 2017 |
| Fabrication of efficient microaxicon by direct electron-beam lithography for long nondiffracting distance of Bessel beams for optical manipulation WC Cheong, BPS Ahluwalia, XC Yuan, LS Zhang, H Wang, HB Niu, ... Applied Physics Letters 87 (2), 024104, 2005 | 51 | 2005 |
| Localized emission from laser-irradiated defects in 2D hexagonal boron nitride S Hou, MD Birowosuto, S Umar, MA Anicet, RY Tay, P Coquet, BK Tay, ... 2D Materials 5 (1), 015010, 2017 | 50 | 2017 |
| Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy HQ Zheng, K Radhakrishnan, H Wang, KH Yuan, SF Yoon, GI Ng Applied Physics Letters 77 (6), 869-871, 2000 | 48 | 2000 |
Geok Ing NgNanyang Technological UniversityE-mail confirmado em ntu.edu.sg
