Theodore D Moustakas

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Roberto PaiellaProfessor of Electrical and Computer Engineering, Boston UniversityE-mail confirmado em bu.edu
Anirban BhattacharyyaUniversity of CalcuttaE-mail confirmado em caluniv.ac.in
Hock M. NgOctopus Innovation PartnersE-mail confirmado em octoip.com
Karl LudwigProfessor of Physics, Boston UniversityE-mail confirmado em bu.edu
Eleftherios IliopoulosDepartment of Physics, University of Crete & IESL-FORTHE-mail confirmado em physics.uoc.gr
Emmanouil DimakisGroup leader, Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum DresdenE-mail confirmado em hzdr.de
Yitao LiaoBoston UniversityE-mail confirmado em bu.edu
Dimitris KorakakisE-mail confirmado em mail.wvu.edu
Marco FanciulliProfessor of Condensed Matter Physics, University of Milano BicoccaE-mail confirmado em unimib.it
Piotr PerlinInstitute of High Pressure PhysicsE-mail confirmado em unipress.waw.pl
Henryk TeisseyreInstitute of Physics of the Polish Academy of SciencesE-mail confirmado em ifpan.edu.pl
Luca Dal NegroProfessor of Electrical and Computer Engineering, Boston UniversityE-mail confirmado em bu.edu
Michał LeszczynskiE-mail confirmado em unipress.waw.pl
Wei ZhangBoston University Photonics CenterE-mail confirmado em physics.bu.edu
Soumendra BasuAssociate Division Head, Materials Science & Engineering; Professor, Mechanical Engineering, BostonE-mail confirmado em bu.edu
Papo Chen, T.C. Chen, Tai-Chou Che...Boston UniversityE-mail confirmado em amat.com
Enrico BellottiBoston University Georgia Institute of TechnologyE-mail confirmado em bu.edu
HAIDING SUNProfessor of University of Science and Technology of ChinaE-mail confirmado em ustc.edu.cn
Emanuele Francesco PecoraTechnology ManagerE-mail confirmado em hq.doe.gov
Cristian StagarescuOptical Engineer SPE (Senior Principal Engineer), Photonic Devices Development, MACOME-mail confirmado em macom.com

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Theodore D Moustakas

Boston University, Electrical and Computer Engineering Department

E-mail confirmado em bu.edu - Página inicial

nitride semiconductors amorphous semiconductors III-V compounds diamond thin films and metallic


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Scattering of electrons at threading dislocations in GaN NG Weimann, LF Eastman, D Doppalapudi, HM Ng, TD Moustakas Journal of Applied Physics 83 (7), 3656-3659, 1998	806	1998
Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition R Singh, D Doppalapudi, TD Moustakas, LT Romano Applied Physics Letters 70 (9), 1089-1091, 1997	638	1997
Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon T Lei, TD Moustakas, RJ Graham, Y He, SJ Berkowitz Journal of Applied Physics 71 (10), 4933-4943, 1992	561	1992
The role of dislocation scattering in n-type GaN films HM Ng, D Doppalapudi, TD Moustakas, NG Weimann, LF Eastman Applied physics letters 73 (6), 821-823, 1998	556	1998
Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon T Lei, M Fanciulli, RJ Molnar, TD Moustakas, RJ Graham, J Scanlon Applied physics letters 59 (8), 944-946, 1991	554	1991
Metal contacts to gallium nitride JS Foresi, TD Moustakas Applied physics letters 62 (22), 2859-2861, 1993	525	1993
Towards the identification of the dominant donor in GaN P Perlin, T Suski, H Teisseyre, M Leszczynski, I Grzegory, J Jun, ... Physical review letters 75 (2), 296, 1995	412	1995
Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates T Lei, KF Ludwig Jr, TD Moustakas Journal of applied physics 74 (7), 4430-4437, 1993	361	1993
Growth of GaN by ECR-assisted MBE TD Moustakas, T Lei, RJ Molnar Physica B: Condensed Matter 185 (1-4), 36-49, 1993	338	1993
Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy D Doppalapudi, SN Basu, KF Ludwig Jr, TD Moustakas Journal of applied physics 84 (3), 1389-1395, 1998	336	1998
Optical Devices Featuring textured semiconductor layers JSC TD Moustakas US Patent 8,035,113, 2011	333	2011
Gallium Nitride (GaN) JI Pankove, TD Moustakas (No Title), 1998	333	1998
Doping, Schottky barrier and p n junction formation in amorphous germanium and silicon by rf sputtering W Paul, AJ Lewis, GAN Connell, TD Moustakas Solid State Communications 20 (10), 969-972, 1976	314	1976
Thermal expansion of gallium nitride M Leszczynski, T Suski, H Teisseyre, P Perlin, I Grzegory, J Jun, ... Journal of applied physics 76 (8), 4909-4911, 1994	293	1994
Mechanism of yellow luminescence in GaN T Suski, P Perlin, H Teisseyre, M Leszczyński, I Grzegory, J Jun, ... Applied physics letters 67 (15), 2188-2190, 1995	286	1995
Effect of nitrogen on the growth of diamond films S Jin, TD Moustakas Applied Physics Letters 65 (4), 403-405, 1994	284	1994
Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer H Teisseyre, P Perlin, T Suski, I Grzegory, S Porowski, J Jun, A Pietraszko, ... Journal of Applied Physics 76 (4), 2429-2434, 1994	251	1994
Growth of gallium nitride by electron‐cyclotron resonance plasma‐assisted molecular‐beam epitaxy: The role of charged species RJ Molnar, TD Moustakas Journal of Applied Physics 76 (8), 4587-4595, 1994	236	1994
Electron transport mechanism in gallium nitride RJ Molnar, T Lei, TD Moustakas Applied physics letters 62 (1), 72-74, 1993	236	1993
Blue‐violet light emitting gallium nitride p‐n junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy RJ Molnar, R Singh, TD Moustakas Applied physics letters 66 (3), 268-270, 1995	218	1995

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