| Advanced test methods for SRAMs: effective solutions for dynamic fault detection in nanoscaled technologies A Bosio, L Dilillo, P Girard, S Pravossoudovitch, A Virazel Springer Science & Business Media, 2009 | 97* | 2009 |
| Dynamic read destructive fault in embedded-SRAMs: analysis and march test solution L Dilillo, P Girard, S Pravossoudovitch, A Virazel, S Borri, M Hage-Hassan Proceedings. Ninth IEEE European Test Symposium, 2004. ETS 2004., 140-145, 2004 | 89 | 2004 |
| A study of tapered 3-D TSVs for power and thermal integrity A Todri, S Kundu, P Girard, A Bosio, L Dilillo, A Virazel IEEE Transactions on Very Large Scale Integration (VLSI) Systems 21 (2), 306-319, 2012 | 88 | 2012 |
| Resistive-open defects in embedded-SRAM core cells: analysis and march test solution L Dilillo, P Girard, S Pravossoudovitch, A Virazel, S Borri, M Hage-Hassan 13th Asian test symposium, 266-271, 2004 | 83 | 2004 |
| Multiple cell upset classification in commercial SRAMs G Tsiligiannis, L Dilillo, A Bosio, P Girard, S Pravossoudovitch, A Todri, ... IEEE Transactions on Nuclear Science 61 (4), 1747-1754, 2014 | 68 | 2014 |
| Determining realistic parameters for the double exponential law that models transient current pulses F Wrobel, L Dilillo, AD Touboul, V Pouget, F Saigné IEEE Transactions on Nuclear Science 61 (4), 1813-1818, 2014 | 58 | 2014 |
| Neutron-induced failure in silicon IGBTs, silicon super-junction and SiC MOSFETs A Griffoni, J van Duivenbode, D Linten, E Simoen, P Rech, L Dilillo, ... IEEE Transactions on Nuclear Science 59 (4), 866-871, 2012 | 53 | 2012 |
| Testing a commercial MRAM under neutron and alpha radiation in dynamic mode G Tsiligiannis, L Dilillo, A Bosio, P Girard, A Todri, A Virazel, SS McClure, ... IEEE Transactions on Nuclear Science 60 (4), 2617-2622, 2013 | 49 | 2013 |
| Analysis of dynamic faults in embedded-SRAMs: Implications for memory test S Borri, M Hage-Hassan, L Dilillo, P Girard, S Pravossoudovitch, A Virazel Journal of Electronic Testing 21, 169-179, 2005 | 46 | 2005 |
| Data retention fault in SRAM memories: Analysis and detection procedures L Dilillo, P Girard, S Pravossoudovitch, A Virazel, MB Hage-Hassan 23rd IEEE VLSI Test Symposium (VTS'05), 183-188, 2005 | 45 | 2005 |
| Efficient march test procedure for dynamic read destructive fault detection in SRAM memories L Dilillo, P Girard, S Pravossoudovitch, A Virazel, S Borri, M Hage-Hassan Journal of Electronic Testing 21 (5), 551-561, 2005 | 42 | 2005 |
| A low-cost fault-tolerant RISC-V processor for space systems DA Santos, LM Luza, CA Zeferino, L Dilillo, DR Melo 2020 15th Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 1-5, 2020 | 38 | 2020 |
| Dynamic test methods for COTS SRAMs G Tsiligiannis, L Dilillo, V Gupta, A Bosio, P Girard, A Virazel, H Puchner, ... IEEE Transactions on Nuclear Science 61 (6), 3095-3102, 2014 | 38 | 2014 |
| Resistive-open defect injection in SRAM core-cell: analysis and comparison between 0.13 μm and 90 nm technologies L Dilillo, P Girard, S Pravossoudovitch, A Virazel, M Bastian Proceedings of the 42nd annual Design Automation Conference, 857-862, 2005 | 35 | 2005 |
| A functional power evaluation flow for defining test power limits during at-speed delay testing M Valka, A Bosio, L Dilillo, P Girard, S Pravossoudovitch, A Virazel, ... 2011 Sixteenth IEEE European Test Symposium, 153-158, 2011 | 33 | 2011 |
| March iC-: an improved version of March C-for ADOFs detection L Dilillo, P Girard, S Pravossoudovitch, A Virazel, S Borri 22nd IEEE VLSI Test Symposium, 2004. Proceedings., 129-134, 2004 | 33 | 2004 |
| Comparison of open and resistive-open defect test conditions in SRAM address decoders Dilillo, Girard, Pravossoudovitch, Virazel, Borri 2003 Test Symposium, 250-255, 2003 | 31 | 2003 |
| Exploring the impact of functional test programs re-used for power-aware testing A Touati, A Bosio, L Dilillo, P Girard, A Virazel, P Bernardi, MS Reorda 2015 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2015 | 29 | 2015 |
| Analysis of resistive-bridging defects in SRAM core-cells: A comparative study from 90nm down to 40nm technology nodes RA Fonseca, L Dilillo, A Bosio, P Girard, S Pravossoudovitch, A Virazel, ... 2010 15th IEEE European Test Symposium, 132-137, 2010 | 29 | 2010 |
| Resistive-open defect influence in SRAM pre-charge circuits: analysis and characterization L Dilillo, P Girard, S Pravossoudovitch, A Virazel, MB Hage-Hassan European Test Symposium (ETS'05), 116-121, 2005 | 28 | 2005 |
Patrick GirardLIRMME-mail confirmado em lirmm.fr
