Filippo Giubileo
Filippo Giubileo
Researcher at CNR-SPIN Salerno
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Citado por
Two-Gap State Density in : A True Bulk Property Or A Proximity Effect?
F Giubileo, D Roditchev, W Sacks, R Lamy, DX Thanh, J Klein, S Miraglia, ...
Physical review letters 87 (17), 177008, 2001
Hysteresis in the transfer characteristics of MoS2 transistors
A Di Bartolomeo, L Genovese, F Giubileo, L Iemmo, G Luongo, T Foller, ...
2D Materials 5 (1), 015014, 2017
The role of contact resistance in graphene field-effect devices
F Giubileo, A Di Bartolomeo
Progress in Surface Science 92 (3), 143-175, 2017
Electrical transport and persistent photoconductivity in monolayer MoS2 phototransistors
A Di Bartolomeo, L Genovese, T Foller, F Giubileo, G Luongo, L Croin, ...
Nanotechnology 28 (21), 214002, 2017
Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors
A Di Bartolomeo, A Grillo, F Urban, L Iemmo, F Giubileo, G Luongo, ...
Advanced Functional Materials 28 (28), 1800657, 2018
Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device
A Di Bartolomeo, F Giubileo, G Luongo, L Iemmo, N Martucciello, G Niu, ...
2D Materials 4 (1), 015024, 2016
Field emission from single and few-layer graphene flakes
S Santandrea, F Giubileo, V Grossi, S Santucci, M Passacantando, ...
Applied Physics Letters 98 (16), 163109, 2011
Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect
A Di Bartolomeo, G Luongo, F Giubileo, N Funicello, G Niu, T Schroeder, ...
2D Materials 4 (2), 025075, 2017
Multiwalled carbon nanotube films as small-sized temperature sensors
A Di Bartolomeo, M Sarno, F Giubileo, C Altavilla, L Iemmo, S Piano, ...
Journal of Applied Physics 105 (6), 064518, 2009
A local field emission study of partially aligned carbon-nanotubes by atomic force microscope probe
A Di Bartolomeo, A Scarfato, F Giubileo, F Bobba, M Biasiucci, AM Cucolo, ...
Carbon 45 (15), 2957-2971, 2007
Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics
A Di Bartolomeo, F Giubileo, F Romeo, P Sabatino, G Carapella, L Iemmo, ...
Nanotechnology 26 (47), 475202, 2015
Charge transfer and partial pinning at the contacts as the origin of a double dip in the transfer characteristics of graphene-based field-effect transistors
A Di Bartolomeo, F Giubileo, S Santandrea, F Romeo, R Citro, ...
Nanotechnology 22 (27), 275702, 2011
A WSe 2 vertical field emission transistor
A Di Bartolomeo, F Urban, M Passacantando, N McEvoy, L Peters, ...
Nanoscale 11 (4), 1538-1548, 2019
Leakage and field emission in side-gate graphene field effect transistors
A Di Bartolomeo, F Giubileo, L Iemmo, F Romeo, S Russo, S Unal, ...
Applied Physics Letters 109 (2), 023510, 2016
Electrical properties and memory effects of field-effect transistors from networks of single-and double-walled carbon nanotubes
A Di Bartolomeo, M Rinzan, AK Boyd, Y Yang, L Guadagno, F Giubileo, ...
Nanotechnology 21 (11), 115204, 2010
Field emission from carbon nanostructures
F Giubileo, A Di Bartolomeo, L Iemmo, G Luongo, F Urban
Applied Sciences 8 (4), 526, 2018
Field emission from a selected multiwall carbon nanotube
M Passacantando, F Bussolotti, S Santucci, A Di Bartolomeo, F Giubileo, ...
Nanotechnology 19 (39), 395701, 2008
Effect of back-gate on contact resistance and on channel conductance in graphene-based field-effect transistors
A Di Bartolomeo, S Santandrea, F Giubileo, F Romeo, M Petrosino, ...
Diamond and Related Materials 38, 19-23, 2013
Transport and field emission properties of MoS2 bilayers
F Urban, M Passacantando, F Giubileo, L Iemmo, A Di Bartolomeo
Nanomaterials 8 (3), 151, 2018
IV and CV characterization of a high-responsivity graphene/silicon photodiode with embedded MOS capacitor
G Luongo, F Giubileo, L Genovese, L Iemmo, N Martucciello, ...
Nanomaterials 7 (7), 158, 2017
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