Quazi  D. M. Khosru
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-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability
A Nakajima, QDM Khosru, T Yoshimoto, T Kidera, S Yokoyama
Applied Physics Letters 80 (7), 1252-1254, 2002
1232002
Soft breakdown free atomic-layer-deposited silicon-nitride/SiO/sub 2/stack gate dielectrics
A Nakajima, QDM Khosru, T Yoshirnoto, T Kidera, S Yokoyama
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
372001
Degradation of inversion layer electron mobility due to interface traps in metal‐oxide‐semiconductor transistors
T Matsuoka, S Taguchi, QDM Khosru, K Taniguchi, C Hamaguchi
Journal of applied physics 78 (5), 3252-3257, 1995
351995
Spatial distribution of trapped holes in SiO2
QDM Khosru, N Yasuda, K Taniguchi, C Hamaguchi
Journal of applied physics 76 (8), 4738-4742, 1994
291994
Atomic-layer-deposited silicon-nitride/SiO2 stack––a highly potential gate dielectrics for advanced CMOS technology
A Nakajima, QDM Khosru, T Yoshimoto, S Yokoyama
Microelectronics Reliability 42 (12), 1823-1835, 2002
272002
Generation and relaxation phenomena of positive charge and interface trap in a metal‐oxide‐semiconductor structure
QDM Khosru, N Yasuda, K Taniguchi, C Hamaguchi
Journal of applied physics 77 (9), 4494-4503, 1995
271995
Soft Breakdown Free Atomic-Layer-Deposited Silicon-Nitride/SiO~ 2 Stack Gate Dielectrics
A Nakajima, QDM Khosru, T Yoshimoto, T Kidera, S Yokoyama
INTERNATIONAL ELECTRON DEVICES MEETING 1 (1), 133-136, 1998
261998
Effect of biomolecule position and fill in factor on sensitivity of a dielectric modulated double gate junctionless MOSFET biosensor
E Rahman, A Shadman, QDM Khosru
Sensing and Bio-Sensing Research 13, 49-54, 2017
232017
Parametrization of a silicon nanowire effective mass model from sp3d5s* orbital basis calculations
RN Sajjad, K Alam, QDM Khosru
Semiconductor science and technology 24 (4), 045023, 2009
212009
Oxide thickness dependence of interface trap generation in a metal‐oxide‐semiconductor structure during substrate hot‐hole injection
QDM Khosru, N Yasuda, K Taniguchi, C Hamaguchi
Applied physics letters 63 (18), 2537-2539, 1993
201993
Monolayer MoS2 and WSe2 double gate field effect transistor as super nernst pH sensor and nanobiosensor
A Shadman, E Rahman, QDM Khosru
Sensing and Bio-Sensing Research 11, 45-51, 2016
192016
Structural, dielectric and magnetic properties of Ta-substituted Bi0. 8La0. 2FeO3 multiferroics
T Fakhrul, R Mahbub, N Chowdhury, QDM Khosru, A Sharif
Journal of Alloys and Compounds 622, 471-476, 2015
182015
High electron mobility transistors: performance analysis, research trend and applications
MNA Aadit, SG Kirtania, F Afrin, MK Alam, QDM Khosru
Different Types of Field-Effect Transistors-Theory and Applications, 45-64, 2017
172017
Impact of high‐κ gate dielectric and other physical parameters on the electrostatics and threshold voltage of long channel gate‐all‐around nanowire transistor
SUZ Khan, MS Hossain, FU Rahman, R Zaman, MO Hossen, ...
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2015
172015
Negative capacitance tunnel field effect transistor: A novel device with low subthreshold swing and high on current
N Chowdhury, SMF Azad, QDM Khosru
ECS Transactions 58 (16), 1, 2014
172014
Linear pocket profile based threshold voltage model for sub-100 nm n-MOSFET
MH Bhuyan, QDM Khosru
International Journal of Electrical and Computer Engineering 5 (5), 310-315, 2010
172010
Trilayer TMDC heterostructures for MOSFETs and nanobiosensors
K Datta, A Shadman, E Rahman, QDM Khosru
Journal of Electronic Materials 46 (2), 1248-1260, 2017
132017
Low-temperature formation of highly reliable silicon-nitride gate dielectrics with suppressed soft-breakdown phenomena for advanced complementary metal–oxide–semiconductor …
A Nakajima, QDM Khosru, T Yoshimoto, T Kidera, S Yokoyama
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002
132002
Spatial distribution of trapped holes in the oxide of metal oxide semiconductor field-effect transistors after uniform hot-hole injection
QDM Khosru, N Yasuda, A Maruyama, K Taniguchi, C Hamaguchi
Japanese journal of applied physics 30 (12S), 3652, 1991
131991
Inversion layer effective mobility model for pocket implanted nano scale n-MOSFET
MH Bhuyan, QDM Khosru
International Journal of Electrical and Electronics Engineering 5 (1), 50-57, 2011
122011
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