Farid Medjdoub
Farid Medjdoub
IEMN - CNRS
E-mail confirmado em iemn.fr
Título
Citado por
Citado por
Ano
Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices?
F Medjdoub, JF Carlin, M Gonschorek, E Feltin, MA Py, D Ducatteau, ...
2006 International Electron Devices Meeting, 1-4, 2006
1922006
Barrier-layer scaling of InAlN/GaN HEMTs
F Medjdoub, M Alomari, JF Carlin, M Gonschorek, E Feltin, MA Py, ...
IEEE Electron device letters 29 (5), 422-425, 2008
1392008
Low on-resistance high-breakdown normally off AlN/GaN/AlGaN DHFET on Si substrate
F Medjdoub, J Derluyn, K Cheng, M Leys, S Degroote, D Marcon, D Visalli, ...
IEEE electron device letters 31 (2), 111-113, 2010
1292010
Status of the emerging InAlN/GaN power HEMT technology
F Medjdoub, JF Carlin, C Gaquiere, N Grandjean, E Kohn
The Open Electrical & Electronic Engineering Journal 2 (1), 2008
972008
A comprehensive reliability investigation of the voltage-, temperature-and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs
D Marcon, T Kauerauf, F Medjdoub, J Das, M Van Hove, P Srivastava, ...
2010 International Electron Devices Meeting, 20.3. 1-20.3. 4, 2010
962010
Characteristics of Al/sub 2/O/sub 3//AllnN/GaN MOSHEMT
F Medjdoub, N Sarazin, M Tordjman, M Magis, MA di Forte-Poisson, ...
Electronics letters 43 (12), 691-692, 2007
772007
High-performance low-leakage-current AlN/GaN HEMTs grown on silicon substrate
F Medjdoub, M Zegaoui, D Ducatteau, N Rolland, PA Rolland
IEEE Electron Device Letters 32 (7), 874-876, 2011
752011
InAlN/GaN MOSHEMT with self-aligned thermally generated oxide recess
M Alomari, F Medjdoub, JF Carlin, E Feltin, N Grandjean, A Chuvilin, ...
IEEE Electron Device Letters 30 (11), 1131-1133, 2009
742009
First demonstration of high-power GaN-on-silicon transistors at 40 GHz
F Medjdoub, M Zegaoui, B Grimbert, D Ducatteau, N Rolland, PA Rolland
IEEE Electron Device Letters 33 (8), 1168-1170, 2012
692012
1900 V, 1.6 mΩ cm2 AlN/GaN-on-Si power devices realized by local substrate removal
N Herbecq, I Roch-Jeune, N Rolland, D Visalli, J Derluyn, S Degroote, ...
Applied Physics Express 7 (3), 034103, 2014
682014
Enhancement mode semiconductor device
J Derluyn, F Medjdoub, M Germain
US Patent 8,309,987, 2012
662012
Gallium nitride (GaN): physics, devices, and technology
F Medjdoub
CRC Press, 2017
642017
Effects of AlGaN back barrier on AlN/GaN-on-silicon high-electron-mobility transistors
F Medjdoub, M Zegaoui, B Grimbert, N Rolland, PA Rolland
Applied Physics Express 4 (12), 124101, 2011
622011
Small-signal characteristics of AlInN/GaN HEMTs
F Medjdoub, JF Carlin, M Gonschorek, MA Py, N Grandjean, ...
Electronics Letters 42 (13), 779-780, 2006
572006
Low leakage high breakdown e-mode GaN DHFET on Si by selective removal of in-situ grown Si3N4
J Derluyn, M Van Hove, D Visalli, A Lorenz, D Marcon, P Srivastava, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
502009
Record combination of power-gain cut-off frequency and three-terminal breakdown voltage for GaN-on-silicon devices
F Medjdoub, B Grimbert, D Ducatteau, N Rolland
Applied Physics Express 6 (4), 044001, 2013
402013
Above 600 mS/mm transconductance with 2.3 A/mm drain current density AlN/GaN high-electron-mobility transistors grown on silicon
F Medjdoub, M Zegaoui, N Waldhoff, B Grimbert, N Rolland, PA Rolland
Applied physics express 4 (6), 064106, 2011
392011
Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate
F Medjdoub, M Zegaoui, N Rolland, PA Rolland
Applied Physics Letters 98 (22), 223502, 2011
392011
Low-noise microwave performance of AlN/GaN HEMTs grown on silicon substrate
F Medjdoub, N Waldhoff, M Zegaoui, B Grimbert, N Rolland, PA Rolland
IEEE electron device letters 32 (9), 1230-1232, 2011
362011
Effect of fluoride plasma treatment on InAlN/GaN HEMTs
F Medjdoub, M Alomari, JF Carlin, M Gonschorek, E Feltin, MA Py, ...
Electronics Letters 44 (11), 696-698, 2008
352008
O sistema não pode executar a operação agora. Tente novamente mais tarde.
Artigos 1–20