| Artificial synapses based on ferroelectric Schottky barrier field-effect transistors for neuromorphic applications F Xi, Y Han, M Liu, JH Bae, A Tiedemann, D Grützmacher, QT Zhao ACS applied materials & interfaces 13 (27), 32005-32012, 2021 | 47 | 2021 |
| Structural properties of GeSn thin films grown by molecular beam epitaxy ZP Zhang, YX Song, ZYS Zhu, Y Han, QM Chen, YY Li, LY Zhang, ... AIP Advances 7 (4), 2017 | 17 | 2017 |
| Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy ZP Zhang, YX Song, YY Li, XY Wu, ZYS Zhu, Y Han, LY Zhang, H Huang, ... AIP Advances 7 (10), 2017 | 16 | 2017 |
| Steep switching Si nanowire p-FETs with dopant segregated silicide source/drain at cryogenic temperature Y Han, J Sun, B Richstein, F Allibert, I Radu, JH Bae, D Grützmacher, ... IEEE Electron Device Letters 43 (8), 1187-1190, 2022 | 12 | 2022 |
| Vertical GeSn nanowire MOSFETs for CMOS beyond silicon M Liu, Y Junk, Y Han, D Yang, JH Bae, M Frauenrath, JM Hartmann, ... Communications Engineering 2 (1), 7, 2023 | 11 | 2023 |
| Interface engineering for steep slope cryogenic MOSFETs B Richstein, Y Han, Q Zhao, L Hellmich, J Klos, S Scholz, LR Schreiber, ... IEEE Electron Device Letters 43 (12), 2149-2152, 2022 | 10 | 2022 |
| Vapor-solid-solid grown Ge nanowires at integrated circuit compatible temperature by molecular beam epitaxy Z Zhu, Y Song, Z Zhang, H Sun, Y Han, Y Li, L Zhang, Z Xue, Z Di, ... Journal of Applied Physics 122 (9), 2017 | 10 | 2017 |
| Characterization of fully silicided source/drain SOI UTBB nMOSFETs at cryogenic temperatures Y Han, F Xi, F Allibert, I Radu, S Prucnal, JH Bae, S Hoffmann-Eifert, ... Solid-State Electronics 192, 108263, 2022 | 8 | 2022 |
| Cryogenic characteristics of UTBB SOI Schottky-barrier MOSFETs Y Han, J Sun, F Xi, JH Bae, D Grützmacher, QT Zhao Solid-State Electronics 194, 108351, 2022 | 6 | 2022 |
| Abnormal strain in suspended GeSn microstructures Y Han, Y Song, X Chen, Z Zhang, J Liu, Y Li, Z Zhu, H Huang, J Shao, ... Materials Research Express 5 (3), 035901, 2018 | 6 | 2018 |
| Heterosynaptic Plasticity and Neuromorphic Boolean Logic Enabled by Ferroelectric Polarization Modulated Schottky Diodes F Xi, A Grenmyr, J Zhang, Y Han, JH Bae, D Grützmacher, QT Zhao Advanced Electronic Materials 9 (3), 2201155, 2023 | 5 | 2023 |
| A comparative study of selective dry and wet etching of germanium–tin (Ge1− xSnx) on germanium Y Han, Y Li, Y Song, C Chi, Z Zhang, J Liu, Z Zhu, S Wang Semiconductor Science and Technology 33 (8), 085011, 2018 | 5 | 2018 |
| Compact modeling of Schottky barrier field-effect transistors at deep cryogenic temperatures C Roemer, N Dersch, G Darbandy, M Schwarz, Y Han, QT Zhao, ... Solid-State Electronics 207, 108686, 2023 | 4 | 2023 |
| Toward Low‐Power Cryogenic Metal‐Oxide Semiconductor Field‐Effect Transistors J Knoch, B Richstein, Y Han, M Frentzen, L Rainer Schreiber, J Klos, ... physica status solidi (a) 220 (13), 2300069, 2023 | 4 | 2023 |
| GeSn/Ge dual-nanowire heterostructure Z Zhu, Y Song, Y Han, Y Li, Z Zhang, L Zhang, S Wang 2017 IEEE Photonics Society Summer Topical Meeting Series (SUM), 71-72, 2017 | 4 | 2017 |
| Four-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses for Neuromorphic Applications F Xi, Y Han, A Grenmyr, D Grützmacher, QT Zhao IEEE Journal of the Electron Devices Society 10, 569-574, 2022 | 3 | 2022 |
| 4-terminal ferroelectric Schottky barrier field effect transistors as artificial synapses F Xi, Y Han, A Tiedemann, D Grützmacher, QT Zhao ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference …, 2021 | 3 | 2021 |
| Impact of the backgate on the Performance of SOI UTBB nMOSFETs at cryogenic temperatures Y Han, F Xi, F Allibert, I Radu, S Prucnal, JH Bae, S Hoffmann-Eifert, ... 2021 Joint International EUROSOI Workshop and International Conference on …, 2021 | 3 | 2021 |
| Improved performance of FDSOI FETs at cryogenic temperatures by optimizing ion implantation into silicide Y Han, J Sun, I Radu, J Knoch, D Grützmacher, QT Zhao Solid-State Electronics 208, 108733, 2023 | 2 | 2023 |
| High Performance 5 nm Si Nanowire FETs with a Record Small SS= 2.3 mV/dec and High Transconductance at 5.5 K Enabled by Dopant Segregated Silicide Source/Drain Y Han, J Sun, JH Bae, D Grützmacher, J Knoch, QT Zhao 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 2 | 2023 |
Detlev GruetzmacherDirector at the Peter Grünberg Institute, Forschungszentrum JülichE-mail confirmado em fz-juelich.de
