Wei Zhang
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Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells
FF Sudradjat, W Zhang, J Woodward, H Durmaz, TD Moustakas, R Paiella
Applied Physics Letters 100 (24), 241113, 2012
672012
Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations
E Francesco Pecora, W Zhang, A Yu. Nikiforov, L Zhou, DJ Smith, J Yin, ...
Applied Physics Letters 100 (6), 061111, 2012
602012
Sub-250 nm light emission and optical gain in AlGaN materials
E Francesco Pecora, W Zhang, AY Nikiforov, J Yin, R Paiella, L Dal Negro, ...
Journal of Applied Physics 113 (1), 013106, 2013
362013
Molecular beam epitaxy growth of AlGaN quantum wells on 6H-SiC substrates with high internal quantum efficiency
W Zhang, AY Nikiforov, C Thomidis, J Woodward, H Sun, CK Kao, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2012
322012
Sequential tunneling transport characteristics of GaN/AlGaN coupled-quantum-well structures
F Sudradjat, W Zhang, K Driscoll, Y Liao, A Bhattacharyya, C Thomidis, ...
Journal of Applied Physics 108 (10), 103704, 2010
322010
Polarization properties of deep-ultraviolet optical gain in Al-rich AlGaN structures
EF Pecora, W Zhang, J Yin, R Paiella, L Dal Negro, TD Moustakas
Applied Physics Express 5 (3), 032103, 2012
212012
Milliwatt power AlGaN‐based deep ultraviolet light emitting diodes by plasma‐assisted molecular beam epitaxy
Y Liao, C Thomidis, C Kao, A Moldawer, W Zhang, Y Chang, AY Nikiforov, ...
physica status solidi (RRL)–Rapid Research Letters 4 (1‐2), 49-51, 2010
122010
Sequential tunneling transport in GaN/AlGaN quantum cascade structures
FF Sudradjat, W Zhang, K Driscoll, Y Liao, A Bhattacharyya, C Thomidis, ...
physica status solidi c 9 (3‐4), 588-591, 2012
52012
Ultraviolet light emitting device doped with boron
Y Liao, DA Collins, W Zhang
US Patent 9,876,143, 2018
32018
UV-LED liquid monitoring and treatment apparatus and method
Y Liao, RC Walker, D Collins, W Zhang
US Patent 10,669,166, 2020
22020
Development of aluminum gallium nitride based optoelectronic devices operating in deep UV and terahertz spectrum ranges
W Zhang
Boston University, 2014
12014
Ultraviolet light emitting device doped with boron
Y Liao, DA Collins, W Zhang
US Patent 10,326,054, 2019
2019
III-nitride terahertz photodetectors for the Reststrahlen gap of intersubband optoelectronics
R Paiella, H Durmaz, FF Sudradjat, D Nothern, GC Brummer, W Zhang, ...
Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and …, 2017
2017
Sub-250nm room temperature optical gain from AlGaN materials with strong compositional fluctuations
E Pecora, W Zhang, H Sun, A Nikiforov, J Yin, R Paiella, T Moustakas, ...
APS March Meeting Abstracts 2013, V1. 109, 2013
2013
Evidence of deep ultraviolet amplified spontaneous emission in electron beam pumped AlGaN multiple-quantum-well-based structures
AY Nikiforov, W Zhang, J Woodward, J Yin, R Paiella, KF Ludwig, ...
2012 Lester Eastman Conference on High Performance Devices (LEC), 1-4, 2012
2012
Sub-250nm room temperature optical gain from AlGaN/AlN multiple quantum wells structures
EF Pecora, W Zhang, L Zhou, DJ Smith, J Yin, R Paiella, L Dal Negro, ...
CLEO: Science and Innovations, CTh3D. 5, 2012
2012
Room temperature low threshold stimulated emission of electron beam-pumped AlGaN-based deep UV laser structures emitting below 250 nm
A Nikiforov, W Zhang, J Woodward, J Yin, E Pecora, L Zhou, L Dal Negro, ...
APS March Meeting Abstracts 2012, L28. 008, 2012
2012
Growth and characterization of deep ultraviolet emitting AlGaN structures on SiC substrates
W Zhang, AY Nikiforov, C Thomidis, A Moldawer, H Sun, WF Hug, ...
Quantum Electronics and Laser Science Conference, JTuD3, 2011
2011
Proc. ECS Trans. Proc. ECS Trans. 35 (6), 63, 2011
EF Pecora, W Zhang, J Yin, R PAIELLA, L DAL NEGRO, TD MOUSTAKAS
Proc. ECS Trans 35 (6), 63, 2011
2011
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