Filippo Giubileo

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Antonio Di BartolomeoSalerno UniversityE-mail confirmado em unisa.it
Anna Maria CUCOLOUniversità di salernoE-mail confirmado em unisa.it
Maurizio PassacantandoAssociate Professor, University of L'Aquila - ItalyE-mail confirmado em univaq.it
Giuseppe LUONGODottorando presso il Dipartimento di Fisica "E.R. Caianiello", Università di SalernoE-mail confirmado em unisa.it
Francesca URBANInstitut de Science et d'Ingénierie Supramoléculaires (I.S.I.S.) Université de Strasbourg & CNRSE-mail confirmado em unistra.fr
Dimitri RoditchevLPEM ESPCI-ParisTech, PSL, CNRS, UPMC, Sorbonne UniversityE-mail confirmado em espci.fr
Alessandro GRILLOPhD student, Physics department, Salerno UniversityE-mail confirmado em unisa.it
Samanta PianoAssistant Professor in Metrology, University of NottinghamE-mail confirmado em nottingham.ac.uk
William SacksSorbonne University Science and EngineeringE-mail confirmado em upmc.fr
Thomas SchroederLeibniz-Institut für Kristallzüchtung (IKZ); Professor in Physics at Humboldt Universität zu BerlinE-mail confirmado em ikz-berlin.de
Grzegorz LupinaIHPE-mail confirmado em ihp-microelectronics.com
Francesco RomeoUniversity of Salerno, ItalyE-mail confirmado em sa.infn.it
Roberta CitroUniversity of SalernoE-mail confirmado em sa.infn.it
Gang NiuXi'an Jiaotong UniversityE-mail confirmado em mail.xjtu.edu.cn
Paola BarbaraProfessor of Physics, Georgetown UniversityE-mail confirmado em physics.georgetown.edu
Anthony K BoydU. S. Naval Research LaboratoryE-mail confirmado em georgetown.edu
Mohamed RinzanGeorgetown universityE-mail confirmado em physics.georgetown.edu
Nikolai D. ZhigadloFounder & Owner of CrystMat, Zurich, Switzerland
Yanfei YangGraphene Waves

Filippo Giubileo

Researcher at CNR-SPIN Salerno

E-mail confirmado em spin.cnr.it - Página inicial

Condensed matter physics


Título Ordenar por citações Ordenar por ano Ordenar por título	Citado por Citado por	Ano
Two-Gap State Density in : A True Bulk Property Or A Proximity Effect? F Giubileo, D Roditchev, W Sacks, R Lamy, DX Thanh, J Klein, S Miraglia, ... Physical review letters 87 (17), 177008, 2001	453	2001
Hysteresis in the transfer characteristics of MoS2 transistors A Di Bartolomeo, L Genovese, F Giubileo, L Iemmo, G Luongo, T Foller, ... 2D Materials 5 (1), 015014, 2017	140	2017
The role of contact resistance in graphene field-effect devices F Giubileo, A Di Bartolomeo Progress in Surface Science 92 (3), 143-175, 2017	129	2017
Electrical transport and persistent photoconductivity in monolayer MoS2 phototransistors A Di Bartolomeo, L Genovese, T Foller, F Giubileo, G Luongo, L Croin, ... Nanotechnology 28 (21), 214002, 2017	120	2017
Asymmetric Schottky Contacts in Bilayer MoS₂ Field Effect Transistors A Di Bartolomeo, A Grillo, F Urban, L Iemmo, F Giubileo, G Luongo, ... Advanced Functional Materials 28 (28), 1800657, 2018	103	2018
Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device A Di Bartolomeo, F Giubileo, G Luongo, L Iemmo, N Martucciello, G Niu, ... 2D Materials 4 (1), 015024, 2016	101	2016
Field emission from single and few-layer graphene flakes S Santandrea, F Giubileo, V Grossi, S Santucci, M Passacantando, ... Applied Physics Letters 98 (16), 163109, 2011	98	2011
Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect A Di Bartolomeo, G Luongo, F Giubileo, N Funicello, G Niu, T Schroeder, ... 2D Materials 4 (2), 025075, 2017	96	2017
Multiwalled carbon nanotube films as small-sized temperature sensors A Di Bartolomeo, M Sarno, F Giubileo, C Altavilla, L Iemmo, S Piano, ... Journal of Applied Physics 105 (6), 064518, 2009	94	2009
A local field emission study of partially aligned carbon-nanotubes by atomic force microscope probe A Di Bartolomeo, A Scarfato, F Giubileo, F Bobba, M Biasiucci, AM Cucolo, ... Carbon 45 (15), 2957-2971, 2007	85	2007
Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics A Di Bartolomeo, F Giubileo, F Romeo, P Sabatino, G Carapella, L Iemmo, ... Nanotechnology 26 (47), 475202, 2015	83	2015
Charge transfer and partial pinning at the contacts as the origin of a double dip in the transfer characteristics of graphene-based field-effect transistors A Di Bartolomeo, F Giubileo, S Santandrea, F Romeo, R Citro, ... Nanotechnology 22 (27), 275702, 2011	73	2011
A WSe 2 vertical field emission transistor A Di Bartolomeo, F Urban, M Passacantando, N McEvoy, L Peters, ... Nanoscale 11 (4), 1538-1548, 2019	69	2019
Leakage and field emission in side-gate graphene field effect transistors A Di Bartolomeo, F Giubileo, L Iemmo, F Romeo, S Russo, S Unal, ... Applied Physics Letters 109 (2), 023510, 2016	66	2016
Electrical properties and memory effects of field-effect transistors from networks of single-and double-walled carbon nanotubes A Di Bartolomeo, M Rinzan, AK Boyd, Y Yang, L Guadagno, F Giubileo, ... Nanotechnology 21 (11), 115204, 2010	65	2010
Field emission from carbon nanostructures F Giubileo, A Di Bartolomeo, L Iemmo, G Luongo, F Urban Applied Sciences 8 (4), 526, 2018	62	2018
Field emission from a selected multiwall carbon nanotube M Passacantando, F Bussolotti, S Santucci, A Di Bartolomeo, F Giubileo, ... Nanotechnology 19 (39), 395701, 2008	62	2008
Effect of back-gate on contact resistance and on channel conductance in graphene-based field-effect transistors A Di Bartolomeo, S Santandrea, F Giubileo, F Romeo, M Petrosino, ... Diamond and Related Materials 38, 19-23, 2013	60	2013
Transport and field emission properties of MoS2 bilayers F Urban, M Passacantando, F Giubileo, L Iemmo, A Di Bartolomeo Nanomaterials 8 (3), 151, 2018	56	2018
IV and CV characterization of a high-responsivity graphene/silicon photodiode with embedded MOS capacitor G Luongo, F Giubileo, L Genovese, L Iemmo, N Martucciello, ... Nanomaterials 7 (7), 158, 2017	56	2017

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