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Randolph E. Elmquist
Randolph E. Elmquist
Physicist, NIST
E-mail confirmado em nist.gov
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NBS determination of the fine-structure constant, and of the quantized Hall resistance and Josephson frequency-to-voltage quotient in SI units
ME Cage, RF Dziuba, RE Elmquist, BF Field, GR Jones, PT Olsen, ...
ieee Transactions on Instrumentation and Measurement 38 (2), 284-289, 1989
1441989
Part-per-million quantization and current-induced breakdown of the quantum anomalous Hall effect
EJ Fox, IT Rosen, Y Yang, GR Jones, RE Elmquist, X Kou, L Pan, ...
Physical Review B 98 (7), 075145, 2018
1032018
NIST comparison of the quantized Hall resistance and the realization of the SI ohm through the calculable capacitor
AM Jeffery, RE Elmquist, LH Lee, JQ Shields, RF Dziuba
IEEE transactions on instrumentation and measurement 46 (2), 264-268, 1997
1031997
Low carrier density epitaxial graphene devices on SiC
Y Yang, LI Huang, Y Fukuyama, FH Liu, MA Real, P Barbara, CT Liang, ...
Small 11 (1), 90-95, 2015
732015
Determination of the von Klitzing constant and the fine-structure constant through a comparison of the quantized Hall resistance and the ohm derived from the NIST calculable …
A Jeffery, RE Elmquist, JQ Shields, LH Lee, ME Cage, SH Shields, ...
Metrologia 35 (2), 83, 1998
711998
Epitaxial graphene homogeneity and quantum Hall effect in millimeter-scale devices
Y Yang, G Cheng, P Mende, IG Calizo, RM Feenstra, C Chuang, CW Liu, ...
Carbon 115, 229-236, 2017
682017
The quantum Hall effect in the era of the new SI
AF Rigosi, RE Elmquist
Semiconductor science and technology 34 (9), 093004, 2019
612019
Next-generation crossover-free quantum Hall arrays with superconducting interconnections
M Kruskopf, AF Rigosi, AR Panna, M Marzano, D Patel, H Jin, DB Newell, ...
Metrologia 56 (6), 065002, 2019
592019
A measurement of the NBS electrical watt in SI units
PT Olsen, RE Elmquist, WD Phillips, ER Williams, GR Jones, VE Bower
ieee Transactions on Instrumentation and Measurement 38 (2), 238-244, 1989
571989
Two-terminal and multi-terminal designs for next-generation quantized Hall resistance standards: contact material and geometry
M Kruskopf, AF Rigosi, AR Panna, DK Patel, H Jin, M Marzano, M Berilla, ...
IEEE transactions on electron devices 66 (9), 3973-3977, 2019
562019
Gateless and reversible Carrier density tunability in epitaxial graphene devices functionalized with chromium tricarbonyl
AF Rigosi, M Kruskopf, HM Hill, H Jin, BY Wu, PE Johnson, S Zhang, ...
Carbon 142, 468-474, 2019
522019
Epitaxial graphene for quantum resistance metrology
M Kruskopf, RE Elmquist
Metrologia 55 (4), R27, 2018
512018
Quantum Hall effect on centimeter scale chemical vapor deposited graphene films
T Shen, W Wu, Q Yu, CA Richter, R Elmquist, D Newell, YP Chen
Applied Physics Letters 99 (23), 2011
502011
Graphene devices for tabletop and high-current quantized Hall resistance standards
AF Rigosi, AR Panna, SU Payagala, M Kruskopf, ME Kraft, GR Jones, ...
IEEE transactions on instrumentation and measurement 68 (6), 1870-1878, 2018
482018
NIST measurement service for DC standard resistors
RE Elmquist, DG Jarrett, GR Jones, ME Kraft, SH Shields, RF Dziuba
NIST Technical Note 1458, 75, 2003
482003
Graphene epitaxial growth on SiC (0001) for resistance standards
MA Real, EA Lass, FH Liu, T Shen, GR Jones, JA Soons, DB Newell, ...
IEEE Transactions on Instrumentation and Measurement 62 (6), 1454-1460, 2013
472013
Comparison between NIST graphene and AIST GaAs quantized Hall devices
T Oe, AF Rigosi, M Kruskopf, BY Wu, HY Lee, Y Yang, RE Elmquist, ...
IEEE transactions on instrumentation and measurement 69 (6), 3103-3108, 2019
452019
Towards epitaxial graphene p-n junctions as electrically programmable quantum resistance standards
J Hu, AF Rigosi, M Kruskopf, Y Yang, BY Wu, J Tian, AR Panna, HY Lee, ...
Scientific reports 8 (1), 15018, 2018
442018
Confocal laser scanning microscopy for rapid optical characterization of graphene
V Panchal, Y Yang, G Cheng, J Hu, M Kruskopf, CI Liu, AF Rigosi, ...
Communications physics 1 (1), 83, 2018
432018
Quantum transport in graphene junctions with moiré superlattice modulation
J Hu, AF Rigosi, JU Lee, HY Lee, Y Yang, CI Liu, RE Elmquist, DB Newell
Physical Review B 98 (4), 045412, 2018
412018
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