Steep-slope hysteresis-free negative capacitance MoS2 transistors M Si, CJ Su, C Jiang, NJ Conrad, H Zhou, KD Maize, G Qiu, CT Wu, ...
Nature nanotechnology 13 (1), 24-28, 2018
347 2018 High-Performance Depletion/Enhancement-ode H Zhou, M Si, S Alghamdi, G Qiu, L Yang, DY Peide
IEEE Electron Device Letters 38 (1), 103-106, 2016
234 2016 β-Ga2 O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect H Zhou, K Maize, G Qiu, A Shakouri, PD Ye
Applied Physics Letters 111 (9), 092102, 2017
160 2017 Controlled growth of a large-size 2D selenium nanosheet and its electronic and optoelectronic applications J Qin, G Qiu, J Jian, H Zhou, L Yang, A Charnas, DY Zemlyanov, CY Xu, ...
ACS nano 11 (10), 10222-10229, 2017
130 2017 Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with ZH Liu, GI Ng, H Zhou, S Arulkumaran, YKT Maung
Applied Physics Letters 98 (11), 113506, 2011
124 2011 Improved subthreshold swing and short channel effect in FDSOI n-channel negative capacitance field effect transistors D Kwon, K Chatterjee, AJ Tan, AK Yadav, H Zhou, AB Sachid, R Dos Reis, ...
IEEE Electron Device Letters 39 (2), 300-303, 2017
117 2017 Field-Plated Lateral2 O3 Schottky Barrier Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2 Z Hu, H Zhou, Q Feng, J Zhang, C Zhang, K Dang, Y Cai, Z Feng, Y Gao, ...
IEEE Electron Device Letters 39 (10), 1564-1567, 2018
108 2018 Al2O3/ H Zhou, S Alghmadi, M Si, G Qiu, DY Peide
IEEE Electron Device Letters 37 (11), 1411-1414, 2016
88 2016 Temperature-dependent forward gate current transport in atomic-layer-deposited ZH Liu, GI Ng, S Arulkumaran, YKT Maung, H Zhou
Applied Physics Letters 98 (16), 163501, 2011
77 2011 Observation of Optical and Electrical In-Plane Anisotropy in High-Mobility Few-Layer ZrTe5 G Qiu, Y Du, A Charnas, H Zhou, S Jin, Z Luo, DY Zemlyanov, X Xu, ...
Nano Letters 16 (12), 7364-7369, 2016
67 2016 Performance enhancement of black phosphorus field-effect transistors by chemical doping Y Du, L Yang, H Zhou, DY Peide
IEEE Electron Device Letters 37 (4), 429-432, 2016
62 2016 Thermodynamic Studies of β-Ga2 O3 Nanomembrane Field-Effect Transistors on a Sapphire Substrate H Zhou, K Maize, J Noh, A Shakouri, PD Ye
ACS omega 2 (11), 7723-7729, 2017
58 2017 High-Performance Vertical 2 O3 Schottky Barrier Diode With Implanted Edge Termination H Zhou, Q Yan, J Zhang, Y Lv, Z Liu, Y Zhang, K Dang, P Dong, Z Feng, ...
IEEE Electron Device Letters 40 (11), 1788-1791, 2019
50 2019 Lateral β-Ga2 O3 MOSFETs With High Power Figure of Merit of 277 MW/cm2 Y Lv, H Liu, X Zhou, Y Wang, X Song, Y Cai, Q Yan, C Wang, S Liang, ...
IEEE Electron Device Letters 41 (4), 537-540, 2020
43 2020 A 1.9-kV/2.61-m2 Lateral GaN Schottky Barrier Diode on Silicon Substrate With Tungsten Anode and Low Turn-ON Voltage of 0.35 V T Zhang, J Zhang, H Zhou, T Chen, K Zhang, Z Hu, Z Bian, K Dang, ...
IEEE Electron Device Letters 39 (10), 1548-1551, 2018
43 2018 Charge Trapping in Al2 O3 /2 O3 -Based MOS Capacitors MA Bhuiyan, H Zhou, R Jiang, EX Zhang, DM Fleetwood, DY Peide, ...
IEEE Electron Device Letters 39 (7), 1022-1025, 2018
42 2018 High-performance InAlN/GaN MOSHEMTs enabled by atomic layer epitaxy MgCaO as gate dielectric H Zhou, X Lou, NJ Conrad, M Si, H Wu, S Alghamdi, S Guo, RG Gordon, ...
IEEE Electron Device Letters 37 (5), 556-559, 2016
41 2016 A review of the most recent progresses of state-of-art gallium oxide power devices H Zhou, J Zhang, C Zhang, Q Feng, S Zhao, P Ma, Y Hao
Journal of Semiconductors 40 (1), 011803, 2019
40 2019 Negative capacitance, n-channel, Si FinFETs: Bi-directional sub-60 mV/dec, negative DIBL, negative differential resistance and improved short channel effect H Zhou, D Kwon, AB Sachid, Y Liao, K Chatterjee, AJ Tan, AK Yadav, ...
2018 IEEE Symposium on VLSI Technology, 53-54, 2018
40 2018 Lateral 2 O3 Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV Z Hu, H Zhou, K Dang, Y Cai, Z Feng, Y Gao, Q Feng, J Zhang, Y Hao
IEEE Journal of the Electron Devices Society 6, 815-820, 2018
39 2018 
Peide YeRichard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering, Purdue UniversityE-mail confirmado em purdue.edu
