Temperature-dependent photoluminescence of Ge/Si and Ge1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content MY Ryu, TR Harris, YK Yeo, RT Beeler, J Kouvetakis
Applied Physics Letters 102 (17), 2013
82 2013 Luminescence mechanisms in quaternary MY Ryu, CQ Chen, E Kuokstis, JW Yang, G Simin, MA Khan
Applied physics letters 80 (20), 3730-3732, 2002
65 2002 Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si (100) R Roucka, R Beeler, J Mathews, MY Ryu, Y Kee Yeo, J Menéndez, ...
Journal of Applied Physics 109 (10), 2011
56 2011 Radiation-induced electron traps in Al0. 14Ga0. 86N by 1 MeV electron radiation MR Hogsed, YK Yeo, M Ahoujja, MY Ryu, JC Petrosky, RL Hengehold
Applied Physics Letters 86 (26), 2005
37 2005 Optical properties of undoped, Be-doped, and Si-doped wurtzite-rich GaAs nanowires grown on Si substrates by molecular beam epitaxy SG Ihn, MY Ryu, JI Song
Solid state communications 150 (15-16), 729-733, 2010
35 2010 Electronic structure of nonionic surfactant-modified PEDOT: PSS and its application in perovskite solar cells with reduced interface recombination D Shin, D Kang, JB Lee, JH Ahn, IW Cho, MY Ryu, SW Cho, NE Jung, ...
ACS applied materials & interfaces 11 (18), 17028-17034, 2019
32 2019 Observation of heavy-and light-hole split direct bandgap photoluminescence from tensile-strained GeSn (0.03% Sn) TR Harris, YK Yeo, MY Ryu, RT Beeler, J Kouvetakis
Journal of Applied Physics 116 (10), 2014
29 2014 Influences of Si-doped graded short-period superlattice on green InGaN/GaN light-emitting diodes K Lee, CR Lee, JH Lee, TH Chung, MY Ryu, KU Jeong, JY Leem, JS Kim
Optics Express 24 (7), 7743-7751, 2016
28 2016 Direct bandgap cross-over point of Ge1-ySny grown on Si estimated through temperature-dependent photoluminescence studies TR Harris, MY Ryu, YK Yeo, B Wang, CL Senaratne, J Kouvetakis
Journal of Applied Physics 120 (8), 2016
27 2016 Electrical and optical activation studies of Si-implanted GaN JA Fellows, YK Yeo, MY Ryu, RL Hengehold
Journal of electronic materials 34, 1157-1164, 2005
27 2005 Pulsed metalorganic chemical vapor deposition of quaternary AlInGaN layers and multiple quantum wells for ultraviolet light emission C Chen, J Yang, MY Ryu, J Zhang, E Kuokstis, G Simin, MA Khan
Japanese journal of applied physics 41 (4R), 1924, 2002
27 2002 Highly efficient and flexible photosensors with GaN nanowires horizontally embedded in a graphene sandwich channel S Han, SK Lee, I Choi, J Song, CR Lee, K Kim, MY Ryu, KU Jeong, ...
ACS applied materials & interfaces 10 (44), 38173-38182, 2018
24 2018 Effects of Si-doping in the barriers on the recombination dynamics in MY Ryu, PW Yu, E Shin, JI Lee, SK Yu, E Oh, OH Nam, CS Sone, YJ Park
Journal of Applied Physics 89 (1), 634-637, 2001
22 2001 Stranski–Krastanov InAs/GaAsSb quantum dots coupled with sub-monolayer quantum dot stacks as a promising absorber for intermediate band solar cells Y Kim, IW Cho, MY Ryu, JO Kim, SJ Lee, KY Ban, CB Honsberg
Applied Physics Letters 111 (7), 2017
21 2017 Time-resolved photoluminescence of quaternary AlInGaN-based multiple quantum wells MY Ryu, CQ Chen, E Kuokstis, JW Yang, G Simin, MA Khan, GG Sim, ...
Applied physics letters 80 (21), 3943-3945, 2002
21 2002 Effect of energy transfer on the optical properties of surface-passivated perovskite films with CdSe/ZnS quantum dots IW Cho, MY Ryu
Scientific Reports 9 (1), 18433, 2019
19 2019 Silicon doping effect on the optical properties of In0. 15Ga0. 85N/In0. 015Ga0. 985N quantum wells MY Ryu, YJ Yu, PW Yu, JI Lee, SK Yu, ES Oh, OH Nam, CS Sone, YJ Park, ...
Solid state communications 116 (12), 675-678, 2000
19 2000 Temperature-dependent resonance energy transfer from semiconductor quantum wells to graphene YJ Yu, KS Kim, J Nam, SR Kwon, H Byun, K Lee, JH Ryou, RD Dupuis, ...
Nano Letters 15 (2), 896-902, 2015
18 2015 Effects of a thin InGaAs layer on carrier dynamics of InAs quantum dots HJ Lee, MY Ryu, JS Kim
Journal of Applied Physics 108 (9), 2010
18 2010 Optical investigation of InGaN/GaN quantum well structures with various barrier widths YJ Yu, MY Ryu, PW Yu, DJ Kim, SJ Park
Journal of the Korean Physical Society 38 (2), 134, 2001
18 2001 