Hock M. Ng
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Scattering of electrons at threading dislocations in GaN
NG Weimann, LF Eastman, D Doppalapudi, HM Ng, TD Moustakas
Journal of applied physics 83, 3656, 1998
7701998
The role of dislocation scattering in n-type GaN films
HM Ng, D Doppalapudi, TD Moustakas, NG Weimann, LF Eastman
Applied physics letters 73 (6), 821-823, 1998
4971998
Molecular-beam epitaxy of GaN/AlGaN multiple quantum wells on R-plane (1012) sapphire substrates
HM Ng
Applied physics letters 80, 4369, 2002
3542002
Intersubband absorption at λ∼ 1.55 μm in well-and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers
C Gmachl, HM Ng, SNG Chu, AY Cho
Applied Physics Letters 77, 3722, 2000
3482000
High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy
HM Ng, TD Moustakas, SNG Chu
Applied Physics Letters 76, 2818, 2000
1992000
Ga-doped ZnO single-crystal nanotips grown on fused silica by metalorganic chemical vapor deposition
J Zhong, S Muthukumar, Y Chen, Y Lu, HM Ng, W Jiang, EL Garfunkel
Applied physics letters 83, 3401, 2003
1952003
GaN nanotip pyramids formed by anisotropic etching
HM Ng, NG Weimann, A Chowdhury
Journal of applied physics 94 (1), 650-653, 2003
1952003
Second-harmonic generation in periodically poled GaN
A Chowdhury, HM Ng, M Bhardwaj, NG Weimann
Applied physics letters 83, 1077, 2003
1722003
Comparative study of ultrafast intersubband electron scattering times at∼ 1.55 μm wavelength in GaN/AlGaN heterostructures
JD Heber, C Gmachl, HM Ng, AY Cho
Applied physics letters 81, 1237, 2002
1672002
Intersubband absorption in GaN/AlGaN multiple quantum wells in the wavelength range of λ∼ 1.75–4.2 μm
C Gmachl, HM Ng, AY Cho
Applied Physics Letters 77, 334, 2000
1632000
Intersubband absorption in degenerately doped GaN/AlGaN coupled double quantum wells
C Gmachl, HM Ng, AY Cho
Applied Physics Letters 79, 1590, 2001
1622001
Distributed Bragg reflectors based on AlN/GaN multilayers
HM Ng, D Doppalapudi, E Iliopoulos, TD Moustakas
Applied physics letters 74, 1036, 1999
1111999
Broadening of near-band-gap photoluminescence in n-GaN films
E Iliopoulos, D Doppalapudi, HM Ng, TD Moustakas
Applied physics letters 73, 375, 1998
1081998
Sub-picosecond electron scattering time for λ= 1.55 μm intersubband transitions in GaN/AlGaN multiple quantum wells
C Gmachl, SV Frolov, HM Ng, SNG Chu, AY Cho
Electronics Letters 37 (6), 378-380, 2001
982001
OPTOELECTRONICS-Sub-picosecond electron scattering time for l= 1.55 mm intersubband transitions in GaN/AlGaN multiple quantum wells
C Gmachl, SV Frolov, HM Ng, SNG Chu, AY Cho
Electronics Letters 37 (6), 378-379, 2001
98*2001
Light-emitting crystal structures
HM Ng
US Patent 7,952,109, 2011
962011
Light-emitting crystal structures
HM Ng
US Patent 7,952,109, 2011
962011
Light-emitting crystal structures
HM Ng
US Patent 7,952,109, 2011
962011
Multimedia Telecommunication Apparatus With Motion Tracking
HM Ng, EL Sutter
US Patent App. 13/029,326, 2012
892012
Properties of Ga2O3/Gd2O3/GaN metal–insulator–semiconductor diodes
M Hong, KA Anselm, J Kwo, HM Ng, JN Baillargeon, AR Kortan, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
762000
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