| Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures R Lingaparthi, N Dharmarasu, K Radhakrishnan, A Ranjan, TLA Seah, ... Applied Physics Letters 118 (12), 2021 | 9 | 2021 |
| On the practical limitations for the generation of Gunn oscillations in highly doped GaN diodes S García-Sánchez, M Abou Daher, M Lesecq, L Huo, R Lingaparthi, ... IEEE Transactions on Electron Devices, 2023 | 1 | 2023 |
| THz Oscillation in Doped-GaN Based Planar Gunn Diode with the T-shape Channel L Huo, R Lingaparthi, K Shabdurasulov, N Dharmarasu, K Radhakrishnan, ... 2023 18th European Microwave Integrated Circuits Conference (EuMIC), 289-292, 2023 | | 2023 |
| Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—Experimental evidence of the hole … R Lingaparthi, N Dharmarasu, K Radhakrishnan, L Huo Applied Physics Letters 123 (9), 2023 | | 2023 |
| Surface morphology evolution of N-polar GaN on SiC for HEMT heterostructures grown by plasma-assisted molecular beam epitaxy L Huo, R Lingaparthi, N Dharmarasu, K Radhakrishnan, C Chan Journal of Physics D: Applied Physics 56 (34), 345302, 2023 | | 2023 |
| Chemical-mechanical Polishing of N-polar GaN for GaN HEMT on Diamond Bonding A Ranjan, R Lingaparthi, L Huo, C Chan, N Dharmarasu, ... 2022 IEEE 24th Electronics Packaging Technology Conference (EPTC), 443-446, 2022 | | 2022 |
| Development of Hall Effect Sensor on AlGaN/GaN FinFET Structure L Huo, YC Liang, X Gong 2019 Compound Semiconductor Week (CSW), 1-1, 2019 | | 2019 |
