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anand jesudas
anand jesudas
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Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon
G Ye, H Wang, S Arulkumaran, GI Ng, R Hofstetter, Y Li, MJ Anand, ...
Applied Physics Letters 103 (14), 142109, 2013
792013
Low-contact-resistance non-gold Ta/Si/Ti/Al/Ni/Ta Ohmic contacts on undoped AlGaN/GaN high-electron-mobility transistors grown on silicon
Y Li, GI Ng, S Arulkumaran, CMM Kumar, KS Ang, MJ Anand, H Wang, ...
Applied Physics Express 6 (11), 116501, 2013
332013
Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack
MJ Anand, GI Ng, S Vicknesh, S Arulkumaran, K Ranjan
physica status solidi (c) 10 (11), 1421-1425, 2013
242013
Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)
MJ Anand, GI Ng, S Arulkumaran, CM Manoj Kumar, K Ranjan, ...
Applied Physics Letters 106 (8), 083508, 2015
232015
Distribution of trap energy level in AlGaN/GaN high-electron-mobility transistors on Si under ON-state stress
MJ Anand, GI Ng, S Arulkumaran, B Syamal, X Zhou
Applied Physics Express 8 (10), 104101, 2015
182015
Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors
Y Li, GI Ng, S Arulkumaran, G Ye, CMM Kumar, MJ Anand, ZH Liu
Applied Physics Express 8 (4), 041001, 2015
122015
Low k-dielectric benzocyclobutane encapsulated AlGaN/GaN HEMTs with Improved off-state breakdown voltage
MJ Anand, GI Ng, S Arulkumaran, K Ranjan, S Vicknesh, KS Ang
Japanese Journal of Applied Physics 54 (3), 036504, 2015
102015
GaN HEMT compact model for circuit simulation
B Syamal, SB Chiah, X Zhou, A Ajaykumar, MJ Anand, GI Ng, ...
2015 IEEE International Conference on Electron Devices and Solid-State …, 2015
72015
Low specific ON-resistance and high figure-of-merit AlGaN/GaN HEMTs on Si substrate with non-gold metal stacks
MJ Anand, GI Ng, S Arulkumaran, H Wang, Y Li, S Vicknesh, T Egawa
71st Device Research Conference, 1-2, 2013
62013
Uniformity studies of AlGaN/GaN HEMTs on 200-mm diameter Si (111) substrate
S Arulkumaran, GI Ng, S Vicknesh, CM Manojkumar, MJ Anand, H Wang, ...
Proc. CS MANTECH, 289-292, 2013
42013
AlGaN/GaN MISHEMTs on silicon using atomic layer deposited ZrO2 as gate dielectrics
G Ye, H Wang, S Arulkumaran, GI Ng, R Hofstetter, Y Li, MJ Anand, ...
71st Device Research Conference, 71-72, 2013
12013
Uniformity Studies of AlGaN/GaN HEMTs on 8-in Diameter Si (111) Substrate
S Arulkumaran, GI Ng, S Vicknesh, CM Manojkumar, KS Ang, H Wang, ...
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