Ronald A Arif, Ph.D.
Ronald A Arif, Ph.D.
Lehigh University, II-VI, Cree, Veeco
E-mail confirmado em veeco.com
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Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes
RA Arif, YK Ee, N Tansu
Applied Physics Letters 91 (9), 091110, 2007
3112007
Self-consistent analysis of strain-compensated InGaN–AlGaN quantum wells for lasers and light-emitting diodes
H Zhao, RA Arif, YK Ee, N Tansu
IEEE Journal of Quantum Electronics 45 (1), 66-78, 2008
2262008
Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes
H Zhao, G Liu, RA Arif, N Tansu
Solid-State Electronics 54 (10), 1119-1124, 2010
2252010
Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes
H Zhao, G Liu, J Zhang, RA Arif, N Tansu
Journal of Display Technology 9 (4), 212-225, 2013
1762013
Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile
H Zhao, G Liu, XH Li, GS Huang, JD Poplawsky, ST Penn, V Dierolf, ...
Applied Physics Letters 95 (6), 061104, 2009
1762009
Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using /polystyrene microlens arrays
YK Ee, RA Arif, N Tansu, P Kumnorkaew, JF Gilchrist
Applied Physics Letters 91 (22), 221107, 2007
1612007
Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures
YK Ee, P Kumnorkaew, RA Arif, H Tong, JF Gilchrist, N Tansu
Optics Express 17 (16), 13747-13757, 2009
1492009
Spontaneous emission and characteristics of staggered InGaN quantum-well light-emitting diodes
RA Arif, H Zhao, YK Ee, N Tansu
IEEE Journal of Quantum Electronics 44 (6), 573-580, 2008
1472008
Optimization of light extraction efficiency of III-nitride LEDs with self-assembled colloidal-based microlenses
YK Ee, P Kumnorkaew, RA Arif, H Tong, H Zhao, JF Gilchrist, N Tansu
IEEE Journal of Selected Topics in Quantum Electronics 15 (4), 1218-1225, 2009
1422009
Design analysis of staggered InGaN quantum wells light-emitting diodes at 500–540 nm
H Zhao, RA Arif, N Tansu
IEEE Journal of selected topics in quantum electronics 15 (4), 1104-1114, 2009
1382009
Type-II InGaN-GaNAs quantum wells for lasers applications
RA Arif, H Zhao, N Tansu
Applied Physics Letters 92 (1), 011104, 2008
1242008
Self-consistent gain analysis of type-II ‘’ InGaN–GaNAs quantum well lasers
H Zhao, RA Arif, N Tansu
Journal of Applied physics 104 (4), 043104, 2008
1152008
Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime
HP Zhao, GY Liu, XH Li, RA Arif, GS Huang, JD Poplawsky, ST Penn, ...
IET optoelectronics 3 (6), 283-295, 2009
902009
Optical gain analysis of strain-compensated InGaN–AlGaN quantum well active regions for lasers emitting at 420–500 nm
H Zhao, RA Arif, YK Ee, N Tansu
Optical and quantum electronics 40 (5), 301-306, 2008
612008
Self-assembled InGaN quantum dots on GaN emitting at 520 nm grown by metalorganic vapor-phase epitaxy
YK Ee, H Zhao, RA Arif, M Jamil, N Tansu
Journal of Crystal Growth 310 (7-9), 2320-2325, 2008
452008
MOVPE of InN films on GaN templates grown on sapphire and silicon (111) substrates
M Jamil, RA Arif, YK Ee, H Tong, JB Higgins, N Tansu
physica status solidi (a) 205 (7), 1619-1624, 2008
382008
Diffusion-driven and excitation-dependent recombination rate in blue InGaN/GaN quantum well structures
R Aleksiejūnas, K Gelžinytė, S Nargelas, K Jarašiūnas, M Vengris, ...
Applied Physics Letters 104 (2), 022114, 2014
292014
Gallium nitride-based device and method
N Tansu, RA Arif, YK Ee
US Patent 7,842,531, 2010
262010
Nanostructure Engineering of InGaN-Based Active Regions for Improved III-Nitride Gain Media Emitting at 420-550 nm
RA Arif, YK Ee, N Tansu
Phys. Stat. Sol.(C) 205 (1), 96-100, 2008
182008
Efficient light extraction method and device
N Tansu, YK Ee, JF Gilchrist, P Kumnorkaew, RA Arif
US Patent 8,076,667, 2011
162011
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